Untitled
Abstract: No abstract text available
Text: 6N135,6N136 TOSHIBA Photocoupler GaA As Ired & Photo IC 6N135, 6N136 Digital Logic Isolation. Line Receiver. Power Supply Control Switching Power Supply Transistor Inverter Unit in mm The TOSHIBA 6N135 and 6N136 consists of a high emitting diode and a one chip photo diode−transistor.
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6N135
6N136
6N135,
6N136
2500Vrms
TLP550
UL1577,
E67349
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10C4
Abstract: 6N135 6N136 E67349 TLP550 ic 6n136 6N136-V
Text: 6N135,6N136 TOSHIBA Photocoupler GaAℓAs Ired & Photo IC 6N135, 6N136 Digital Logic Isolation. Line Receiver. Power Supply Control Switching Power Supply Transistor Inverter Unit in mm The TOSHIBA 6N135 and 6N136 consists of a high emitting diode and a one chip photo diode−transistor.
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Original
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PDF
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6N135
6N136
6N135,
6N136
2500Vrms
TLP550
UL1577,
E67349
10C4
E67349
ic 6n136
6N136-V
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Untitled
Abstract: No abstract text available
Text: 6N135,6N136 TOSHIBA Photocoupler GaAℓAs Ired & Photo IC 6N135, 6N136 Digital Logic Isolation. Line Receiver. Power Supply Control Switching Power Supply Transistor Inverter Unit in mm The TOSHIBA 6N135 and 6N136 consists of a high emitting diode and a one chip photo diode−transistor.
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Original
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PDF
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6N135
6N136
6N135,
6N136
2500Vrms
TLP550
UL1577,
E67349
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tlp550
Abstract: ic 6n136 10C4 6N135 6N136 E67349 6n136 toshiba
Text: 6N135,6N136 TOSHIBA Photocoupler GaAℓAs Ired & Photo IC 6N135, 6N136 Digital Logic Isolation. Line Receiver. Power Supply Control Switching Power Supply Transistor Inverter Unit in mm The TOSHIBA 6N135 and 6N136 consists of a high emitting diode and a one chip photo diode−transistor.
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Original
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PDF
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6N135
6N136
6N135,
6N136
2500Vrms
TLP550
UL1577,
E67349
ic 6n136
10C4
E67349
6n136 toshiba
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Untitled
Abstract: No abstract text available
Text: TLP2530,TLP2531 TOSHIBA Photocoupler GaA As Ired & Photo IC TLP2530, TLP2531 Digital Logic Isolation Line Receiver Power Supply Control Switching Power Supply Transistor Inverter Unit in mm The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a pair of GaA As light emitting diode and integrated photodetector.
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TLP2530
TLP2531
TLP2530,
TLP2531
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TLP2531
Abstract: E67349 TLP2530
Text: TLP2530JLP2531 TOSHIBA TOSHIBA PHOTOCOUPLER GaAMs IRED & PHOTO IC TLP2530, TLP2531 DEGITAL LOGIC ISOLATION LINE RECEIVER POWER SUPPLY CONTROL SWITCHING POWER SUPPLY Unit in mm The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a pair of GaA€As light emitting diode and integrated photodetector.
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TLP2530
TLP2531
TLP2530,
TLP2531
2500Vrms
E67349
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6N135
Abstract: 6n135-5 6N1353 tlp550 1012 TOSHIBA fpt-1 6N136 E67349 FPT1 6N136 toshiba
Text: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA PHOTOCOUPLER 6N135, 6N136 G a A i As IRDE & PHOTO IC 6N135 DIGITAL LOGIC ISOLATION. U nit in mm LINE RECEIVER. POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTER. The TOSHIBA 6N135 and 6N136 consists of a high em itting diode
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6N135,
6N136
6N135)
6N135
6N136
2500Vrms
TLP550
UL1577,
E67349
11-10C4
6n135-5
6N1353
1012 TOSHIBA
fpt-1
E67349
FPT1
6N136 toshiba
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Untitled
Abstract: No abstract text available
Text: 6N135,6N136 TO SH IBA TOSHIBA PHOTOCOUPLER GaAMs IRED & PHOTO IC DIGITAL LOGIC ISOLATION. LINE RECEIVER. POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTER 6N135, 6N136 Unit in mm 6 5 The TOSHIBA 6N135 and 6N136 consists of a high emitting diode
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6N135
6N136
6N135,
6N136
2500Vrms
TLP550
UL1577,
E67349
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Untitled
Abstract: No abstract text available
Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL 6N135, 6N136 DATA GaA€As IRDE & PHOTO IC 6N135 DIGITAL LOGIC ISOLATION. U nit in mm LINE RECEIVER. POWER SUPPLY CONTROL 8 SWITCHING POWER SUPPLY ,‘t i 7 rr3 6 5 ti rr 3 4 TRANSISTOR INVERTER. 1 2 The TOSHIBA 6N135 and 6N136 consists of a high em itting diode
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6N135,
6N136
6N135)
6N135
6N136
2500Vrms
TLP550
UL1577,
E67349
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JP303
Abstract: No abstract text available
Text: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION + • • 2 -8 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vp = 0.23V TYP. @Ijr = 5mA 0.2 0.3 + 0.2
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HN2S01F
HN2S01F
100mA
JP303
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D01F is composed of 3 independent diodes. + 0.2 2.8 - 0.3 • Low Forward Voltage 1 . 6 - 0.1 • Fast Reverse Recovery Time : trr= 1.6ns Typ.
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HN2D01F
HN2D01F
961001EAA2'
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HN2D01F
Abstract: lu2b
Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • +0.2 2.8 - 0.3 +0.2 1.6-0.1 H N 2D01F is composed of 3 independent diodes. • Low Forward Voltage • F a st Reverse Recovery Time : trr = 1.6ns Typ.
