TC58NVG2S0FTA00
Abstract: No abstract text available
Text: TC58NVG2S0FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.
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TC58NVG2S0FTA00
TC58NVG2S0F
2048blocks.
4320-byte
TC58NVG2S0FTA00
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Untitled
Abstract: No abstract text available
Text: TC58NVG2S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.
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TC58NVG2S0FTAI0
TC58NVG2S0F
2048blocks.
4320-byte
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Untitled
Abstract: No abstract text available
Text: TC58NYG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S0F is a single 1.8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 224) bytes 64 pages 2048blocks.
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TC58NYG2S0FBAI4
TC58NYG2S0F
2048blocks.
4320-byte
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Untitled
Abstract: No abstract text available
Text: TC58NVG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 224) bytes 64 pages 2048blocks.
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TC58NVG2S0FBAI4
TC58NVG2S0F
2048blocks.
4320-byte
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Toshiba NAND BGA 224
Abstract: toshiba TC200 Toshiba BGA 224 TC200 TC220C TC223 ASIC tc220
Text: TOSHIBA TC220/223 SLI ASIC 0.3µm Standard Cell, Embedded Arrays, Gate Arrays Description The 0.3µm drawn TC220/223 ASIC technology provides the optimum density and performance needed for System-Level Integration SLI IC designs. • Accurate delay modeling ensures system
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TC220/223
TC223
Toshiba NAND BGA 224
toshiba TC200
Toshiba BGA 224
TC200
TC220C
TC223
ASIC tc220
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74AHC374m
Abstract: 74AHCT74M rca 349 74AHC374N T flip flop IC 74AHC139N 74ahc00 ti 74AHC32N 74AHC245M rca 448
Text: 74AHC & 74AHCT Standard Logic, T.I. & Others Thousands of new ICs are in the pipeline for addition and not shown below. Call us to see if you can save 10-30%. Family AHC T Package DIP SOIC TI SN74AHC(T)XXXN SN74AHC(T)XXXD/DW Jameco 74AHC(T)XXXN 74AHC(T)XXXM
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74AHC
74AHCT
SN74AHC
74AHC
MM74VHC
MC74VHC
M74VHC
74AHC374m
74AHCT74M
rca 349
74AHC374N
T flip flop IC
74AHC139N
74ahc00 ti
74AHC32N
74AHC245M
rca 448
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toshiba emmc
Abstract: 153 ball eMMC memory toshiba 16GB Nand flash emmc THGBM MMC04G toshiba 8GB Nand flash bga 4GB eMMC toshiba THGBM1G5D2EBAI7 toshiba 8GB Nand flash emmc "Manufacturer ID" eMMC
Text: THGBM1GxDxEBAIx TOSHIBA e-MMC Module 1GB / 2GB / 4GB / 8GB / 16GB / 32GB THGBM1GxDxEBAIx Series INTRODUCTION THGBM1GxDxEBAIx series are 1-GB , 2-GB , 4-GB , 8-GB , 16-GB and 32-GB densities of e-MMC Module products housed in 153/169 ball BGA package. This unit is utilized advanced TOSHIBA NAND flash device s and controller chip
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16-GB
32-GB
toshiba emmc
153 ball eMMC memory
toshiba 16GB Nand flash emmc
THGBM
MMC04G
toshiba 8GB Nand flash bga
4GB eMMC toshiba
THGBM1G5D2EBAI7
toshiba 8GB Nand flash emmc
"Manufacturer ID" eMMC
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Toshiba emmc
Abstract: THGBM eMMC data retention Toshiba NAND BGA 224 P-TFBGA153-1113-0 THGBM3G4D1FBAIG BGA 221 eMMC toshiba Toshiba emmc performance THGBM3G
Text: Preliminary THGBM3G4D1FBAIG TOSHIBA e-MMC Module 2GB THGBM3G4D1FBAIG INTRODUCTION THGBM3G4D1FBAIG is 2-GByte density of e-MMC Module product housed in 153 ball BGA package. This unit is utilized advanced TOSHIBA NAND flash device s and controller chip assembled as Multi Chip Module.
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P-TFBGA153-1113-0
Toshiba emmc
THGBM
eMMC data retention
Toshiba NAND BGA 224
THGBM3G4D1FBAIG
BGA 221 eMMC
toshiba
Toshiba emmc performance
THGBM3G
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Toshiba NAND BGA 224
Abstract: Toshiba emmc Toshiba BGA 224 toshiba emmc 4.41 4GB eMMC toshiba THGBM THGBM3G emmc jedec THGBM3G5 THGB
Text: Preliminary THGBM3G5D1FBAIE TOSHIBA e-MMC Module 4GB THGBM3G5D1FBAIE INTRODUCTION THGBM3G5D1FBAIE is 4-GByte density of e-MMC Module product housed in 169 ball BGA package. This unit is utilized advanced TOSHIBA NAND flash device s and controller chip assembled as Multi Chip Module.
