Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TOSHIBA SRAM 1996 Search Results

    TOSHIBA SRAM 1996 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA SRAM 1996 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP PDF

    SM364TCSP83UI15

    Abstract: 32Kx64 D37 connector pcb
    Text: SM364TCSP83UI15 August 1996 Rev 3 SMART Modular Technologies SM364TCSP83UI15 256KByte 32Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364TCSP83UI15 is a high performance, 256 Kilobyte synchronous secondary cache SRAM module for


    Original     		SM364TCSP83UI15 SM364TCSP83UI15 256KByte 32Kx64) 160-pin, 32Kx32 32Kx64 D37 connector pcb PDF

    smart modular sram

    Abstract: cwe4 umc chipset 64kx64 16kx8 static ram ttl
    Text: SM364SCSP83UI15 August 1996 Rev 1C SMART Modular Technologies SM364SCSP83UI15 512KByte 64Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364SCSP83UI15 is a high performance, 512 Kilobyte synchronous secondary cache SRAM module for


    Original     		SM364SCSP83UI15 SM364SCSP83UI15 512KByte 64Kx64) 160-pin, 32Kx32 16Kx8 smart modular sram cwe4 umc chipset 64kx64 16kx8 static ram ttl PDF

    um61256ak-15

    Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
    Text: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7


    Original     		AT93C46-10PC AT93C46-10PC-2 AT93C46-10SC AT93C46-10SC-2 AT93C46R-10SC AT93C46R-10SC-2 AT93C46W-10SC AT93C46W-10SC-2 AT93C56-10PC AT93C56-10PC-2 um61256ak-15 w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257 PDF

    logic ic databook

    Abstract: Motorola Optoelectronics DL118 TOSHIBA IGBT DATA BOOK motorola bipolar transistor databook DL156 thermal printer 8051 microcontroller 8048 microcontroller APPLICATION national linear application notes book DL118/d toshiba Silicon Rectifier Diodes
    Text: SIRIUS The Information Tool for Electronics Commercial Documentation Distributed by Copyright 96-98 by Technical Data Systems SIRIUS The Information Tool for Electronics The Electronics is one of the fastest moving technology in the world. Quick access to


    Original     		PDF

    toshiba Nand flash

    Abstract: microcontroller based caller id toshiba nand caller id block diagram of microcontroller based caller id melp MSP58C81X VOCODERS voice recording chip TMS320
    Text: 2 • SHOWCASE APRIL 1996 S P E E C H Product Features Flash DTAD allows 28 minutes of record time ■ NAND flash interfaces ■ 4.8 or 2.4 Kbps speech compression ■ Full Duplex Speakerphone ■ Custom programs ■ External microprocessor interface ■ Internal


    Original     		MSP58C83X 100-pin toshiba Nand flash microcontroller based caller id toshiba nand caller id block diagram of microcontroller based caller id melp MSP58C81X VOCODERS voice recording chip TMS320 PDF

    generic failure rate electronic device

    Abstract: TC35856F "network interface cards"
    Text: TOSHIBA TC35856F 155 Mbps ATM PCI-SAR Features Description – – – – – – – The TC35856F is a single-chip, 155 Megabits per second Mbps segmentation assembly and reassembly (SAR) device with a PCI interface. It has hardware implemented ATM Forum-compliant


    Original     		TC35856F TC35856F, generic failure rate electronic device "network interface cards" PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC55V1664 FT - 12 TC55V1664 FT - 13 TC55V1664 F T - 15 SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664FT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		TC55V1664 536-WORD 16-BIT TC55V1664FT 576-bit TC55V1664FTâ PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC554161 F T I-85L TC554161 F T I-10L DATA SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		TC554161 I-85L I-10L 144-WORD 16-BIT TC554161FTI 304-bit TC554161FTI-Lâ PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL T C554001FL/ FTL -70 TC55 4001FL/ FTL-85 TC554001FL/ FTL-10 SILICON GATE CMOS DATA 524,288 W ORDS x 8 BIT STATIC RAM TENTATIVE DATA DESCRIPTION The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288


    OCR Scan     		C554001FL/ 4001FL/ FTL-85 TC554001FL/ FTL-10 TC554001FL/FTL 304-bit 10mA/MHz TC554001FL-7 TC554001 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55V1001 F / F T / T R - 8 5 TC55V1001 F / F T / T R - 1 0 DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words


    OCR Scan     		TC55V1001 072-WORD TC55V1001F/FT/TR 576-bit F/FT/TR-85 F/FT/TR-10 OP32-P-525) PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC554001 F L /F T L -7 0 L TC554001 F L /F T L -8 5 L TC554001 F L /F T L -1 0 L DATA SILICON GATE CMOS 524,288 W ORDS x 8 BIT STATIC RAM TENTATIVE DATA DESCRIPTION The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288


    OCR Scan     		TC554001 TC554001FL/FTL 304-bit 10mA/MHz TC554001FL-L-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TO SHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC55V1664J-12 TC55V1664J-15 SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		TC55V1664J-12 TC55V1664J-15 536-WORD 16-BIT TC55V1664J 576-bit TC55V1664J SOJ44-P-400) PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55V1864 J /FT -15 DATA SILICON GATE CMOS 65,536-WORD BY 18-BIT CMOS STATIC RAM DESCRIPTION The TC55V1864J/FT is a 1,179,648-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		TC55V1864 536-WORD 18-BIT TC55V1864J/FT 648-bit TC55V1864J/FTâ SOJ44-P-400) PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED OSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC554001 FI/FTI-85L TC554001 FI/FTI-10L SILICON GATE CMOS DATA 524,288 WORDS X 8 BIT STATIC RAM DESCRIPTION TENTATIVE DATA The TC554001FI/FTI is a 4,194,304-bit static random access memory SRAM organized as 524,288


