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    TO175 Price and Stock

    IXYS Corporation VTO175-16IO7

    RECT BRIDGE 3PH 1600V PWS-E-2
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    DigiKey VTO175-16IO7 Box
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    Testo Limited TESTO 175-H1

    Data Logger, Temp/Humidity, -20 To 55Deg; Data Logger Type:Temperature & Humidity; No. Of Channels:-; Reading Capacity:1000000; Product Range:-; Svhc:No Svhc (20-Jun-2016) Rohs Compliant: Yes |Testo TESTO 175-H1
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    Newark TESTO 175-H1 Bulk 73 1
    • 1 $652.51
    • 10 $601.76
    • 100 $560.67
    • 1000 $560.67
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    Testo Limited TESTO 175-T1

    Data Logger, Temp, -35 To 55 Deg; Data Logger Type:Temperature; No. Of Channels:-; Reading Capacity:1000000; Product Range:-; Svhc:No Svhc (20-Jun-2016) Rohs Compliant: Yes |Testo TESTO 175-T1
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    Newark TESTO 175-T1 Bulk 1 1
    • 1 $351.17
    • 10 $323.86
    • 100 $301.74
    • 1000 $301.74
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    Testo Limited TESTO 175-T2

    Data Logger, Temp, -35 To 55 Deg; Data Logger Type:Temperature; No. Of Channels:-; Reading Capacity:1000000; Product Range:-; Svhc:No Svhc (20-Jun-2016) Rohs Compliant: Yes |Testo TESTO 175-T2
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    Newark TESTO 175-T2 Bulk 1
    • 1 $383.88
    • 10 $351.96
    • 100 $326.11
    • 1000 $326.11
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    Testo Limited TESTO 175-T3

    Data Logger, Temp, -50 To +1000 Deg; Data Logger Type:Temperature; No. Of Channels:-; Reading Capacity:1000000; Product Range:-; Svhc:No Svhc (20-Jun-2016) Rohs Compliant: Yes |Testo TESTO 175-T3
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    Newark TESTO 175-T3 Bulk 1
    • 1 $491.16
    • 10 $452.96
    • 100 $422.03
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    TO175 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2782

    Abstract: NPN 2SC2782 transistor 2sc2782
    Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V


    Original     		PDF 2SC2782 2SC2782 to175 NPN 2SC2782 transistor 2sc2782

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Voltage Controlled Oscillator Wide Band ROS-1750W-619+ 950 to1750 MHz Features • low phase noise • low pulling • low pushing • aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 Applications + RoHS compliant in accordance


    Original     		PDF to1750 ROS-1750W-619+ CK605 2002/95/EC)

    ROS-1750W-619

    Abstract: No abstract text available
    Text: Surface Mount Voltage Controlled Oscillator Wide Band ROS-1750W-619+ 950 to1750 MHz Features • Low Phase Noise • Low Pulling • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 Applications + RoHS compliant in accordance


    Original     		PDF to1750 ROS-1750W-619+ CK605 2002/95/EC) 10KHz 100KHz ROS-1750W-619

    ROS-1750W-619

    Abstract: 1202-9 72 PL-012 012F4
    Text: Surface Mount Voltage Controlled Oscillator Wide Band ROS-1750W-619+ 950 to1750 MHz Features • Low phase noise • Low pulling • Low pushing • Aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 Applications + RoHS compliant in accordance


    Original     		PDF ROS-1750W-619+ to1750 CK605 2002/95/EC) ROS-1750W-619 1202-9 72 PL-012 012F4

    h2003

    Abstract: H2032 l2032 m2008 h2022 H2023 M2005 M2023 H2004 M2001
    Text: FULL SIZE D.I.L. M2001 thru M2007 L2001 thru L2007 M2021 thru M2023 L2021 thru L2023 M2031 thru M2033 L2031 thru L2033 VOLTAGE CONTROLLED OSCILLATORS HCMOS, 0° TO 70°C M2008 HALF SIZE D.I.L. H2001 thru H2007 H2021 thru H2023 H2031 thru H2033 Thru-Hole / Gull Wing, 5V


    Original     		PDF M2001 M2007 L2001 L2007 M2021 M2023 L2021 L2023 M2031 M2033 h2003 H2032 l2032 m2008 h2022 H2023 M2005 M2023 H2004

