PM544
Abstract: ldpak PRSS0003AD-A PRSS0003AE-A PRSS0004AC-A PRSS0004AE-A PRSS0004AE-C TO220FM TO220CFM
Text: +2 -2 Packing form Non dry pack PRSS0004AC-A TO-220AB, TO-220ABV 50 PRSS0003AD-A TO-220FM, TO-220FMV 50 Non dry pack PRSS0003AE-A TO-220CFM, TO-220CFMV 50 Non dry pack PRSS0004AE-A LDPAK L , LDPAK(L)V 50 Non dry pack PRSS0004AE-B LDPAK(S)-(1), LDPAK(S)-(1)V
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Original
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PRSS0004AC-A
O-220FM,
O-220FMV
PRSS0003AE-A
O-220CFM,
O-220CFMV
PRSS0004AE-A
PRSS0004AE-B
PRSS0004AE-C
O-220AB,
PM544
ldpak
PRSS0003AD-A
PRSS0003AE-A
PRSS0004AC-A
PRSS0004AE-A
PRSS0004AE-C
TO220FM
TO220CFM
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PDF
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Untitled
Abstract: No abstract text available
Text: SSM2761F,I N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive avalanche rated BV D DSS 600V Fast switching R DS ON 1.0Ω Simple drive requirement I D 10A S TO-220FM(F) S TO-220CFM(I) G S Description The SSM2761 is specially designed as a main switching device
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Original
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SSM2761F
O-220FM
O-220CFM
SSM2761
265VAC
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PDF
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TO220CFM
Abstract: TO-220CFM to 220cfm PRSS0003AE-A
Text: Previous Code TO-220CFM / TO-220CFMV 1.0 ± 0.2 1.15 ± 0.2 0.6 ± 0.1 2.54 φ 3.2 ± 0.2 2.54 4.5 ± 0.3 2.7 ± 0.2 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.9g 2.5 ± 0.2 13.6 ± 1.0 RENESAS Code PRSS0003AE-A 12.0 ± 0.3 JEITA Package Code ⎯ 4.1 ± 0.3 Package Name
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Original
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O-220CFM
O-220CFMV
PRSS0003AE-A
O-220CFM
TO220CFM
TO-220CFM
to 220cfm
PRSS0003AE-A
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PDF
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Hitachi DSA002749
Abstract: No abstract text available
Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM
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Original
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2SK2114,
2SK2115
O-220CFM
2SK2114
2SK2115
D-85622
Hitachi DSA002749
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PDF
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Hitachi DSA002749
Abstract: No abstract text available
Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM
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Original
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2SK2116,
2SK2117
O-220CFM
2SK2116
2SK2117
D-85622
Hitachi DSA002749
|
PDF
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HITACHI DIODE
Abstract: 2SK1761 2SK1762 2SK2426 DSA003773
Text: 2SK2426 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
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Original
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2SK2426
O-220CFM
HITACHI DIODE
2SK1761
2SK1762
2SK2426
DSA003773
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PDF
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Untitled
Abstract: No abstract text available
Text: AP9575GI-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS Simple Drive Requirement RDS ON -60V 70m ID Fast Switching Characteristic RoHS Compliant & Halogen-Free G D S -16A TO-220CFM(I)
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Original
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AP9575GI-HF
O-220CFM
100us
100ms
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PDF
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK2426 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM
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Original
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2SK2426
O-220CFM
D-85622
Hitachi DSA001651
|
PDF
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK2423 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM
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Original
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2SK2423
O-220CFM
D-85622
Hitachi DSA001651
|
PDF
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Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK2425 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
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Original
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2SK2425
O-220CFM
D-85622
Hitachi DSA002780
|
PDF
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Hitachi DSA002781
Abstract: No abstract text available
Text: 2SK2423 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
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Original
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2SK2423
O-220CFM
D-85622
Hitachi DSA002781
|
PDF
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2sk1153
Abstract: dc-dc converter hitachi HITACHI DIODE 2SK1862 2SK2431 Hitachi DSA00396 HITACHI 2SK* TO-3
Text: 2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
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Original
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2SK2431
O-220CFM
2sk1153
dc-dc converter hitachi
HITACHI DIODE
2SK1862
2SK2431
Hitachi DSA00396
HITACHI 2SK* TO-3
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PDF
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*k2424
Abstract: 2SK2424 Hitachi DSA001651
Text: 2SK2424 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM
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Original
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2SK2424
O-220CFM
D-85622
*k2424
2SK2424
Hitachi DSA001651
|
PDF
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HITACHI DIODE
Abstract: 2SK1404 2SK2118 DSA003717 Hitachi DSA003717
Text: 2SK2118 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control Outline TO-220CFM
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Original
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2SK2118
O-220CFM
HITACHI DIODE
2SK1404
2SK2118
DSA003717
Hitachi DSA003717
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PDF
|
|
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Untitled
Abstract: No abstract text available
Text: AP18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance BVDSS -100V ▼ Simple Drive Requirement RDS ON 160mΩ ID ▼ Fast Switching Characteristic G D S -12A TO-220CFM(I) Description
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Original
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AP18P10GI
-100V
O-220CFM
100ms
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PDF
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Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
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Original
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2SK2431
O-220CFM
D-85622
Hitachi DSA002780
|
PDF
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Hitachi DSA002781
Abstract: No abstract text available
Text: 2SK2426 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
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Original
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2SK2426
O-220CFM
D-85622
Hitachi DSA002781
|
PDF
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK2425 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM
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Original
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2SK2425
O-220CFM
D-85622
Hitachi DSA001651
|
PDF
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HITACHI DIODE
Abstract: 2SK1159 2SK2423 Hitachi DSA00388
Text: 2SK2423 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12
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Original
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2SK2423
O-220CFM
HITACHI DIODE
2SK1159
2SK2423
Hitachi DSA00388
|
PDF
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18P10GI
Abstract: ap18p10gi 18P10G
Text: AP18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance BVDSS -100V ▼ Simple Drive Requirement RDS ON 160mΩ ▼ Fast Switching Characteristic ID G D S -12A TO-220CFM(I) Description
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Original
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AP18P10GI
-100V
O-220CFM
O-220CFM
18P10GI
18P10GI
ap18p10gi
18P10G
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PDF
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2SK2431
Abstract: Hitachi DSA001651
Text: 2SK2431 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM
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Original
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2SK2431
O-220CFM
D-85622
2SK2431
Hitachi DSA001651
|
PDF
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Hitachi DSA002749
Abstract: No abstract text available
Text: 2SK2144 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-220CFM
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Original
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2SK2144
O-220CFM
D-85622
Hitachi DSA002749
|
PDF
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AP18P10GI
Abstract: No abstract text available
Text: AP18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance BVDSS -100V ▼ Simple Drive Requirement RDS ON 160mΩ ▼ Fast Switching Characteristic ID G D S -12A TO-220CFM(I) Description
|
Original
|
AP18P10GI
-100V
O-220CFM
100ms
AP18P10GI
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PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline TO-220CFM
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OCR Scan
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2SK2114,
2SK2115
O-220CFM
2SK2114
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PDF
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