    OCR Scan     		TC554001 FI/FTI-85L FI/FTI-10L TC554001FI/FTI 304-bit 10mA/MHz TC554001FI-L-7_ PDF

    TSOP-54P

    Abstract: No abstract text available
    Text: INTEGRATED 'OSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC554161 FTI-85L TC554161 FTI-10L DATA SILICON GATE CM O S 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION I’he TC 554l6lFn is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		TC554161 FTI-85L FTI-10L 554l6lFn 304-bit TC554161FTI-L-- TSOP-54P PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC554161 FTL-70V TC554161 FTL-85V TC554161 FTL-10V SILICON GATE CMOS DATA 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION TENTATIVE DATA The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		TC554161 FTL-70V FTL-85V FTL-10V 144-WORD 16-BIT TC554161FTL 304-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED OSHIBA CIRCUIT TECHNICAL DATA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT TC554001 FL/FTL-70 TC554001 FL/FTL- 85 TC554001 FL/FTL-10 SILICON GATE CM O S 524,288 W ORDS X 8 BIT STATIC RAM TENTATIVE DATA DESCRIPTION The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288


    OCR Scan     		TC554001 FL/FTL-70 FL/FTL-10 TC554001FL/FTL 304-bit PDF

    TC551001BPL-10

    Abstract: TC551001BPL-7
    Text: INTEGRATED TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551001 BPL / BFL / BFTL / BTRL - 70 TC551001 BPL / BFL / BFTL / BTRL - 85 TC551001 BPL/ BFL/ BFTL/ BTRL-10 DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory SRAM organized as


    OCR Scan     		TC551001 BTRL-10 072-WORD TC551001BPL/BFL/BFTL/BTRL 576-bit TSOP32-P-0820) TC551001BPL-- TC551001BPL-10 TC551001BPL-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55V1001 F I / F T I / T R I - 8 5 TC55V1001 F I / F T I / T R I - 1 0 DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001FI/FTI/TRI is a 1,048,576-bit static random access memory SRAM organized as 131,072


    OCR Scan     		TC55V1001 072-WORD TC55V1001FI/FTI/TRI 576-bit FI/FTI/TRI-85 FI/FTI/TRI-10 OP32-P-525) PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TO SH IB A M O S D IG ITAL INTEGRATED CIRCUIT CIRCUIT TC551001 BPI / BFI / BFTI / BTRI - 85L TC551001 BPI / BFI / BFTI / BTRI - 10L TOSHIBA TECHNICAL DATA SILICON GATE CM O S 1 3 1 ,0 7 2 -W O R D BY 8-BIT STATIC R A M DESCRIPTION The TC551001BPI/BFI/BFTI/BTRI is a 1,048,576-bit static random access memory SRAM organized as


    OCR Scan     		TC551001 TC551001BPI/BFI/BFTI/BTRI 576-bit whenP-525) 775TYP TC551001BPI-Lâ P32-P-0820) PDF

    TC554001

    Abstract: No abstract text available
    Text: IN TEG R A TE D T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC554001 F L / F T L - 7 0 L TC554001 F L / F T L - 8 5 L TC554001 F L / F T L - 1 0 L DATA SILICON GATE CMOS 524,288 WORDS x 8 BIT STATIC RAM DESCRIPTION TENTATIVE DATA The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288


    OCR Scan     		TC554001 FL/FTL-70L FL/FTL-85L FL/FTL-10L TC554001FL/FTL 304-bit 10mA/MHz TC554001FL-L-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TO SH IB A M O S D IG ITAL INTEGRATED CIRCUIT CIRCUIT TC554001 FI / FTI - 85 TC554001 F I / F T I - 1 0 TOSHIBA TECHNICAL DATA SILICON GATE CM O S 5 2 4 ,2 8 8 W O R D S x 8 BIT STATIC R A M TENTATIVE D A T A DESCRIPTION The TC554001FI/FTI is a 4,194,304-bit static random access memory SRAM organized as 524,288


    OCR Scan     		TC554001 TC554001FI/FTI 304-bit 10mA/MHz 1996-Q P32-P-525) PDF

    nand flash ecc bits

    Abstract: arbiter decoder -1996 M-Bits FIFO Field Memory FLASH DRIVE CONTROLLER intel 80c188
    Text: ABRIDGED VERSION / il SSI 36C3950 s é c o n M PCMCIA-ATA/IDE Flash Drive Controller Ìa n s A TDK Group/Company Advance Information February 1996 FEATURES DESCRIPTION The SSI 36C3950 ATA FLASH Controller is a CMOS monolithic integrated circuit housed in a 144-lead


    OCR Scan     		36C3950 36C3950 144-lead 20for nand flash ecc bits arbiter decoder -1996 M-Bits FIFO Field Memory FLASH DRIVE CONTROLLER intel 80c188 PDF