    ID84

    Abstract: 260uH LZP80N06P
    Text: LZP80N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge BVDSS=60V , • Wide Expanded Safe Operating Area RDS ON =0.014Ω, Application ID=84 A • DC Tools


    Original     		PDF LZP80N06P above25 to175 ID84 260uH LZP80N06P

    100V 60A Mosfet

    Abstract: mosfet 50v 30a LTP60N10
    Text: LTP60N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application • DC to DC converter • For high-frequency switching


    Original     		PDF LTP60N10 to175 100V 60A Mosfet mosfet 50v 30a LTP60N10

    Untitled

    Abstract: No abstract text available
    Text: SMALL SIGNAL SWITCHING DIODE YIGUANG 1SS133 1.Dimensions of outlines Unit: mm DO-35 2.Maximum Ratings TYPE NUMBER Symbols Reverse Voltage VR Peak Reverse Voltage VRM V 40 IO mA 110 IFSM A 0.5 Average rectified current, Half wave rectification with Resistive load at TA=25


    Original     		PDF 1SS133 DO-35 to175 100mA

    Untitled

    Abstract: No abstract text available
    Text: LZP50N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area BVDSS=60V , Application RDS ON =0.022Ω, • DC-DC Converters


    Original     		PDF LZP50N06P

    auto cut off schematic diagram 48v battery charge

    Abstract: thyristor battery charger 24v 100a LUCENT LINEAGE J85503B-2 J85503C3 L3 J85503C rectifier j85501a-2 mcs controller LUCENT LINEAGE 2000 J85503C3 Battery charger 48 volt forklift
    Text: Lineage 2000 200-Ampere, 60-Hertz Ferroresonant Rectifier J85503B-2 Product Manual Select Code 169-790-128 Comcode 107666356 Issue 8 January 1999 1999 Lucent Technologies Product Manual J85503B-2 Select Code 169-790-128 Comcode 107666356 Issue 8 January 1999


    Original     		PDF 200-Ampere, 60-Hertz J85503B-2 auto cut off schematic diagram 48v battery charge thyristor battery charger 24v 100a LUCENT LINEAGE J85503B-2 J85503C3 L3 J85503C rectifier j85501a-2 mcs controller LUCENT LINEAGE 2000 J85503C3 Battery charger 48 volt forklift

    30ETH06

    Abstract: 30ETH06-1 30ETH06S
    Text: Preliminary Data Sheet PD-20748 09/00 30ETH06 30ETH06S 30ETH06-1 Hyperfast Rectifier Features • • • • trr = 40ns IF AV = 30Amp VR = 600V Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature


    Original     		PDF PD-20748 30ETH06 30ETH06S 30ETH06-1 30Amp to175 30ETH06 30ETH06-1 30ETH06S

    Mosfet

    Abstract: SSPL7508
    Text: SSPL7508 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 6.25mohm(typ.) ID 120A ① TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and


    Original     		PDF SSPL7508 25mohm O-220 to175 Mosfet SSPL7508

    FDH5500

    Abstract: TB334
    Text: FDH5500 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features Applications „ Typ rDS on = 5.2mΩ at VGS = 10V, ID = 75A „ DC Linear Mode Control „ Typ Qg(10) = 118nC at VGS = 10V „ Solenoid and Motor Control „ Simulation Models „ Switching Regulators


    Original     		PDF FDH5500 118nC -TB334, FDH5500 TB334

    Diode Equivalent 1N4148

    Abstract: No abstract text available
    Text: SMALL SIGNAL SWITCHING DIODE YIGUANG 1N4148 1.Dimensions of outlines Unit: mm DO-35 2.Maximum Ratings TYPE NUMBER Symbols Reverse Voltage VR Peak Reverse Voltage VRM V 100 IO mA 100 IFSM A 0.5 Average rectified current, Half wave rectification with Resistive load at TA=25


    Original     		PDF 1N4148 DO-35 to175 Diode Equivalent 1N4148

    Mosfet

    Abstract: SSPL7509
    Text: SSPL7509 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 7.2mohm(typ.) ID 75A ① TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and


    Original     		PDF SSPL7509 O-220 to175 Mosfet SSPL7509

    Untitled

    Abstract: No abstract text available
    Text: THS4521-HT SBOS548C – APRIL 2011 – REVISED DECEMBER 2011 www.ti.com VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER Check for Samples: THS4521-HT FEATURES 1 • • • • • • • • • • • • Fully Differential Architecture


