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    TO247 PACKAGE DISSIPATION Search Results

    TO247 PACKAGE DISSIPATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO247 PACKAGE DISSIPATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FCH020WT

    Abstract: TO220 HEATSINK DATASHEET SFV019WB SFV019NA Heatsinks TO247 package TO220 package CLIP-03 SVT030AC tag 231
    Text: HEATSINKS & MOUNTINGS TO218 & TO247 package HEATSINKS continued EAV series SFV041ST Compact, high power dissipation, vertical mounting extruded heatsinks with solderable fixing pins. Designed to accommodate a single TO218/TO247 package. Option of screw or clip mount with a choice of


    Original     		PDF SFV041ST O218/TO247 EAV025HC EAV031HC EAV038HC EAV050HC EAV063HC EAV025CL EAV031CL EAV038CL FCH020WT TO220 HEATSINK DATASHEET SFV019WB SFV019NA Heatsinks TO247 package TO220 package CLIP-03 SVT030AC tag 231

    6073b

    Abstract: TO220 HEATSINK DATASHEET Heatsinks Heatsinks TO247 TO218 package SW38-4 6098B 6390B PF723 KM150-1
    Text: HEATSINKS & MOUNTINGS HEATSINKS TO218 & TO247 package TO220 package continued 5900PB 30 max. 12.7 Vertical mounting twisted vane heatsink with rugged, solderable tags and a slotted hole to accommodate a single TO218/TO247 package. Black pre-anodised finish bare edges .


    Original     		PDF 5900PB O218/TO247 ISOWATT220 6296B, 6298B, 6299B, 6300B SVB030WT 6073b TO220 HEATSINK DATASHEET Heatsinks Heatsinks TO247 TO218 package SW38-4 6098B 6390B PF723 KM150-1

    6073B

    Abstract: PF751 6043PB 6390B 6391b TO220 HEATSINK DATASHEET 6296B 6022B 7136D ML26AA
    Text: HEATSINKS & MOUNTINGS HEATSINKS TO218 & TO247 package TO220 package continued 5900PB 30 max. 12.7 Vertical mounting twisted vane heatsink with rugged, solderable tags and a slotted hole to accommodate a single TO218/TO247 package. Black pre-anodised finish bare edges .


    Original     		PDF 5900PB O218/TO247 ISOWATT220 6296B, 6298B, 6299B, 6300B SVT030AC FCH020WT 6073B PF751 6043PB 6390B 6391b TO220 HEATSINK DATASHEET 6296B 6022B 7136D ML26AA

    11n80c3

    Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80
    Text: SPW11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type SPW11N80C3 Package P-TO247


    Original     		PDF SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 11n80c3 Q67040-S4440 11n80c SPW11N80C3 80011a 11n80

    Heatsinks TO247

    Abstract: TO218 package TO247 package dissipation TO247 package EAB025FH SVB030WT TOP3 package EAC038HC EAB038HC EXK200R
    Text: HEATSINKS & MOUNTINGS HEATSINKS SOT32/TO126 package TO218 & TO247 package Also covers DOP3 I , ISOWATT218, SOD93, SOT93, and TOP3(I) SVB030WT 30 max. 12.7 Twisted vane heatsink with integral fixing tags and a slotted hole designed to accommodate a single SOT32/TO126 package.


    Original     		PDF OT32/TO126 ISOWATT218, SVB030WT O218/TO247 EAB025NH EAC025HC EAC038HC EAC050HC Heatsinks TO247 TO218 package TO247 package dissipation TO247 package EAB025FH SVB030WT TOP3 package EAC038HC EAB038HC EXK200R

    TO247 package

    Abstract: TO247 package dissipation KD501 TO218 package BW38-4 Heatsinks TO247 TO220 HEATSINK DATASHEET KL50-1 SW63-2 AV17
    Text: HEATSINKS & MOUNTINGS TO202 package HEATSINKS KM series continued 6273B/PB 19.1 L High power dissipation, extruded heatsinks designed to accommodate one or more TO218/TO247 packages via a clip retaining feature clips available separately . Shaped to minimise


    Original     		PDF 6273B/PB O218/TO247 6273B 6273PB 100mm 150mm EAD063NN EAD063TH CLIP-04 EAN025BH TO247 package TO247 package dissipation KD501 TO218 package BW38-4 Heatsinks TO247 TO220 HEATSINK DATASHEET KL50-1 SW63-2 AV17

    diode 104

    Abstract: click 0819 SML5023BN
    Text: SEME SML5023BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC


    Original     		PDF SML5023BN diode 104 click 0819 SML5023BN

    B4015L

    Abstract: MBR4015LWT
    Text: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBR4015LWT r14525 MBR4015LWT/D B4015L MBR4015LWT

    B4015L

    Abstract: No abstract text available
    Text: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package Employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBR4015LWT MBR4015LWT/D B4015L

    SML5020BN

    Abstract: W112A
    Text: SEME SML5020BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC


    Original     		PDF SML5020BN 380mS SML5020BN W112A

    BFC45

    Abstract: No abstract text available
    Text: SEME BFC45 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		PDF BFC45 BFC45

    BFC50

    Abstract: BY 126 DIODE DYNAMIC RESISTANCE 1428-TR
    Text: SEME BFC50 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		PDF BFC50 BFC50 BY 126 DIODE DYNAMIC RESISTANCE 1428-TR

    "VDSS 800V" mosfet

    Abstract: BFC46
    Text: SEME BFC46 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		PDF BFC46 "VDSS 800V" mosfet BFC46

    MBR4015

    Abstract: MBR4015LWT MBR4015LWTG
    Text: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBR4015LWT MBR4015LWT/D MBR4015 MBR4015LWT MBR4015LWTG

    Untitled

    Abstract: No abstract text available
    Text: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance


    Original     		PDF ICE47N60W 250uA 187nC O-247 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    MBR4015LWT

    Abstract: MBR4015LWTG
    Text: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBR4015LWT MBR4015LWT/D MBR4015LWT MBR4015LWTG

    BFC42

    Abstract: No abstract text available
    Text: SEME BFC42 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		PDF BFC42 BFC42

    Untitled

    Abstract: No abstract text available
    Text: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBR4015LWT MBR4015LWT/D

    BFC51

    Abstract: W64A
    Text: SEME BFC51 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		PDF BFC51 BFC51 W64A

    BFC44

    Abstract: W52A
    Text: SEME BFC44 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		PDF BFC44 BFC44 W52A

    BFC40

    Abstract: Vdss 1500V
    Text: SEME BFC40 LAB N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49


    Original     		PDF BFC40 BFC40 Vdss 1500V

    Untitled

    Abstract: No abstract text available
    Text: SEME BFC40 LAB N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49


    Original     		PDF BFC40

    BFC48

    Abstract: No abstract text available
    Text: SEME BFC48 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		PDF BFC48 BFC48

    BFC52

    Abstract: No abstract text available
    Text: SEME BFC52 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		PDF BFC52 BFC52