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P-TFBGA169-1216-0
Toshiba NAND BGA 224
Toshiba emmc
Toshiba BGA 224
toshiba emmc 4.41
4GB eMMC toshiba
THGBM
THGBM3G
emmc jedec
THGBM3G5
THGB
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74HC00 SN74HC00D 74HC Series IC
Abstract: 74hc00t quad 74HC04 NOT GATE datasheet 74hc08m 74HC00M 74HC08T 74hc04n TI 74HC00 74hc00 datasheet 74HC04 Toshiba
Text: 74ABT & 74HC Standard Logic, T.I. & Others Thousands of new ICs are in the pipeline for addition and not shown below. Call us to see if you can save 10-30%. Semiconductors 74ABTXXX CMOS Logic Competitive Cross Reference Guide Family ABT Package DIP SOIC TI
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74ABT
74ABTXXX
SN74ABTXXXN
SN74ABTXXXD/DW
74ABTXXXN
74ABTXXXD
74ABTXXXPC
74ABTXXXSC
74HC00 SN74HC00D 74HC Series IC
74hc00t
quad 74HC04 NOT GATE datasheet
74hc08m
74HC00M
74HC08T
74hc04n
TI 74HC00
74hc00 datasheet
74HC04 Toshiba
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TOSHIBA TC160G
Abstract: Toshiba NAND 67 Bga 568ps tc160g TC190G04 tc170g TC190G TC190G02 TC190G10 C2878
Text: TOSHIBA System ASIC TC190 Series CMOS ASICs 0.6µ 3.0/3.3V ASIC Family The 0.6µm, 5V TC190 ASIC series provides higher system performance and device integration with lower power than previous generation 5V families. Highly accurate delay models, area efficient memory cells and a very fine pitch TAB bonding capability
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TC190
TC190G)
TC190E)
TC190C)
TC190E
TOSHIBA TC160G
Toshiba NAND 67 Bga
568ps
tc160g
TC190G04
tc170g
TC190G
TC190G02
TC190G10
C2878
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toshiba c640 schematic diagram
Abstract: IBM ThinkPad T23 9S12UF32 toshiba c640 dell c640 dell latitude TC58DVG02A1 toshiba Nand flash schematic diagram usb flash ram usb flash drive block diagram
Text: USB Thumb Drive Designer Reference Manual HCS12 Microcontrollers DRM061 Rev. 0 9/2004 freescale.com USB Thumb Drive Designer Reference Manual by: Kenny Lam, Derek Lau, and Dennis Lui Applications Engineering Microcontroller Division Hong Kong To provide the most up-to-date information, the revision of our documents on the World Wide Web will be
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HCS12
DRM061
toshiba c640 schematic diagram
IBM ThinkPad T23
9S12UF32
toshiba c640
dell c640
dell latitude
TC58DVG02A1
toshiba Nand flash
schematic diagram usb flash ram
usb flash drive block diagram
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tx4961
Abstract: TX4961XBG TX4961XBG-240 TX4962 BDE0095C Toshiba TX4961XBG tmpr4955bfg-200 TX4938 BDE0188B R4300
Text: TX49/H3 Core Product Specification Update Rev. 1.6 Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
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TX49/H3
ERT-TX49H3-016.
TX4961XBG-240
TX4962XBG-120
ERT-TX49H3-017
ERT-TX49H3-018,
ERT-TX49H3-019
ERT-TX49H3-020
tx4961
TX4961XBG
TX4962
BDE0095C
Toshiba TX4961XBG
tmpr4955bfg-200
TX4938
BDE0188B
R4300
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Untitled
Abstract: No abstract text available
Text: TC4SUHF C2 MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4SU11F 2 INPUT NAND GATE UnlC in mm +0.2 23 -0.3 TC4SU11F is a 2-input NAND gate, containing basic NAND circuit without the waveform shaping inverter. + 0.2 1 6 - 0.1 3- Therefore, this is suitable for applications in
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TC4SU11F
Tt-25
-50pr
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Untitled
Abstract: No abstract text available
Text: TOSHIBA ASIC TO S H IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. CMOS ASIC 1C120G SERESGITE /«RAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in highperformance systems.
