P24N10
Abstract: PJP24N10
Text: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current
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PJP24N10
PJF24N10
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
P24N10
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p2n60
Abstract: f2n60 pjp2n60 n60p mosfet 600v 10a to-220ab diode marking GA PJF2N60 2A600VRDS
Text: PJP2N60 / PJF2N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS ON =4.6Ω@VGS=10V, ID=1A TO-220AB ITO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current
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PJP2N60
PJF2N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
p2n60
f2n60
n60p
mosfet 600v 10a to-220ab
diode marking GA
PJF2N60
2A600VRDS
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F5N60
Abstract: p5n60 PJF5N60 PJP5N60 5N60 M2020 n60p
Text: PJP5N60 / PJF5N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 5A , 600V, RDS ON =2.1Ω@VGS=10V, ID=2.5A • • • • • • TO-220AB ITO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP5N60
PJF5N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
F5N60
p5n60
PJF5N60
5N60
M2020
n60p
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DIODE P840
Abstract: F840
Text: PJP840 / PJF840 TO-220AB / ITO-220AB 500V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 500V, RDS ON =0.9Ω@VGS=10V, ID=4A • • • • • • TO-220AB ITO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP840
PJF840
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
DIODE P840
F840
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Untitled
Abstract: No abstract text available
Text: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current
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PJP24N10
PJF24N10
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
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F8N60
Abstract: p8n60 *p8n60 8n60 MOSFET 40A 600V PJF8N60
Text: PJP8N60 / PJF8N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, RDS ON =1.2Ω@VGS=10V, ID=4.0A • • • • • • TO-220AB ITO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP8N60
PJF8N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
F8N60
p8n60
*p8n60
8n60
MOSFET 40A 600V
PJF8N60
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P4N60
Abstract: F4N60
Text: PJP4N60 / PJF4N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 4A , 600V, RDS ON =2.4Ω@VGS=10V, ID=2.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP4N60
PJF4N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
P4N60
F4N60
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F7N65
Abstract: P7N65 7N65 m2828
Text: PJP7N65 / PJF7N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 650V, RDS ON =1.4Ω@VGS=10V, ID=3.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP7N65
PJF7N65
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
F7N65
P7N65
7N65
m2828
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F12N65
Abstract: P12N65 PJP12N65
Text: PJP12N65 / PJF12N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS ON =0.8Ω@VGS=10V, ID=6.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP12N65
PJF12N65
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
F12N65
P12N65
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P830
Abstract: f830
Text: PJP830 / PJF830 TO-220AB / ITO-220AB 500V N-Channel Enhancement Mode MOSFET FEATURES • 4.5A , 500V, RDS ON =1.5Ω@VGS=10V, ID=2.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP830
PJF830
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
P830
f830
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P10N60
Abstract: F10N60 10A600VRDS PJF10N60 PJP10N60
Text: PJP10N60 / PJF10N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS ON =1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP10N60
PJF10N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
P10N60
F10N60
10A600VRDS
PJF10N60
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p13n50
Abstract: F13N50 3N50 PJF13N50
Text: PJP13N50 / PJF13N50 TO-220AB / ITO-220AB 500V N-Channel Enhancement Mode MOSFET FEATURES • 13A , 500V, RDS ON =0.52Ω@VGS=10V, ID=6.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP13N50
PJF13N50
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
p13n50
F13N50
3N50
PJF13N50
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F730
Abstract: P730
Text: PJP730 / PJF730 TO-220AB / ITO-220AB 400V N-Channel Enhancement Mode MOSFET FEATURES • 5.5A , 400V, RDS ON =0.95Ω@VGS=10V, ID=3.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP730
PJF730
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
F730
P730
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F10N65
Abstract: P10N65
Text: PJP10N65 / PJF10N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS ON =1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP10N65
PJF10N65
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
F10N65
P10N65
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Untitled
Abstract: No abstract text available
Text: Outline Dimensions Vishay High Power Products TO-220AB, TO-220AB FULL-PAK DIMENSIONS FOR TO-220AB in millimeters and inches A 6 E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B
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O-220AB,
O-220AB
O-220AB
O-220
16-Nov-09
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95040
Abstract: No abstract text available
Text: Outline Dimensions Vishay Semiconductors TO-220AB, TO-220AB FULL-PAK DIMENSIONS FOR TO-220AB in millimeters and inches A 6 E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb
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O-220AB,
O-220AB
O-220AB
O-220
25-Oct-10
95040
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E78996 scr
Abstract: 16TTS 16TTS08FP 16TTS12FP 16T MARKING
Text: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for
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16TTS.
O-220AB
E78996
18-Jul-08
E78996 scr
16TTS
16TTS08FP
16TTS12FP
16T MARKING
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E78996 scr
Abstract: No abstract text available
Text: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for
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16TTS.
O-220AB
E78996
11-Mar-11
E78996 scr
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Untitled
Abstract: No abstract text available
Text: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for
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16TTS.
O-220AB
E78996
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for
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16TTS.
O-220AB
E78996
18-Jul-08
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PJP1N80
Abstract: No abstract text available
Text: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP1N80
PJU1N80
O-220AB/TO-251
O-220AB
IEC61249
2002/95/EC
O-220AB
O-251
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for
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16TTS.
O-220AB
E78996
11-Mar-11
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E78996 scr
Abstract: 16TTS12FP E78996 16TTS 16TTS08FP
Text: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for
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16TTS.
O-220AB
E78996
O-220AB
E78996 scr
16TTS12FP
E78996
16TTS
16TTS08FP
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E78996 scr
Abstract: No abstract text available
Text: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for
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16TTS.
O-220AB
E78996
12-Mar-07
E78996 scr
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