    Original     		PDF THS4521-HT SBOS548C

    20L30

    Abstract: 4OCPQ lm 2309 D-6380 TO-3P BAY40 8700-35 40CPQ40
    Text: PD-2.309 International 4ocpqoso riQR1Rectifier 40CPQ100 SCHOTTKY RECTIFIER 40 Amp Description/Features Major Ratings and Characteristics Characteristics 40CPQ. Units iF AV> Rectangular waveform 40 A 80/100 V lFSM @tp-5pssine 2950 A VF 0.61 V -55 to175 °C


    OCR Scan     		PDF 40CPQ100 40CPQ. to175 O-247 2F3-30-4 Lane03-09A, NJ07650. 20L30 4OCPQ lm 2309 D-6380 TO-3P BAY40 8700-35 40CPQ40

    Untitled

    Abstract: No abstract text available
    Text: 10 to15 Amp D ata Sheet SIN G LE PHASE SILICO N BRIDGE Description Mechanical Dimensions K < * o Features • BUILT-IN INTEGRAL HEAT SIN K ■ UP TO 300 AMP SURGE OVERLOAD RATING B ^ UL RECOGNITION AVAILABLE ■ SMALL PACKAGE Electrical Characteristics @25°C.


    OCR Scan     		PDF KBPSC10 KBPSC15 21X21X5 48X22X36cm 21X9X8 51X25X30cm

    A1567

    Abstract: NDB7060L NDP7060L transistor b35 A-1567
    Text: Na t i o n a I Semiconductor'“ June 1996 NDP7060L/ NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDP7060L/NDB7060L bS0113D A1567 NDB7060L NDP7060L transistor b35 A-1567

    25CC

    Abstract: TLC2801 TLC2801Y TLC2801Z TLC2801ZD TLC2801ZP
    Text: TLC2801Z, TLC2801Y Advanced LinCMOS LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS _ Low Input Noise Voltage: 35 nV/VRFMax at f = 10 Hz 15 nV/VRFMax at f = 1 kHz S L O S 1 1 6 A -J U L Y 1 9 9 2 -R E V IS E D AUG UST 1994 Low Input Bias Current:


    OCR Scan     		PDF TLC2801Z, TLC2801Y slos116a-july 1992-revised TheTLC2801 TLC2801 6Tbl72M 25CC TLC2801Z TLC2801ZD TLC2801ZP

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER L5 E D • 4Û5SM52 0017240 PD-2.330 International SRectifier SD241 SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Description/Features Characteristics SD241 Units lF AV Rectangular 60 A 35/45 V waveform V RRM The SD241 center tap Schottky rectifier has been optimized


    OCR Scan     		PDF 5SM52 SD241 SD241

    IRLZ44

    Abstract: 250M IRLZ30 IRLZ34 IRLZ40 004I1
    Text: N-CHANNEL LOGIC LEVEL MOSFET IRLZ44/40 FEATURES • • • • • • • • Lower R d s o n Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRLZ44/40 O-22O IRLZ44 IRLZ40 IRLZ34 IRLZ30 -Vos-30V Vpg-48V 002T4D5 250M 004I1

    475 50K 608

    Abstract: 1N5118 1b2 zener IN4978 1N5126 1N5135 IN4955 in4962 in4989 1N5120
    Text: 0135157 DDQOfln 0 2ÔE D SEM I CO N C O M P O N E N T S INC T-// - 15 ENER GLASS CASE 4,1 N5968, &1N5118 SERIES FEATURES: DESCRIPTION • Voidless Subminiature Glass Package Semicon’sglasszenerseriesfeatures high tempera­ ture metallurgical bonds and a fused glass passiva­


    OCR Scan     		PDF N4954 N5968, 1N5118 1n5134* 1m4996" 1n5135* 475 50K 608 1b2 zener IN4978 1N5126 1N5135 IN4955 in4962 in4989 1N5120

    IRFIZ34

    Abstract: IRFIZ30 diode ja8 IRFWZ30 IRFWZ34 JE-8 iz34
    Text: N-CHANNEL POWER MOSFETS IRFWZ34/30 IRFIZ34/30 FEATURES D’-PAK • L o w e r R ds <on • • • • • • Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area


    OCR Scan     		PDF IRFWZ34/30 IRFIZ34/30 IRFWZ34/IZ34 IRWZ30/IZ30 IRFWZ34 IRFIZ34 IRFWZ30 IRFIZ30 diode ja8 JE-8 iz34