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1C120G
TC120G
MA01803
MAS-0053/6-89
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toshiba tc110g
Abstract: toshiba toggle nand TC17G Series toshiba tc17g TC110G11 specifications of basic logic gates 74 series TC17G TC110G21 TC110G38 VLSI TECHNOLOGY
Text: ASIC TOSHIBA TOSHIBA AMERICA ELECTRONIC COMPONENTS, IIMC. CMOS GATE ARRAY TCllOG SERIES GITE ¿RRAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI
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TC110G
TC17G
toshiba tc110g
toshiba toggle nand
TC17G Series
toshiba tc17g
TC110G11
specifications of basic logic gates 74 series
TC110G21
TC110G38
VLSI TECHNOLOGY
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648P
Abstract: No abstract text available
Text: 1 . T C 7 4 A C /A C T Series Product Guide. TYPE NO. Function OOP/F/FN QUAD 2-INPUT NAND GATE TOOP/F/FN QUAD 2-INPUT NAND GATE 02P/F /FN QUAD 2-INPUT NOR GATE T 02P/F/FN QUAD 2-INPUT NOR GATE 04P /F /F N HEX INVERTER T04P/F/FN HEX INVERTER 05P/F /FN HEX INVERTER OPEN DRAIN
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02P/F
02P/F/FN
T04P/F/FN
05P/F
08P/F
08P/F/FN
10P/F/FN
T10P/F/FN
11P/F/FN
14P/F/FN
648P
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Untitled
Abstract: No abstract text available
Text: TC4SU11F C 2 M O S DIGITAL IN TEG RATED C IR C U IT S ILIC O N M ONOLITHIC TC4SU11F 2 INPUT NAND GATE U n lC In mm + 0.2 2.8 - 0.3 TC4SU11F is a 2-input NAM’D gate, containing basic NAM'D circuit without the waveform shaping inverter. + 0.2 16-0.1 E£- Therefore, this is suitable for applications in
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TC4SU11F
TC4SU11F
Tr-25TC.
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toshiba tc110g
Abstract: CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0
Text: ASIC TOSH IBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N T S , INC. CMOS ASIC TC120G SKES GOTE-4RRAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in high
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1C120G
TC120G
Suite205
CA92680
MA01803
5555Triangle
MAS-0053/6-89
toshiba tc110g
CMOS GATE ARRAYs toshiba
TC110G
toshiba toggle nand
74HC inverter tri-state output
TOSHIBA Gate array macro cell
110G
TC120G38
TC120G75
TC120GA0
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siemens master drive circuit diagram
Abstract: SR flip flop IC toshiba tc110g TC110G jk flip flop to d flip flop conversion SC11C1 JK flip flop IC siemens Nand gate scxc1 SR flip flop IC pin diagram
Text: SIEM EN S ASIC Product Description SCxC1 Family CMOS Gate Arrays FEATURES • Alternate source of Toshiba TC110G family ■ Densities up to 129,000 raw gates ■ Channelless “ sea of gates” architecture ■ 1.5 firn drawn CMOS technology, scalable to 1.0 /¿m
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TC110G
M33S004
siemens master drive circuit diagram
SR flip flop IC
toshiba tc110g
jk flip flop to d flip flop conversion
SC11C1
JK flip flop IC
siemens Nand gate
scxc1
SR flip flop IC pin diagram
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N TS , INC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 10OK useable gates—one of the highest in the industry.
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TC150G
TC110G,
TC120G
TC140G
MAS-0062/3-90
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TC150GC8
Abstract: TC150GH2 toshiba tc110g TC140G toshiba tc140g TC110G TC150G89 toshiba toggle nand tc120g
Text: TOSHIBA TOSHIBA. A M E R IC A ELECTRONIC C O M PO N E N TS , IIMC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 100K useable gates— one of the highest in the industry.
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TC150GCMOS
TC150G
TC110G,
TC120G
TC140G
wo220
MAS-0062/3-90
TC150GC8
TC150GH2
toshiba tc110g
toshiba tc140g
TC110G
TC150G89
toshiba toggle nand
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Untitled
Abstract: No abstract text available
Text: Lucent Technologies ND14 NAND FlashTAD— CID/AECS Information Manual August 1998 2 General Specifications 2.1 User Hardware Basics 2.1.1 Power Supply System power supply requirements are 5.0 VDC. For additional information, see the following sections of the DSP1609 data sheet: Table 2. DSP1609 Power Supply
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DSP1609
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TC140G44
Abstract: TC140G27 toshiba tc140g
Text: TOSHIBA TO SH IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. 1.0 micron TC140G CMOS Gate Array Description Features The TC140G series of 1.0 micron gate arrays has a 0.4ns gate speed and up to 172K raw gates. — Provides a 35% reduction in delay times compared to
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TC140G
MAS-0097/3-90
TC140G44
TC140G27
toshiba tc140g
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