TP 3410 Search Results

pg 7 HEYCO

Abstract: M32 x 1.0 dimensions
Contextual Info: “Stay Connected with Heyco” Hole Plugs Heyco PG Threaded Plugs For PG Thread Specifications, See Page 3-37 THREAD TYPE/SIZE PART NO. DESCRIPTION PART DIMENSIONS A B Head Diameter Overall Height in. mm. in. mm. Gray PG 7 PG 9 3405 3407 TP PG 7 TP PG 9

T-13224G

Abstract: 850C
Contextual Info: U Interface Transformer 2B1Q Coding Applications Designed for use with National TP 3410 Turns Ratio ( + 3 % ) (Line : Chip) 1.50 : 1 REINFORCED INSULATION PARAMETER MIN. MAX. UNITS Primary Inductance (Line Side) 25.4 28.6 mH Primary DC Resistance 20 ohms

13224

Abstract: T-13224 850C
Contextual Info: U Interface Transformer 2B1Q Coding Applications Designed for use with National TP 3410 Turns Ratio ( + 3 % ) (Line : Chip) 1.50 : 1 PARAMETER MIN. MAX. UNITS Primary Inductance (Line Side) 25.4 28.6 mH REINFORCED INSULATION Primary DC Resistance 20 ohms

T-13220G

Abstract: 850C
Contextual Info: U Interface Transformer 2B1Q Coding Applications Designed for use with National TP 3410 Turns Ratio ( + 3 % ) (Line : Chip) 1.50 : 1 REINFORCED INSULATION PARAMETER MIN. MAX. UNITS Primary Inductance (Line Side) 25.4 28.6 mH Primary DC Resistance 20 ohms

T-13211

Abstract: 13211 TP 3410 850C T13-211
Contextual Info: U Interface Transformer 2B1Q Coding Applications Designed for use with National TP 3410 Turns Ratio ( + 3 % ) (Line : Chip) 1.50 : 1 PARAMETER MIN. MAX. UNITS Primary Inductance (Line Side) 25.4 28.6 mH Primary DC Resistance 20 ohms Secondary DC Resistance

T-13220

Abstract: 13220 850C
Contextual Info: U Interface Transformer 2B1Q Coding Applications Designed for use with National TP 3410 Turns Ratio ( + 3 % ) (Line : Chip) 1.50 : 1 PARAMETER MIN. MAX. UNITS Primary Inductance (Line Side) 25.4 28.6 mH Primary DC Resistance 20 ohms Secondary DC Resistance

T-13211G

Abstract: TP 3410 850C
Contextual Info: U Interface Transformer 2B1Q Coding Applications Designed for use with National TP 3410 Turns Ratio ( + 3 % ) (Line : Chip) 1.50 : 1 PARAMETER MIN. MAX. UNITS Primary Inductance (Line Side) 25.4 28.6 mH Primary DC Resistance 20 ohms Secondary DC Resistance

T-13212

Abstract: 13212 850C
Contextual Info: U Interface Transformer 2B1Q Coding Applications Designed for use with National TP 3410 Turns Ratio ( + 3 % ) (Line : Chip) 1.50 : 1 PARAMETER MIN. MAX. UNITS Primary Inductance (Line Side) 25.4 28.6 mH Primary DC Resistance 20 ohms Secondary DC Resistance

T-13212G

Abstract: 2b1q transformers 850C
Contextual Info: U Interface Transformer 2B1Q Coding Applications Designed for use with National TP 3410 Turns Ratio ( + 3 % ) (Line : Chip) 1.50 : 1 PARAMETER MIN. MAX. UNITS Primary Inductance (Line Side) 25.4 28.6 mH 20 ohms Flammability: Materials used in the production of these units

ST5410

Abstract: 13205 T-13205 TP 3410 850C
Contextual Info: U Interface Transformer 2B1Q Coding Applications Designed for use with National TP 3410, SGS-Thomson ST5410 Turns Ratio ( + 3 % ) (Line : Chip) PARAMETER MIN. MAX. UNITS 25.38 28.62 mH Primary DC Resistance 10.0 ohms Secondary DC Resistance 5.0 ohms Primary Inductance (Line Side) 1

c34103

Contextual Info: Philips Semiconductors-Signetics Linear Products Product specification 10-Bit high-speed multiplying D/A converter DESCRIPTION • W ide o u tp u t voltag e com p lia n ce range PIN CONFIGURATION The M C 3410 series are 10-bit M ultiplying D igital-to-A nalog C o nverters. The y are

concept 2101S

Abstract: design of 18 x 16 barrel shifter in computer arch radix-2 dit fft flow chart jqc -3f MOC 3803 led display 16x32 Non-Linear Circuits Handbook Analog Devices mxo 841 nonlinear circuits handbook radix delta ap
Contextual Info: CES LABORATORY FUTURE ELECTRONICS INC. 5935 Airport Road, Suite 200 Mississauga, Ontario L4V1W5 TEL.: 905 612-9200 FAX: (905) 612-9185 TOLL FREE 1-800-268-7948 USING THE ADSP-2101 MICROCOMPUTER M&NUNCONTROLS a0cK INPUT c o o tc M 4 M -0 6 OU TP^ boot NIENIOW

