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    TO72 Price and Stock

    KEMET Corporation C0805C222K2RECAUTO7210

    CAP CER 0805 2.2NF 200V X7R
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    DigiKey C0805C222K2RECAUTO7210 Cut Tape 14,845 1
    • 1 $0.24
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    KEMET Corporation C1206C153JAGACAUTO7210

    CAP CER 0.015UF 250V 1206
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    DigiKey C1206C153JAGACAUTO7210 Cut Tape 9,465 1
    • 1 $0.98
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    C1206C153JAGACAUTO7210 Digi-Reel 9,465 1
    • 1 $0.98
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    Mouser Electronics C1206C153JAGACAUTO7210 29,877
    • 1 $0.99
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    • 100 $0.468
    • 1000 $0.342
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    KEMET Corporation C0805C475K3RACAUTO7210

    CAP CER 0805
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    DigiKey C0805C475K3RACAUTO7210 Cut Tape 8,390 1
    • 1 $0.59
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    Newark C0805C475K3RACAUTO7210 Cut Tape 10,000
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    C0805C475K3RACAUTO7210 Reel 10,000
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    Vyrian C0805C475K3RACAUTO7210 6,629
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    KEMET Corporation C1206C475K5RACAUTO7210

    CAP CER 1206
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    DigiKey C1206C475K5RACAUTO7210 Cut Tape 7,444 1
    • 1 $0.4
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    Newark C1206C475K5RACAUTO7210 Reel 8,000
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    C1206C475K5RACAUTO7210 Cut Tape 8,000
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    Avnet Abacus C1206C475K5RACAUTO7210 Reel 20 Weeks 8,000
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    Vyrian C1206C475K5RACAUTO7210 14,683
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    KEMET Corporation C1206C684J5RECAUTO7210

    CAP CER 1206 680NF 50V X7R 5%
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    DigiKey C1206C684J5RECAUTO7210 Digi-Reel 3,438 1
    • 1 $0.44
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    • 100 $0.44
    • 1000 $0.13102
    • 10000 $0.11258
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    C1206C684J5RECAUTO7210 Cut Tape 3,438 1
    • 1 $0.44
    • 10 $0.266
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    • 1000 $0.13102
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    Newark C1206C684J5RECAUTO7210 Bulk 1
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    C1206C684J5RECAUTO7210 Reel 10,000
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    TO72 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-72 National Semiconductor Metal Can Packages (TO-3/TO-5/TO-8/TO-18/TO-39/TO-46/TO-52/TO-72) Original PDF
    TO-721 Vectron International Temperature Compensated Crystal Oscillator Original PDF
    TO-7-210 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-7-210 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-722 Vectron International Temperature Compensated Crystal Oscillator Original PDF
    TO-723 Vectron International Temperature Compensated Crystal Oscillator Original PDF
    TO-724 Vectron International Temperature Compensated Crystal Oscillator Original PDF

    TO72 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    scs thyristor

    Abstract: icer capacitor NTE239
    Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage


    Original     		NTE239 NTE239 scs thyristor icer capacitor PDF

    To-206AF

    Abstract: TO72 package To206AF 206af TO72 1455
    Text: Semelab Aerospace Package Dimensions 5.31 0.210 5.84 (0.230) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 2.54 (0.100) Nom. 4 12.7 (0.500) min. 3 0.48 (0.019) 0.41 (0.016) dia. 1 2 Dimensions in mm (inches) TO72 Semelab Plc Tel +44 (0) 1455 556565


    Original     		O-206AF) To-206AF TO72 package To206AF 206af TO72 1455 PDF

    2N3824

    Abstract: 2N6660Q 2N6660CSM4-JQR-B TO276AB 2N4393CSMJ
    Text: Search Results Part number search for devices beginning "2N3824" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N3824 N-Channel TO72 50V - 0.3W -


    Original     		2N3824" 2N3824 2N3824LP 2N3824-TO46 2N3824-TO72 2N6660" 2N6660 2N6660CSM4 2N6660CSM4-JQR-B 2N6660-JQR-B 2N6660Q TO276AB 2N4393CSMJ PDF

    NTE456

    Abstract: TO72 package
    Text: NTE456 N–Channel Silicon JFET General Purpose Amp, Switch Description: The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed for general purpose amplifier and switching applications. Absolute Maximum Ratings:


    Original     		NTE456 NTE456 30MHz 100Hz 630ms, TO72 package PDF

    CNY18V

    Abstract: CNY18IV CNY18 CNY18III
    Text: CNY18 Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for high reliability requirements. 96 12257


