F1S30P06
Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
Text: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM
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RFG30
RFP30P
RF1S30
P06SM)
O220AB,
O262AA,
O263AB)
RFG30P06,
RFP30P06,
F1S30P06
RF1S30P06
RF1S30P06SM
RFG30P06
RFP30P06
TB334
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diode 104
Abstract: click 0819 SML5023BN
Text: SEME SML5023BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC
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SML5023BN
diode 104
click 0819
SML5023BN
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B4015L
Abstract: MBR4015LWT
Text: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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MBR4015LWT
r14525
MBR4015LWT/D
B4015L
MBR4015LWT
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Untitled
Abstract: No abstract text available
Text: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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MBR4015LWT
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MBR4015LWT
Abstract: MBR4015LWTG
Text: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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MBR4015LWT
MBR4015LWT/D
MBR4015LWT
MBR4015LWTG
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PDF
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Untitled
Abstract: No abstract text available
Text: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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MBR4015LWT
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B4015L
Abstract: No abstract text available
Text: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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MBR4015LWT
MBR4015LWT
B4015L
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20n60cfd
Abstract: Q67040-S4617 SPW20N60CFD DSA003761 20N60CF
Text: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability
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SPW20N60CFD
P-TO247
Q67040-S4617
20N60CFD
20n60cfd
Q67040-S4617
SPW20N60CFD
DSA003761
20N60CF
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11N60CFD
Abstract: SPW11N60CFD 11N60C
Text: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability
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SPW11N60CFD
P-TO247
Q67040-S4619
11N60CFD
11N60CFD
SPW11N60CFD
11N60C
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100 watt resistors
Abstract: RCD TO220 HDP247
Text: POWER THICK FILM ON STEEL RESISTORS TO126, TO220, and TO247, 25 to 100 WATT HDP SERIES RoHS RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible FEATURES Industry’s most economical TO-style power resistors! Standard resistance range: 0.05Ω to 10KΩ
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24-hour
50ppm,
80ppm,
100ppm
FA047C
GF-061.
100 watt resistors
RCD TO220
HDP247
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transistor 20N60s5
Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
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SPW20N60S5
P-TO247
Q67040-S4238
20N60S5
transistor 20N60s5
20n60s5
SPW20N60S5 equivalent
SPW20N60S5
20n60s5 power transistor
20N60S5 TO247
20N60S
RESISTANCE VALUE 20N60S5
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K40T1202
Abstract: IGBT K40T1202 K40T120 IKW40N120 IKW40N120T2 PG-TO-247-3
Text: TrenchStop 2 Low Loss DuoPack : nd IKW40N120T2 Generation Series IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10 s
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IKW40N120T2
K40T1202
IGBT K40T1202
K40T120
IKW40N120
IKW40N120T2
PG-TO-247-3
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M106
Abstract: R010 RCD TO220
Text: POWER THICK FILM ON STEEL RESISTORS TO126, TO220, and TO247, 25 to 100 WATT HDP SERIES RoHS RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible FEATURES Industry’s most economical TO-style power resistors! Standard resistance range: 0.05Ω to 10KΩ
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24-hour
50ppm,
80ppm,
100ppm
FA047C
GF-061.
M106
R010
RCD TO220
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52n50c3
Abstract: SPW52N50C3
Text: SPW52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-247 VDS @ Tjmax 560 V RDS(on) 0.07 Ω ID 52 A • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated
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SPW52N50C3
O-247
PG-TO247
52N50C3
009-134-A
52n50c3
SPW52N50C3
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BUV48A
Abstract: TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-PWR/07/2362 Notification Date 03/19/2007 Package change from TO218 to TO247 for Power Bipolar products PWR - PWR BIP/ IGBT/ RF 1/14 PCN APM-PWR/07/2362 - Notification Date 03/19/2007 Table 1. Change Identification
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APM-PWR/07/2362
APM-PWR/07/2362
BUV48A
TIP35CW
failure report IGBT
B505
BDW83C
BU941ZP
TIP142
TIP2955
TIP34C
tip35
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47n60c3
Abstract: SPW47N60C3 SDP06S60 617 300
Text: SPW47N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60C3
P-TO247
Q67040-S4491
47N60C3
47n60c3
SPW47N60C3
SDP06S60
617 300
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11N80C3
Abstract: SPW11N80C3
Text: SPW11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package
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SPW11N80C3
P-TO247
Q67040-S4440
11N80C3
11N80C3
SPW11N80C3
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Untitled
Abstract: No abstract text available
Text: POWER THICK FILM ON STEEL RESISTORS TO126, TO220, and TO247, 25 to 100 WATT HDP SERIES RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible RoHS FEATURES Industry’s most economical TO-style power resistors! Standard resistance range: 0.05Ω to 10KΩ
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24-hour
50ppm,
80ppm,
100ppm
FA047C
GF-061.
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STW55NE10
Abstract: No abstract text available
Text: STW55NE10 N - CHANNEL 100V - 0.021Ω - 55A - TO247 STripFET POWER MOSFET TYPE STW55NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.027 Ω 55 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC
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STW55NE10
O-247
STW55NE10
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11N60S5
Abstract: SPW11N60S5 20TP
Text: SPW11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
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SPW11N60S5
P-TO247
Q67040-S4239
11N60S5
11N60S5
SPW11N60S5
20TP
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52n50c3
Abstract: s4615 SPW52N50C3
Text: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated
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SPW52N50C3
P-TO247
Q67040-S4615
52N50C3
52n50c3
s4615
SPW52N50C3
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17N80C3
Abstract: 17n80 SPW17N80C3
Text: SPW17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type
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SPW17N80C3
P-TO247
Q67040-S4359
17N80C3
17N80C3
17n80
SPW17N80C3
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47n60C3
Abstract: 47N60C SPW47N60C3 SDP06S60
Text: SPW47N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60C3
P-TO247
Q67040-S4491
47N60C3
47n60C3
47N60C
SPW47N60C3
SDP06S60
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07N60CFD
Abstract: JESD22 SPW07N60CFD
Text: SPW07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO247 • High peak current capability
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SPW07N60CFD
PG-TO247
07N60CFD
07N60CFD
JESD22
SPW07N60CFD
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