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    TO252A Price and Stock

    PanJit Semiconductor PJD18N20-L2-00001

    MOSFETs TO252 200V 18A N-CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PJD18N20-L2-00001 Reel 48,000 3,000
    • 1 -
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    • 10000 $0.31
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    Vishay Intertechnologies VS-50WQ06FN-M3

    Schottky Diodes & Rectifiers Schottky - D-PAK-e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI VS-50WQ06FN-M3 Tube 32,400 75
    • 1 -
    • 10 -
    • 100 $0.263
    • 1000 $0.263
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    Vishay Intertechnologies VS-12CWQ03FN-M3

    Schottky Diodes & Rectifiers Schottky - D-PAK-e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI VS-12CWQ03FN-M3 Tube 20,925 75
    • 1 -
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    • 100 $0.457
    • 1000 $0.384
    • 10000 $0.335
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    Vishay Intertechnologies VS-50WQ03FN-M3

    Schottky Diodes & Rectifiers 5.5A 30V Single Die
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI VS-50WQ03FN-M3 Tube 16,800 75
    • 1 -
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    • 100 $0.274
    • 1000 $0.258
    • 10000 $0.248
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    Vishay Intertechnologies VS-50WQ04FN-M3

    Schottky Diodes & Rectifiers Schottky - D-PAK-e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI VS-50WQ04FN-M3 Tube 16,500 75
    • 1 -
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    • 100 $0.316
    • 1000 $0.291
    • 10000 $0.267
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    Find more TO252A price and stock on Findchips.com

    TO252A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-252AA Harris Semiconductor HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE Original PDF
    TO-252AA Package International Rectifier Case Outline and Dimensions Original PDF
    TO-252AA Package International Rectifier Case Outline and Dimensions Original PDF
    TO-252AA Package Intersil SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE Original PDF
    TO-252AA Package Intersil 16mm TAPE AND REEL Original PDF

    TO252A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    F16N06

    Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
    Text: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET


    Original     		RFD16 N06SM) O251AA, O252AA) RFD16N06, RFD16N06SM 1e-30 07e-3 19e-7) F16N06 N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334 PDF

    IRFR120

    Abstract: IRFU120 TB334
    Text: [ /Title IRFR 120, IRFU1 20 /Subject (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO251AA , TO252AA IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel


    Original     		O251AA O252AA IRFR120, IRFU120 IRFR120 IRFU120 TB334 PDF

    TC227

    Abstract: No abstract text available
    Text: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs


    Original     		IRFR9220, IRFU9220 TA17502. TC227 PDF

    TO-252AA Mechanical dimensions

    Abstract: VS-50WQ04
    Text: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition


    Original     		VS-50WQ04FN-M3 2002/95/EC O-252AA) J-STD-020, VS-50WQ04FN-M3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. TO-252AA Mechanical dimensions VS-50WQ04 PDF

    100 20L A1 diode

    Abstract: SQD30N05-20L-GE3
    Text: SQD30N05-20L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A)


    Original     		SQD30N05-20L AEC-Q101 O-252 O-252 SQD30N05-20L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 100 20L A1 diode SQD30N05-20L-GE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQD50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0041 ID (A) 50 Configuration Single TO-252 TrenchFET Power MOSFET Package with Low Thermal Resistance


    Original     		SQD50N04-4m1 AEC-Q101 O-252 O-252 SQD50N04-4m1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    sud35n10

    Abstract: No abstract text available
    Text: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch


    Original     		SUD35N10-26P O-252 SUD35N10-26P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sud35n10 PDF

    Q503

    Abstract: No abstract text available
    Text: VS-12CWQ03FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Popular D-PAK outline • Center tap configuration • Small foot print, surface mountable • Low forward voltage drop • High frequency operation 2 Common


    Original     		VS-12CWQ03FNPbF O-252AA) 2002/95/EC J-STD-020, VS-12CWQ03FNPbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. Q503 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120, SiHFR9120)


    Original     		IRFR9120, IRFU9120, SiHFR9120 SiHFU9120 2002/95/EC O-252) PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MURD620CTPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode


    Original     		VS-MURD620CTPbF O-252AA) 2002/95/EC J-STD-020, VS-MURD620CTPbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    IRFR320PBF

    Abstract: IRFR320TRL
    Text: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320)


    Original     		IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) IRFR320 IRFU320 2002/95/EC IRFR320PBF IRFR320TRL PDF

    IRLR110

    Abstract: No abstract text available
    Text: IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR110, SiHLR110) • Straight Lead (IRLU110, SiHLU110)


    Original     		IRLR110, IRLU110, SiHLR110 SiHLU110 O-252) 2002/95/EC IRLR110 PDF

    sud40n10-25-e3

    Abstract: No abstract text available
    Text: SUD40N10-25 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 40 0.028 at VGS = 4.5 V 38 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested


    Original     		SUD40N10-25 O-252 SUD40N10-25 SUD40N10-25-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sud40n10-25-e3 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-12CWQ06FN-M3 Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition 2 Common


    Original     		VS-12CWQ06FN-M3 O-252AA) J-STD-020, 2002/95/EC VS-12CWQ06FN-M3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    SCR 30A 400V

    Abstract: JESD22-A101 JESD22-A102 TO-251AA Package S6006 S6006RS2
    Text: Teccor brand Thyristors 6 Amp Sensitive & Standard SCRs Sxx06xSx & Sxx06x Series ® Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps


    Original     		Sxx06xSx Sxx06x E71639 S6006DS2 S6006RS2 O-220 O-251 O-252 SCR 30A 400V JESD22-A101 JESD22-A102 TO-251AA Package S6006 S6006RS2 PDF

    ah30 diode

    Abstract: AH34 mosfet ak24 diode thermistor M33 irf7832 ISL62882 n34 transistor w8 mosfet transistor c36 Burndy y34 lug specifications
    Text: ISL62882EVAL2Z User Guide Application Note April 9, 2009 AN1461.0 Author: Jia Wei Introduction Interface Connections The ISL62882EVAL2Z evaluation board demonstrates the performance of the ISL62882 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5


    Original     		ISL62882EVAL2Z AN1461 ISL62882 ah30 diode AH34 mosfet ak24 diode thermistor M33 irf7832 n34 transistor w8 mosfet transistor c36 Burndy y34 lug specifications PDF

    Untitled

    Abstract: No abstract text available
    Text: FS1209.D STANDARD SCR On-State Current 12 Amp TO-252AA DPAK 2 2 mA to 15 mA Off-State Voltage 400 V ÷ 800V FEATURES • Glass/passivated die junctions • Medium current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop


    Original     		FS1209 O-252AA 2011/65/EU 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 fs1209dst Sep-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: FS08.D STANDARD SCR On-State Current 8 Amp TO-252AA DPAK 2 0.5 mA to 15 mA Off-State Voltage 400 V ÷ 800V FEATURES • Glass/passivated die junctions • Medium current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop


    Original     		O-252AA 2011/65/EU 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 fs08dst May-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: FT04.D HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 4 Amp £ 50 mA Off-State Voltage 400 V ÷ 800 V TO-252AA DPAK FEATURES • Glass/passivated die junctions • Medium current Triac • Low thermal resistance • Ideal for automated placement


    Original     		O-252AA 2011/65/EU 2002/96/EC J-STD-020, ft04dhc May-13 PDF

    mosfet 4684

    Abstract: C2022 1N4148 HIP6020 HIP6020EVAL1 HIP6021 HIP6021EVAL1 pentium 4 atx power supply diagram Integrated Circuit PWM ATX T68-52A
    Text: Motherboard Power Conversion Solutions Using the HIP6020 and HIP6021 Controller ICs Application Note Introduction The rapidly changing desktop motherboard architecture for core processor and Accelerated Graphics Port AGP voltages demand innovative power conversion solutions.


    Original     		HIP6020 HIP6021 HIP6020 HIP6021 HIP6020EVAL1 HIP6021EVAL1 AN9836 HIP6020EVAL1 mosfet 4684 C2022 1N4148 pentium 4 atx power supply diagram Integrated Circuit PWM ATX T68-52A PDF

    d8p05

    Abstract: RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842
    Text: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs 2384.2 Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,


    Original     		RFD8P05, RFD8P05SM, RFP8P05 TA09832. d8p05 RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842 PDF

    8EWS12S

    Abstract: AN-994
    Text: 8EWS.SPbF High Voltage Series Vishay High Power Products Surface Mountable Input Rectifier Diode, 8 A DESCRIPTION/FEATURES Base cathode 4, 2 D-PAK 1 Anode The 8EWS.SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation


    Original     		11-Mar-11 8EWS12S AN-994 PDF

    marking code H1a

    Abstract: AUIRLR3105TR AUIRLR3105 12-00-16c
    Text: PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET Advanced Planar Technology l Logic-Level Gate Drive l Dynamic dV/dT Rating l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed


    Original     		7703A AUIRLR3105 marking code H1a AUIRLR3105TR AUIRLR3105 12-00-16c PDF

    GE Refrigerator Compressor

    Abstract: 400v 20A ultra fast recovery diode 2245-2
    Text: PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 9.0A, TC = 100°C Features • • • • • Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode


    Original     		IRG7RC10FDPbF EIA-481 EIA-541. EIA-481. GE Refrigerator Compressor 400v 20A ultra fast recovery diode 2245-2 PDF