    Original     		CNY18 CNY18 CNY18III CNY18IV CNY18V 11-Jun-96 D-74025 CNY18V CNY18IV CNY18III PDF

    TO72 package n-channel jfet

    Abstract: TRANISTOR JFET TO72 package NTE452
    Text: NTE452 Silicon N–Channel JFET Transistor VHF Amplifier, Mixer Description: The NTE452 is a silicon, N–channel junction field effect tranistor JFET in a TO72 type package designed to be used in the depletion mode in VHF/UHF amplifiers. Absolute Maximum Ratings:


    Original     		NTE452 NTE452 100MHz 400MHz TO72 package n-channel jfet TRANISTOR JFET TO72 package PDF

    K120P

    Abstract: No abstract text available
    Text: K120P TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The K120P consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead TO72 metal can package for high reliability requirements.


    Original     		K120P K120P K12substances. D-74025 PDF

    2n5268

    Abstract: 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266
    Text: BVgss Ciss Type Case Geometry Min Max Number Style V (pF) 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 KK4360 KK4381 KK4382 2N5020 2N5021 KK5033 2N5265 2N5266 2N5267 2N5268 2N5460 2N5461 2N5462 UC451 TO18 TO18 TO72 TO72 TO72 TO72


    Original     		2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 2n5268 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266 PDF

    scs thyristor

    Abstract: TO72 package
    Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage


    Original     		NTE239 NTE239 scs thyristor TO72 package PDF

    CNY18

    Abstract: CNY18IV CNY18III CNY18V
    Text: Tem ic CNY18 S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for


    OCR Scan     		cny18 CNY18III CNY18IV CNY18V ll-Jun-96 00103bt. DDlfl371 -Jun-96 PDF

    2N3907

    Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
    Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)


    Original     		2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic CNY18 S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for


    OCR Scan     		CNY18 CNY18 CNY18III CNY18IV CNY18V 11-Jun-96 PDF

    oscillator pnp 800MHZ

    Abstract: NTE160 "PNP Transistor" transistor germanium Germanium power
    Text: NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V


    Original     		NTE160 NTE160 900MHz. 100MHz 450kHz 800MHz oscillator pnp 800MHZ "PNP Transistor" transistor germanium Germanium power PDF

    K120P

    Abstract: b 11061
    Text: K120P Optocoupler with Phototransistor Output Description The K120P consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a hermetically sealed 4-lead TO72 metal can package for high reliability requirements. 96 12257


    Original     		K120P K120P 13-Jun-96 D-74025 b 11061 PDF

    2N3330

    Abstract: 2N3332 2N3331 2n3329
    Text: TYPES 2N3329 THRU 2N3332 P CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O D L S 644905, M A R C H 1964 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS


    OCR Scan     		2N3329 2N3332 2K3329 2N3330 2N333I 2N3331 PDF

    LS5301

    Abstract: No abstract text available
    Text: LS5301 N-CHANNEL JFET Linear Systems replaces discontinued LF5301 and PF5301 The LS5301 is a very High Input Impedance N-Channel JFET amplifier The LS5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise.


    Original     		LS5301 LF5301 PF5301 LF5301 PDF

    Untitled

    Abstract: No abstract text available
    Text: DPAD2 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix DPAD2 The DPAD2 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD2 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current leakage must


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DPAD100 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix DPAD100 The DPAD100 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD100 extremely low-leakage monolithic dual diode provides a superior alternative to conventional


    Original     		DPAD100 DPAD100 PDF

    3N170

    Abstract: No abstract text available
    Text: 3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		3N170 3N170 PDF

    Untitled

    Abstract: No abstract text available
    Text: DPAD5 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix DPAD5 The DPAD5 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD5 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current leakage must


    Original     		PDF

    3N163

    Abstract: TO72 package
    Text: 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		3N163 3N163 375mW TO72 package PDF

    2N4117

    Abstract: No abstract text available
    Text: 2N4117 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4117 The 2N4117 is an Ultra-High Input Impedance N-Channel JFET The 2N4117 provides ultra-high input impedance. The device is specified with a 10-pA limit and is ideal for use as a high-impedance sensitive front-end amplifier.


    Original     		2N4117 2N4117 10-pA Gat2N4117 PDF

    2n2857 UHF transistor common base amplifier

    Abstract: 2N2857
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 •


    Original     		2N2857 To-72 2N2857 2n2857 UHF transistor common base amplifier PDF

    MRF581G

    Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581
    Text: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA


    Original     		MRF581 MRF581G MRF581A MRF581AG 2N6255 2N5179 MRF581G MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581 PDF