TOSHIBA FREE WHEELING DIODE Search Results

Contextual Info: TOSHIBA TENTATIVE TA8323F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA 8 323 F LOW SATURATION VOLTAGE DRIVER FOR MOTOR TA8323F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and free­ wheeling diode.

MG30G6EL2

Abstract: EGA-HG30G6EL2-1 TOSHIBA bat dt60A toshiba free wheeling diode
Contextual Info: TOSHIBA SEMICONDUCTOR TOSHIBA GTR MODULE MG30G6EL2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES! . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package.

Contextual Info: TOSHIBA MP6757 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6757 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 05.7 ± 0.2 • The electrodes are isolated from case. • 6 IGBTs are 6 free wheeling diodes are built into 1 package.

k3314

Abstract: 2SK3314
Contextual Info: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) Built-in high-speed free-wheeling diode

K3316

Abstract: 2SK3316
Contextual Info: 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3316 Switching Regulator Applications z Fast reverse recovery time Unit: mm : trr = 60 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance

K3316

Abstract: 2SK3316
Contextual Info: 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3316 Switching Regulator Applications z Fast reverse recovery time Unit: mm : trr = 60 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance

K2525

Abstract: TA8323 RN5006 RN6006 SSOP16 TA8323F
Contextual Info: TO SH IBA TENTATIVE TA8323F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA8323F LOW SATURATION VOLTAGE DRIVER FOR MOTOR TA8323F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and free­ wheeling diode.

k3316

Abstract: 2SK3316
Contextual Info: 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3316 Switching Regulator Applications z Fast reverse recovery time Unit: mm : trr = 60 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance

k3314

Abstract: 2SK3314
Contextual Info: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode

K3313

Abstract: 2SK3313
Contextual Info: 2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3313 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 90 ns (typ.) z Built-in high-speed free-wheeling diode

Contextual Info: MP6757 TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications Unit: mm • The electrodes are isolated from case. • 6 IGBTs are 6 free wheeling diodes are built into 1 package. • Enhancement-mode •

k3316

Abstract: 2sk3316
Contextual Info: 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3316 Switching Regulator Applications Fast reverse recovery time Unit: mm : trr = 60 ns (typ.) Built-in high-speed free-wheeling diode Low drain−source ON resistance : RDS (ON) = 1.6 Ω (typ.)

MG300M1FK1

Abstract: DIODE S3L DIODE TP S3L
Contextual Info: T O SH IB A TOSHIBA GTR MODULE SEMICONDUCTOR MG300M1FK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M6 FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode

k3314

Abstract: 2SK3314
Contextual Info: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode

K3314

Abstract: 2SK3314
Contextual Info: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode

k3313

Abstract: 2SK3313
Contextual Info: 2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3313 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 90 ns (typ.) z Built-in high-speed free-wheeling diode

MP6757

Abstract: 2-78a1a VQE 12 44G1
Contextual Info: TO SH IBA MP6757 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6757 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 05.7 ±0.2 The electrodes are isolated from case. 6 IGBTs are 6 free wheeling diodes are built intu 1 package. Enhancement-mode

2SK3131

Abstract: TRANSISTOR 2sk3131
Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain−source ON resistance

MG50M2CK1

Abstract: EGA-MG50M2CK1-1
Contextual Info: TOSHIBA GTR MODULE TOSHIBA SEMICONDUCTOR MG50M2CK1 SILICON NPN TRIPLE DIFFUSED TYPE TECH N ICA L DATA HIGH POWER S W I T C H I N G APPLICATIONS. M O T O R CONT O R L APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling

2SK3131

Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance

2SK3131

Abstract: TRANSISTOR 2sk3131
Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON-resistance

2SK3131

Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance

2SK3131

Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance

Contextual Info: MP6757 TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications Unit: mm • The electrodes are isolated from case. · 6 IGBTs are 6 free wheeling diodes are built into 1 package. · Enhancement-mode · High speed : tf = 0.35 µs max (IC = 25 A)