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HN2D01F
HN2D01F
961001EAA2'
lu2b
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6N136
Abstract: 1012 TOSHIBA 6N135 E67349 TLP550 ic 6n136
Text: T O S H IB A 6N135,6N136 TOSHIBA PHOTOCOUPLER G a A M s IRED & PHOTO IC 6N135, 6N136 Unit in mm DIGITAL LOGIC ISOLATION. LINE RECEIVER. PO W ER SUPPLY CONTROL SWITCHING PO W ER SUPPLY TRANSISTOR INVERTER The TOSHIBA 6N135 and 6N136 consists of a high emitting diode
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6N135
6N136
6N135,
6N136
2500Vrms
TLP550
UL1577,
E67349
1012 TOSHIBA
E67349
ic 6n136
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h N1 n n 1 F • ■ m 'm mmr w ■ ■ Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • HN2D01F is composed of 3independent diodes. Low Forward Voltage : V f 3 = 0.98V (Typ.)
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HN2D01F
HN2D01F
a--25
961001EAA2'
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7 pin Inverter toshiba
Abstract: TLP550
Text: GaAÆAs IRED a PHOTO-IC 6N135,136 Unit in mm DEGITAL LOGIC ISOLATION. LINE RECEIVER. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. TRANSISTOR INVERTER. The TOSHIBA 6N135 and 6N136 consist of a high emitting diode and a one chip photo diode-transistor. Each unit is 8-lead DIP package.
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6N135
6N136
TLP550
E67349
7 pin Inverter toshiba
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN1D02F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h N1 n ni F m m m 'm m mmr w • ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.2 • HN1D02F is composed of 2 u n it of cathode common. Z.0-0.3 • Low Forward Voltage : V f 3 —0.90V (Typ.)
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HN1D02F
HN1D02F
961001EAA2'
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CIT36
Abstract: No abstract text available
Text: TLP599A TO SHIBA TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP599A TELECOMMUNICATION DATA ACQUISITION U nit in mm M F A Ç I J R F M F M T INKTRl I M FMTATI OW The TOSHIBA ,i ’LJr’5y9A consists of a gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead
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TLP599A
TLP599A
300mA
2500Vrms
UL1577.
E67349
11-7A8
CIT36
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 6N135,6N136 TOSHIBA PHOTOCOUPLER GaA M s IRED & PHOTO IC 6N135, 6N136 DIGITAL LOGIC ISOLATION. LINE RECEIVER. POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTER The T O S H IB A 6N135 and 6N136 consists of a high, em itting diode and a one chip photo diode-transistor.
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6N135
6N136
6N135,
6N136
TLP550
UL1577,
E67349
ANODE27
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diode 1fp
Abstract: TLP3520A
Text: GaAs IRED TLP3520A Q. PHOTO-TRIAC TRIAC DRIVFR Unit in mm PROGRAMMABLE CONTROLLERS AC-OIJTPIIT MODULE SOLID STATE RELAY The TOSHIBA TLP3520A consists of a photo-triac optically coupled to n gallium arsenide infrared emitting diode in a H> lead plastic DTP package.
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TLP3520A
TLP3520A
2500Vrnis
P3520A
diode 1fp
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3GH61
Abstract: No abstract text available
Text: 9097250 TOSHIBA <D I S C R E T E / O P T O _ FAST RECOVERY DIODE 1500V O T* 6 ^ DE I T G T T S S D DDD E SM S T TOSHIBA -CDISCRETE/OPTOJ 1S2711 39C 0 2242 Unit in Bn 1.5 A MAXIMUM RATINGS C H A R A C T E R IS T IC SYM BO L U N IT R A T IN G V rrm 1500
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1S2711
3GH61
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Untitled
Abstract: No abstract text available
Text: GaAßAs IRED & PHOTO-IC TLP2530,2531 DEGITAL LOGIC ISOLATION. Unit in mm LINE RECEIVER. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. TRANSISTOR INVERTER. 1 The TOSHIBA TLP2530 and TLP2531 dual photocouplers 4 7.62 ±Q25 a66±Q25 consist of a pair of GaA£As light emitting diode and
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TLP2530
TLP2531
2500Vrms
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TA7176AP
Abstract: toshiba TA7176AP TA7176
Text: TOSHIBA TA7176AP TELEVISION SOUND SYSTEM U n i t : nun . Electronic Attenuator Replaces Conventional Volume Control. . High Sensitivity : V jfq lim “200/iV (Typ.) 3""L_J ' 'E I L J L J L J > '•— ; . Internal Zener Diode Regulated Supply . Excellent AM Rejection : AMR=50dB (Typ.)
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TA7176AP
200/iV
400Hz
TA7176AP
toshiba TA7176AP
TA7176
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ir20d
Abstract: 3DH61 3JH61 1S2711 3GH61 3BH61
Text: 9097250 TOSHIBA <D IS C R E T E / O P T O _ FAST RECOVERY DIODE 39C 0 2 2 4 2 DE I T G T T H S D TOSHIBA -CDISCRETE/0PT0} 1500V 1.5A 1S2711 O T ~ 6 3_-' * DDDE54S T Unit in am M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L U N IT R A T IN G
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1S2711
20diA,
ir20d
3DH61
3JH61
1S2711
3GH61
3BH61
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV257 Discrete Semiconductors Variable Capacitance Diode U n it in m m Silicon Epitaxial Planar Type VCO For UHF Ratio F eatu res • Ultra Low Series Resistance : rs = 0.2Q Typ. • Useful for Small Size Set A b s o lu te M a x im u m R a tin g s (Ta = 2 5 °C)
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1SV257
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