I50MA Search Results

Contextual Info: —IH m y fe: -I& : 'i I- "1 “ I Ljk— L L i.n r r 2.5V/I50mA I : i3 IE fw?w JT For BulcBird

Contextual Info: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125

LCX244

Contextual Info: ran & Quality , S e m ic o n d u c t o r , I n c . High Speed 3.3V CMOS 8-Bit Buffers/Line Drivers qs74lcx 24o QS74LCX244 FEATURES/BENEFITS DESCRIPTION • 5V tolerant inputs and outputs The LCX240 and LCX244 are 8-bit butters/line drivers with three-state outputs that are ideal for

2N4400

Contextual Info: 45E D • T Ü C1 7 E S G GG177bl TÔS4 1 TOSHIBA TRANSISTOR 2N4400 SILICON NPN EPITAXIAL T Y P E PCT PROCESS -? TO SHI BA (D IS C R E T E / O P T O ) r> FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICEV= 100nA(M a x -) , I]jEV=-100nA(Max. )

Contextual Info: MULTILAYER CHIP CERAMIC CAPACITOR jSfflfflY5vn#*ínjMa««at», « « « « s a u t, mm, ism ««*. • * ^E-25TC~85X:X im U l*l,*?SJt#tt]S+30%, -80%. * f f A O T m iÉ ttR M M É , Ä S i H H W W » * » . * mm m . R T & m m m 'f a . 0805 1 F ~r ® 104

UDN3611M

Contextual Info: Dual Peripheral A N D Driver U D N 3 611M -13 flft @ VOH V b K Vf(K) m ft tpd ÏCC P l> £ Í* r - 9 m & tt « -n 1*1 MIN TYP MAX If = 300mA 1.5 300 200 35 40 36 40 70 V 1.75 V ns ns mA mA mA mA (A B S.) 750 500 49 53 50 50 1.5 (A B S.) 30 Io = 150mA 465Q + 15pF

ic 7411

Abstract: CHARACTERISTICS OF IC 7812
Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA 9 10-AS Draft Oct. 1997 JS P 1 RF PERFORMANCE SPECIFICATIONS fT a = 2 5 « C ’> I TYP. MAX. UNIT SYMBOL CONDITION 21.5 23.0 — dBm PldB Vds = 4 5 W 6.0 7.0 — dB GldB f = 28 GHz

Contextual Info: Revised Mar. 1998 JS9P10-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power atldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm

OZ532

Contextual Info: FLM6472-6I Internally Matched Power ¡aAs FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Condition Symbol Kem Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 31.2 w Total Power Dissipation Tc = 25°C pt Storage Temperature