Contextual Info: MICRO ELECTRONICS CORP ITE D b O W f l f l 000075Ô b TP A3* V rS, *tí *V INFRARED EMITTING DIODE PHYSICAL DIMENSIONS The HL-214 is a high output infrared light emitting diode using GaAlAs chip. In combining with the photo sensing devices, ML-214 is most suitable for

BFY 52 transistor

Abstract: BFY50 BOX69477 022deg BFY 39 transistor
Contextual Info: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR MICRO EL.ECTRDNIC5 MECHANICAL OUTLINE APPLICATIONS FEA TU R ES • Low Satu ratio n V o lta g e VcE *afc * • •0 .5 V typ @ IA • Audio A m p lifier O u tp u t Stag e

Contextual Info: DATA SHEET OCMOSFET PS7160-2A,PS7160L-2A 8-PIN DIP OCMOS FET 2-ch OCMOS FET DESCRIPTION T he P S 7 1 6 0 -2 A and P S 7 1 6 0 L -2 A are solid state relays con ta in in g a G aA s LED on the light em ittin g sid e (input side) and M O S FETs on the o u tp u t side.

lt 7225

Abstract: pm2sl LT 7224 HD10750
Contextual Info: y n y j x i y n 4 % D ig it C ounter/D ecoder/D river G eneral D escription The M axim ICM 7224 LC D } and ICM 7225(LED are high speed 4'h d ig it c o u n te rs , fe a tu rin g se g m e n t decoders, leading zero blanking, store and rGset inputs, and a ca rry o u tp u t that allow s cascading of 8 or m ore

Contextual Info: DATA SHEET O C M O S FET P S 7 1 4 1 - 2 A , P S 7 1 4 1 L - 2 A 8-PIN DIP OCMOS FET 2-ch OCMOS FET DESCRIPTION T he P S 7 1 4 1 -2 A and P S 7 1 4 1 L -2 A are solid state relays con ta in in g a G aA s LED on the light em ittin g sid e (input side) and M O S FETs on the o u tp u t side.

Contextual Info: Operational Amplifiers CA3410A, CA3410 Product Preview Quad BiMOS Operational Amplifiers W ith M O S F E T In p u t, B ip o la r O u tp u ts F e a tu r e s : • In te r n a lly c o m p e n s a te d m M O S F E T in p u t s ta g e a V e ry h ig h in p u t im p e d a n c e (Zn)

2SD471

Abstract: BO9477 2SB564 2SD471 TO-92
Contextual Info: The 2SB564 P N P and 2SD471 TO-92 (NPN) a re de sig n e d f o r use in d r i v e r and o u tp u t s ta g e s o f au d io fre q u e n c y a m p lifie r s . ABSOLUTE MAXIMUM RATINGS ECB 30V C o lle c t o r - B a s e V o lta g e VCBO C o lle c t o r - E m i t t e r V o lta g e

jrm a55

Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Contextual Info: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.

Contextual Info: G EN ER A L D ESC R IP T IO N :T lie 0 0 5 0 is an NPN e p ita x ia l silico n p lan ar tra n sisto r d esign ed fo r use in the a u d io o u tp u t sta g e an d co n v e rter/in v erter circu its. C o m p le m e n tary T0-92B to 8 5 5 0 . M A X IM U M R A T IN G S

Contextual Info: BC 485 BC 4 8 7 BC 489 NPN S IL IC O N PLANAR E P IT A X IA L TRANSISTORS ÏX/lICFiCD EL.EC CASE T0-92F BC485, BC487 and BC489 a r e NPN s i l i c o n p la n a r e p i t a x i a l t r a n s i s t o r s d e s ig n e d f o r use as h ig h v o lt a g e h ig h c u r r e n t d r i v e r and o u tp u t

Contextual Info: M MOTOROLA M ilitary 54F175 Quad D-Type P ositive Edge-Triggered Flip-Flop ELECTRICALLY TESTED PER: MIL-M-38510/34104 The 54F175 is a high-speed quad D flip -flo p . The device is useful fo r general flip -flo p re q u ire m e n ts w h e re clock and clear in p u ts are c o m ­

22202

Abstract: F4104 MD4104 MD4104BC MD4104BD 25cmax
Contextual Info: M IT E L T e c h n ic a l D a t a MD4104 ISO-CMOS Quad Low Voltage to High Voltage Translator with 3-State Outputs F E B . 79 LOGIC AND CONNECTION DIAGRAM • PIN-FOR-PIN COMPATIBLE WITH FAIRCHILD’S F4104/34104 • NO LATCH-UP PROBLEMS • 3-STATE FULLY BUFFERED OUTPUTS