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    TOSHIBA K3869 Search Results

    TOSHIBA K3869 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR3DG28
    		Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA
    		Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TK2R4A08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K3869 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3869

    Abstract: Toshiba K3869 K3869 Transistor 2SK3869 k386
    Contextual Info: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 K3869 Toshiba K3869 K3869 Transistor 2SK3869 k386 PDF

    K3869

    Abstract: K3869 Transistor Toshiba K3869 2SK3869
    Contextual Info: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 K3869 K3869 Transistor Toshiba K3869 2SK3869 PDF

    Toshiba K3869

    Abstract: K3869 Transistor K3869 2SK3869
    Contextual Info: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 Toshiba K3869 K3869 Transistor K3869 2SK3869 PDF

    k3869

    Abstract: Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869
    Contextual Info: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 k3869 Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869 PDF

    K3869 Transistor

    Abstract: Toshiba K3869 2SK3667,2SK3869,K3869,
    Contextual Info: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 K3869 Transistor Toshiba K3869 2SK3667,2SK3869,K3869, PDF