TO 252 DIMENSIONS Search Results

To-252-5

Abstract: TO252-5
Contextual Info: Packaging Information Mechanical Dimensions TO-252-5 Rev. 1.4 Aug 2006 Unit: mm inch www.bcdsemi.com 1 Packaging Information TO-252-5 Rev. 1.4 Aug 2006 www.bcdsemi.com 2

fdd 03 15 marking

Abstract: Multilayer metallized paper CBVK741B019 F63TNR FDD6680 FZ9935
Contextual Info: TO-252 DPAK Tape and Reel Data TO-252 (DPAK) Packaging Configuration: Figure 1.0 Packaging Description: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES Embossed ESD Marking N NTIO AT TE AUTIONS OBSE TO-252 parts are shipped in tape. The carrier tape is

6680

Abstract: FZ9935
Contextual Info: TO-252 Tape and Reel Data D-PAK TO-252 Packaging Configuration: Figure 1.0 Packaging Description: TO-252 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated

TO252

Abstract: TO-252
Contextual Info: Package Dimension TO252-5LD TO-252-5L PACKAGE OUTLINE DIMENSIONS HTC

DPak Package size

Abstract: DPak Package dimensions TO252-DPAK TO-252 D-PAK package TO252 TO-252 fairchild dpak Package dpak code
Contextual Info: TO-252 DPAK Package Dimensions TO-252 (DPAK) (FS PKG Code 36) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 2002 Fairchild Semiconductor Corporation May 2002, Rev. B1

TB304

Abstract: came
Contextual Info: Harris Semiconductor No. TB304 Harris Power February 1994 Advanced Power Package Construction Method Raises TO-252 Reliability To New Heights This technical backgrounder is intended to show how Harris redesigned the TO-252 surface-mount power package into

CHM25N15LPAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CHM25N15LPAGP CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small package. (TO-252)

TB304

Contextual Info: Advanced Power Package Construction Method Raises TO-252 Reliability To New Heights Technical Brief This technical backgrounder is intended to show how Intersil redesigned the TO-252 surface-mount power package into the most reliable package of its type in the industry.

CHM05N65PAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small flat package. D-PAK(TO-252)

TRANSISTOR SMD CODE 15

Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
Contextual Info: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:

3543

Contextual Info: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

d1 marking code dpak transistor

Abstract: MJD32CT4
Contextual Info: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

2SB1182

Contextual Info: 2SB1182 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage

2SA1700

Contextual Info: 2SA1700 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 High breakdown voltage Adoption of MBIT process Excellent hFE linearity TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO

300TYP

Abstract: CJ78M05 252-3L
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Encapsulate Three-terminal Voltage Regulator TO-252 CJ78M05 Three-terminal positive voltage regulator 1.INPUT 2. GND FEATURES 3. OUTPUT Maximum Output current IOM : 0.5 A １ ２ ３ Output voltage

TO-252-2L

Abstract: to2522l
Contextual Info: 2SD2118 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) Excellent DC current gain characteristics. TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: 2SD1760 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value

transistor 2sb1412

Abstract: 2SB1412
Contextual Info: 2SB1412 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage

transistor MJE3055

Abstract: MJE3055
Contextual Info: MJD3055 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 Designed for general purpose amplifier and low speed switching applications . Electrically simiar to MJE3055. TO-252-2L DC current gain specified to10 Amperes MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: 2SB1202 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

hfe60

Abstract: hFE transistor 200 hFE-60
Contextual Info: 2SC4003 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features hFE=60 to 200 High hFE low VCE(sat) VCE(sat)=0.6V TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

MJD122

Contextual Info: DC COMPONENTS CO., LTD. R MJD122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-252 DPAK Pinning .268(6.80) .252(6.40) 1 = Base

npn ie 4a

Abstract: TIP127 NPN Transistor 8A
Contextual Info: MJD127 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: MJD2955 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed Switching applications . Electrically simiar to MJD3055. TO-252-2L DC current gain specified to10 Amperes MAXIMUM RATINGS (TA=25℃ unless otherwise noted)