MP6757 Search Results

Contextual Info: TOSHIBA MP6757 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6757 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 05.7 ± 0.2 • The electrodes are isolated from case. • 6 IGBTs are 6 free wheeling diodes are built into 1 package.

Contextual Info: MP6757 TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications Unit: mm • The electrodes are isolated from case. · 6 IGBTs are 6 free wheeling diodes are built into 1 package. · Enhancement-mode · High speed : tf = 0.35 µs max (IC = 25 A)

Contextual Info: MP6757 TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications Unit: mm • The electrodes are isolated from case. • 6 IGBTs are 6 free wheeling diodes are built into 1 package. • Enhancement-mode •

MP6757

Abstract: 2-78a1a VQE 12 44G1
Contextual Info: TO SH IBA MP6757 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6757 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 05.7 ±0.2 The electrodes are isolated from case. 6 IGBTs are 6 free wheeling diodes are built intu 1 package. Enhancement-mode

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228