IRFU9220 Search Results

irfr9220

Abstract: 9221 irfu9220 ELLS 110 ISE Electronics irfr9221 TI55
Contextual Info: IRFR9220/9221 IRFU9220/9221 P-CHANNEL POWER MOSFETS FEATURES D-PAK • Low er R ds on • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Low er input capacitance • Extended sa fe operating area

irfu9220

Abstract: 7z mosfet AN-994 IRFR9220 T0252AA
Contextual Info: PD-9.522D International irêRl Rectifier IRFR9220 IRFU9220 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9220 Straight Lead (IRFU9220) Available in Tape & Reel P-Channel Fast Switching

SiHFU9220-GE3

Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9220, SiHFR9220)

Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9220, SiHFR9220)

if9220

Abstract: TC227 irfu9220 IRFR9220 TB334
Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching

Contextual Info: IRFU9220 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)3.6 I(DM) Max. (A) Pulsed I(D)2.3 @Temp (øC)100# IDM Max (@25øC Amb)14 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)42 Minimum Operating Temp (øC)-55õ

IRFR9220

Abstract: SiHFU9220 irfu9220 SiHFR9220 SiHFR9220-E3
Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 1.5 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single S DPAK (TO-252) IPAK (TO-251) Dynamic dV/dt Rating Repetitive Avalanche Rated

ANSI/EIA-310-D

Contextual Info: PD - 95012 IRFR9220PbF IRFU9220PbF • Lead-Free www.irf.com 1 2/13/04 IRFR/IRFU9220PbF 2 www.irf.com IRFR/IRFU9220PbF www.irf.com 3 IRFR/IRFU9220PbF 4 www.irf.com IRFR/IRFU9220PbF www.irf.com 5 IRFR/IRFU9220PbF 6 www.irf.com IRFR/IRFU9220PbF D-Pak TO-252AA Package Outline

IRFR9220TRPBF

Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 200 RDS(on) () VGS = - 10 V 1.5 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single S DPAK

IRFR9220

Abstract: irfu9220 SiHFR9220 SiHFR9220-E3 SiHFU9220
Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 1.5 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single S DPAK (TO-252) IPAK (TO-251) • • • • • •

Contextual Info: 4055452 International D 01573b QMS • IN R K Rectifier IRFR9220 IRFU9220 HEXFET® P o w e r M O S F E T • • • • • • • PD-9.522D INTERNATIONAL Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9220 Straight Lead (IRFU9220)

EIA-541

Abstract: IRFR120 IRFU120 U120
Contextual Info: PD - 95029A IRFR9220PbF IRFU9220PbF • Lead-Free www.irf.com 1 1/10/05 IRFR/U9220PbF 2 www.irf.com IRFR/U9220PbF www.irf.com 3 IRFR/U9220PbF 4 www.irf.com IRFR/U9220PbF www.irf.com 5 IRFR/U9220PbF 6 www.irf.com IRFR/U9220PbF Peak Diode Recovery dv/dt Test Circuit

Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9220, SiHFR9220)

Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 200 RDS(on) () VGS = - 10 V 1.5 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single S DPAK

if9220

Abstract: TC227 irfu9220 IRFR9220
Contextual Info: IRFR9220, IRFU9220 S E M I C O N D U C T O R 3.6A, 200V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 3.6A, 200V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 1.500Ω • Temperature Compensating PSPICE Model

TC227

Abstract: irfu9220 IF9220 IRFR9220 TB334
Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching

SIHFR9220TR-GE3

Abstract: SIHFR9220TRL-GE3
Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9220, SiHFR9220)

IRFR9220

Abstract: IRFU9220 SiHFR9220 SiHFU9220 IRFR9220TRPBF
Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9220, SiHFR9220)

TC227

Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching

Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 1.5 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single S DPAK (TO-252) IPAK (TO-251) • • • • • •

95029 MARKING

Abstract: IRFR9220PBF
Contextual Info: PD - 95029 IRFR9220PbF IRFU9220PbF • Lead-Free www.irf.com 1 2/19/04 IRFR/U9220PbF 2 www.irf.com IRFR/U9220PbF www.irf.com 3 IRFR/U9220PbF 4 www.irf.com IRFR/U9220PbF www.irf.com 5 IRFR/U9220PbF 6 www.irf.com IRFR/U9220PbF D-Pak TO-252AA Package Outline

EIA-541

Abstract: IRFR120 IRFU120 U120 IRFR9220PBF
Contextual Info: PD - 95029A IRFR9220PbF IRFU9220PbF • Lead-Free Document Number: 91283 1/10/05 www.vishay.com 1 IRFR/U9220PbF Document Number: 91283 www.vishay.com 2 IRFR/U9220PbF Document Number: 91283 www.vishay.com 3 IRFR/U9220PbF Document Number: 91283 www.vishay.com

TC227

Contextual Info: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs

TC227

Abstract: TC1327 IF9220
Contextual Info: Hormis S IRFR9220, IRFU9220 S em icon du cto r y 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs September 1998 Description Features 3.6A, 200V r DS ON These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava­