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    TO252 PACKAGE Search Results

    TO252 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO252 PACKAGE Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-252 Package Intersil 2 LEAD SURFACE MOUNT JEDEC TO-252 PLASTIC PACKAGE (FOR RECTIFIERS ONLY) Original PDF
    TO-252 Package Intersil 16mm TAPE AND REEL Original PDF

    TO252 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TK73400AU3

    Abstract: tk73400 HSOP8 TK736XXAU3 3000mW TO252-5 HSOP-8
    Text: Io=1A bipolar LDO Regulator IC Io=1A バイポーラ低飽和レギュレータIC TK73400AU3 TK736XXAU3 TK736XXAME TO252-5 (TO252-5) (HSOP-8) DESCRIPTION The TK73400AU3 type, the TK736XXAU3 type and the TK736XXAME type are bipolar LDO Regulator ICs. It is packaged in TO252-5 and HSOP-8 which feature high


    Original     		PDF TK73400AU3 TK736XXAU3 TK736XXAME O252-5) TK73400AU3 TK736XXAU3 TK736XXAME O252-5 tk73400 HSOP8 3000mW TO252-5 HSOP-8

    sanken

    Abstract: ignitor 5A375 "Sanken Electric"
    Text: SANKEN ELECTRIC DGG4015 http://www.sanken-ele.co.jp Nov. 2011 Features Package ・Built-in zener Di between collector gate VCL typ. 400V TO252 ・Built-in gate protection diode ・SMD PKG TO252 ・Low saturated voltage VCE sat Max. 1.4V (at VGE=10V, IC=5A)


    Original     		PDF DGG4015 sanken ignitor 5A375 "Sanken Electric"

    "Sanken Rectifiers"

    Abstract: No abstract text available
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC DGG4015 Nov. 2011 Features Package Built-in zener Di between collector gate VCL typ. 400V TO252 Built-in gate protection diode SMD PKG TO252 Low saturated voltage VCE sat Max. 1.4V (at VGE=10V, IC=5A) Applications


    Original     		PDF DGG4015 "Sanken Rectifiers"

    Untitled

    Abstract: No abstract text available
    Text: SPD07N20 SPU07N20 Preliminary data SIPMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 200 V R DS on 0.4 Ω 7 A ID • Avalanche rated P-TO251 • dv/dt rated P-TO252 Type Package Ordering Code Packaging SPD07N20 P-TO252


    Original     		PDF SPD07N20 SPU07N20 P-TO251 P-TO252 Q67040-S4120-A2 Q67040-S4112-A2

    SPD35N10

    Abstract: 35n10 P-TO252 Q67042-S4125
    Text: SPD35N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature 100 VDS  N-Channel  Enhancement mode 175°C operating temperature V R DS on 44 m ID 35 A  Avalanche rated P-TO252  dv/dt rated Type SPD35N10 Package P-TO252 Ordering Code


    Original     		PDF SPD35N10 P-TO252 Q67042-S4125 35N10 SPD35N10 35n10 P-TO252 Q67042-S4125

    2N0623

    Abstract: S7420 ANPS071E BSPD30N06S2-23 SPD30N06S2-23
    Text: SPD30N06S2-23 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 23 m ID 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-23 P- TO252 -3-11 Q67060-S7420


    Original     		PDF SPD30N06S2-23 Q67060-S7420 2N0623 BSPD30N06S2-23, SPD30N06S2-23 2N0623 S7420 ANPS071E BSPD30N06S2-23

    PN06L13

    Abstract: No abstract text available
    Text: SPD50N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID  Logic Level V m 12.7 50 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421


    Original     		PDF SPD50N06S2L-13 SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, PN06L13

    2N0615

    Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
    Text: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature 55 VDS  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated RDS on ID V m 14.7 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-15 P- TO252 -3-11 Q67040-S4253


    Original     		PDF SPD30N06S2-15 Q67040-S4253 2N0615 BSPD30N06S2-15, SPD30N06S2-15 2N0615 ANPS071E BSPD30N06S2-15

    2n0680

    Abstract: g39 SMD BSPD14N06S2-80 SPD14N06S2-80
    Text: SPD14N06S2-80 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 80 m ID 17 A P- TO252 -3-11 Type Package Ordering Code SPD14N06S2-80 P- TO252 -3-11 Q67060-S7423


    Original     		PDF SPD14N06S2-80 Q67060-S7423 2N0680 BSPD14N06S2-80, SPD14N06S2-80 2n0680 g39 SMD BSPD14N06S2-80

    2N0623

    Abstract: INFINEON PART MARKING to252 2N062 smd diode marking G12
    Text: SPD30N06S2-23 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 23 m ID 30 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD30N06S2-23 Package Ordering Code P- TO252 -3-11 Q67060-S7420


    Original     		PDF SPD30N06S2-23 SPD30N06S2-23 Q67060-S7420 2N0623 BSPD30N06S2-23, 2N0623 INFINEON PART MARKING to252 2N062 smd diode marking G12

    2N0615

    Abstract: SPD30N06S2-15
    Text: SPD30N06S2-15 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature V m 14.7 30 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD30N06S2-15 Package Ordering Code P- TO252 -3-11 Q67040-S4253


    Original     		PDF SPD30N06S2-15 SPD30N06S2-15 Q67040-S4253 2N0615 BSPD30N06S2-15, 2N0615

    2N0640

    Abstract: BSPD25N06S2-40 SPD25N06S2-40 a6024
    Text: SPD25N06S2-40 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427


    Original     		PDF SPD25N06S2-40 Q67060-S7427 2N0640 BSPD25N06S2-40, SPD25N06S2-40 2N0640 BSPD25N06S2-40 a6024

    2N0822

    Abstract: SPD30N08S2-22
    Text: SPD30N08S2-22 OptiMOS =Power-Transistor Product Summary Feature 75 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature V m 21.5 30 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD30N08S2-22 Package Ordering Code P- TO252 -3-11 Q67060-S7413


    Original     		PDF SPD30N08S2-22 SPD30N08S2-22 Q67060-S7413 2N0822 BSPD30N08S2-22, 2N0822

    2n0680

    Abstract: BSPD14N06S2-80
    Text: SPD14N06S2-80 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 80 m ID 17 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD14N06S2-80 Package Ordering Code P- TO252 -3-11 Q67060-S7423


    Original     		PDF SPD14N06S2-80 SPD14N06S2-80 Q67060-S7423 2N0680 200Aay BSPD14N06S2-80, 2n0680 BSPD14N06S2-80

    PN06L13

    Abstract: PN06L 34Dg ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13 S7421
    Text: SPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • Logic Level V 12.7 mΩ 50 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421


    Original     		PDF SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, SPD50N06S2L-13 PN06L13 PN06L 34Dg ANPS071E BSPD50N06S2L-13 S7421

    2N0640

    Abstract: MAX408
    Text: SPD25N06S2-40 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 40 m ID 29 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427


    Original     		PDF SPD25N06S2-40 SPD25N06S2-40 Q67060-S7427 2N0640 BSPD25N06S2-40, 2N0640 MAX408

    TO252-5

    Abstract: No abstract text available
    Text: POWER&RF Io=1A bipolar LDO regulator IC Io=1A バイポーラ低飽和レギュレータIC TK73400AU3 TK736XXAU3 TK736XXAME TO252-5 (TO252-5) (HSOP-8) DESCRIPTION The TK73400AU3 type, the TK736XXAU3 type and the TK736XXAME type are bipolar LDO regulator ICs.


    Original     		PDF TK73400AU3 O252-5) TK736XXAU3 TK736XXAME TK73400AU3 TK736XXAU3 TK736XXAME O252-5 TO252-5

    pn0614

    Abstract: Q67060-S7418 smd diode 67A
    Text: SPD50N06S2-14 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature V m 14.4 50 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD50N06S2-14 Package Ordering Code P- TO252 -3-11 Q67060-S7418


    Original     		PDF SPD50N06S2-14 SPD50N06S2-14 Q67060-S7418 PN0614 BSPD50N06S2-14, pn0614 Q67060-S7418 smd diode 67A

    06n80c3

    Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
    Text: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		PDF SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS

    Untitled

    Abstract: No abstract text available
    Text: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		PDF SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3

    Untitled

    Abstract: No abstract text available
    Text: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		PDF SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3

    06n80c3

    Abstract: P-TO252 SPD06N80C3
    Text: SPD06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80c3 P-TO252 SPD06N80C3

    T0252

    Abstract: TO252-3LD TO252 TO-252 TO252-3L
    Text: Package Dimension TO252-3LD HTC


    OCR Scan     		PDF O252-3LD T0252 TO252-3LD TO252 TO-252 TO252-3L

    TO252

    Abstract: TO-252
    Text: Package Dimension TO252-5LD TO-252-5L PACKAGE OUTLINE DIMENSIONS HTC


    OCR Scan     		PDF O252-5LD TO252 TO-252