Untitled
Abstract: No abstract text available
Text: 18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D BVDSS -100V RDS ON Simple Drive Requirement 180m ID Fast Switching Characteristic G -12A S Description Advanced Power MOSFETs from APEC provide the
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AP18P10GH/J
-100V
O-252
AP18P10GJ)
O-251
O-251
18P10GJ
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PDF
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Untitled
Abstract: No abstract text available
Text: 18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS Simple Drive Requirement RDS ON -100V 160m ID Fast Switching Characteristic G D S -12A TO-220CFM(I) Description D Advanced Power MOSFETs from APEC provide the designer
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AP18P10GI
-100V
O-220CFM
O-220CFM
18P10GI
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18P10GH
Abstract: 18P10GJ AP18P10GH 18P10G
Text: 18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement BVDSS -100V RDS ON 180mΩ ID ▼ Fast Switching Characteristic G -12A S Description Advanced Power MOSFETs from APEC provide the
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Original
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AP18P10GH/J
-100V
O-252
AP18P10GJ)
O-251
O-251
18P10GJ
18P10GH
18P10GJ
AP18P10GH
18P10G
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PDF
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18P10GS
Abstract: AP18P10GS 18P10G
Text: 18P10GS RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -100V RDS ON 160mΩ ID G -12A S Description Advanced Power MOSFETs from APEC provide the designer with the
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Original
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AP18P10GS
-100V
O-263
O-263
18P10GS
18P10GS
AP18P10GS
18P10G
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PDF
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18P10GI
Abstract: ap18p10gi 18P10G
Text: 18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance BVDSS -100V ▼ Simple Drive Requirement RDS ON 160mΩ ▼ Fast Switching Characteristic ID G D S -12A TO-220CFM(I) Description
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Original
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AP18P10GI
-100V
O-220CFM
O-220CFM
18P10GI
18P10GI
ap18p10gi
18P10G
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. 18P10GS-HF-3 P-channel Enhancement-mode Power MOSFET D Simple Drive Requirement BV DSS Low Gate Charge RDS ON Fast Switching Performance G RoHS-compliant, halogen-free -100V 160mΩ ID -12A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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Original
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AP18P10GS-HF-3
-100V
AP18P10GS-HF-3
O-263
O-263
AP18P10
18P10GS
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PDF
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AP18P10GS
Abstract: 18P10G
Text: 18P10GS RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -100V RDS ON 160mΩ ID G -12A S Description The Advanced Power MOSFETs from APEC provide the designer with
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Original
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AP18P10GS
-100V
O-263
O-263
18P10GS
AP18P10GS
18P10G
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PDF
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Untitled
Abstract: No abstract text available
Text: 18P10GS RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D BVDSS -100V RDS ON Simple Drive Requirement ID Fast Switching Characteristic G 160m -12A S Description Advanced Power MOSFETs from APEC provide the designer with the
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Original
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AP18P10GS
-100V
O-263
O-263
18P10GS
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PDF
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