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    TC58NVG2S0FBAI4 Search Results

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    TC58NVG2S0FBAI4 Price and Stock

    KIOXIA TC58NVG2S0FBAI4

    - Trays (Alt: TC58NVG2S0FBAI4)
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    Avnet Americas () TC58NVG2S0FBAI4 Tray 14 Weeks 210
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    TC58NVG2S0FBAI4 Tray 14 Weeks 210
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    Toshiba America Electronic Components TC58NVG2S0FBAI4JDH

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC58NVG2S0FBAI4JDH 160
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    • 100 $6.142
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    TC58NVG2S0FBAI4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TC58NVG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.


    Original     		TC58NVG2S0FBAI4 TC58NVG2S0F 2048blocks. 4320-byte PDF

    TC58NVG2S0FTA00

    Abstract: TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25
    Contextual Info: NAND Flash Memory SLC Middle Capacity Product list of NAND Flash Memory SLC Middle Capacity Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number Serial


    Original     		48-P-1220- TC58NVM9S3ETAI0 TC58NVM9S3EBAI4 TC58NVM9S3EBAI6 TC58NYM9S3EBAI4 TC58NYM9S3EBAI6 TC58DVG02D5TA00 TC58NVG2S3EBAI5 P-TFBGA63-1013- TC58NYG2S3EBAI5 TC58NVG2S0FTA00 TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25 PDF