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    TO 106 TRANSISTOR BASE COLLECTOR EMITTER Search Results

    TO 106 TRANSISTOR BASE COLLECTOR EMITTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TO 106 TRANSISTOR BASE COLLECTOR EMITTER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 2N4248

    Abstract: 2N4248 2n4249
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage


    Original     		2N4248 2N4249 2N4250 2N4250A O-106 VCB-40V 2N4250A 100yA transistor 2N4248 2N4248 2n4249 PDF

    transistor 2N4248

    Abstract: 2N4250 2N4248 2n4249
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Col lector-Emitter Voltage Collector-Emftter Voltage


    Original     		2N4248 2N4249 2N4250 2N4250A O-106 20MHz 100KQ transistor 2N4248 2N4250 2N4248 2n4249 PDF

    NPN Transistor VCEO 80V 100V DARLINGTON IC 8A

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP100/101/102


    Original     		TIP105/106/107 O-220 TIP100/101/102 TIP105 TIP106 TIP107 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A PDF

    NPN Transistor 8A

    Abstract: TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107


    Original     		TIP100/101/102 O-220 TIP105/106/107 TIP100 TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor PDF

    TLP100

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP105/106/107


    OCR Scan     		TIP100/101/102 TIP105/106/107 TIP100 TIP101 TIP102 TLP100 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ V c e = -4V, |c= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP100/101/102


    OCR Scan     		TIP105/106/107 TIP100/101/102 TIP105 TIP106 TIP107 TIP107 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102


    OCR Scan     		TIP105/106/107 TIP106 TIP107 TIP105 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107


    OCR Scan     		TIP100/101/102 TIP101 TIP102 TIP100 PDF

    TIP105

    Abstract: TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 00/101/102


    OCR Scan     		TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107 TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON PDF

    TIP100

    Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107


    OCR Scan     		TIP100/101 TIP105/106/107 O-220 TIP100 TIP101 TIP102 900MA TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor PDF

    T1P110

    Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
    Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER


    OCR Scan     		TIP105/106/107 000772a TIP100/101/102 TIP105 TIP106 TIP107 T1P105 TIP115: T1P110 transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102 PDF

    B 773 transistor

    Abstract: ED1702N ED1702 TRANSISTOR ED-1702 ED1702L ED1702M ED1702 ed1802 transistor ed1702 ED1702 PHILIPS transistor
    Text: Philips Semiconductors Product specification NPN general purpose transistor ED1702 FEATURES PINNING • Low current max. 500 mA PIN • Low voltage (max. 25 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector • General purpose switching and amplification.


    OCR Scan     		ED1702 ED1802. 100AMETER ED1702K ED1702L ED1702M ED1702N ED17020 ED1702P ED1702Q B 773 transistor ED1702 TRANSISTOR ED-1702 ED1702 ed1802 transistor ed1702 ED1702 PHILIPS transistor PDF

    transistor ac 132

    Abstract: ED1802M 2813J J JB transistor ed1802 Transistor 774 774 to-92 transistor ed1802 ED-1702
    Text: Philips Semiconductors Product specification PNP general purpose transistor ED1802 FEATURES PINNING • Low current max. 500 mA PIN • Low voltage (max. 25 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector • General purpose switching and amplification.


    OCR Scan     		ED1802 ED1702. ED1802K ED1802L ED1802M ED1802N ED18020 ED1802P ED1802Q transistor ac 132 2813J J JB transistor ed1802 Transistor 774 774 to-92 transistor ed1802 ED-1702 PDF

    TIP 107

    Abstract: transistor tip 107 transistor t0-220 TO 106 transistor base collector emitter
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE=1000 @ V e e r -4V, lc= -3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS


    OCR Scan     		I05/106/107 T0-220 TIP100/101/102 TIP105 TIP106 TIP106 TIP107 -80mA TIP105/106/107 TIP 107 transistor tip 107 transistor t0-220 TO 106 transistor base collector emitter PDF

    transistor CR NPN

    Abstract: transistor cr marking FMY6 412 pnp transistor pnp transistor marking code 412 pnp transistor code 412 transistor CR pnp
    Text: FMY6 Transistor, dual, PNP and NPN Features Dimensions Units : mm available in SMT5 (FMT, SC-74A) package package marking: FMY6; Y6 FMY6 (SMT5) 2.9 l 0.2 1.9 ± 0.2 package contains an NPN (2SC2411K) and a PNP (2SA1036K) transistor with common emitters large collector current


    OCR Scan     		SC-74A) 2SC2411K) 2SA1036K) transistor CR NPN transistor cr marking FMY6 412 pnp transistor pnp transistor marking code 412 pnp transistor code 412 transistor CR pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors b b 5 3 ^ 3 1 DDE6TES 756 APX Product specification BLV13 VHF power transistor M AUER PHILIPS/DISCRETE QUICK REFERENCE DATA RF performance at T ^ = 25 °C in a common emitter test circuit. FEATURES • Gold metallization ensures excellent reliability.


    OCR Scan     		BLV13 bbS3131 MCD211 PDF

    mcd206

    Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
    Text: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead


    OCR Scan     		BLV13 OT123 PINNING-SOT123 MCD210 MBA451 MCD211 mcd206 philips Trimmer 60 pf BLV13 MCD211 C106W PDF

    TIP105

    Abstract: TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A
    Text: TIP105/106/107 TIP105/106/107 ◎ SEMIHOW REV.A0,Oct 2007 TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.


    Original     		TIP105/106/107 TIP100/101/102 TIP105 TIP106 TIP107 TIP105 TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A PDF

    Philips fr 153 30

    Abstract: BFQ135
    Text: Philips Components BFQ135 NPN 1 GHz WIDEBAND TRANSISTOR NPN transistor in a ceramic SOT172A2 package. It is prim arily intended for use in M ATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. Emitter ballasting resistors and application of gold sandwich metallization ensure an optimum


    OCR Scan     		OT172A2 Philips fr 153 30 BFQ135 PDF

    Tip 107 C

    Abstract: transistor tip 107 e 616 E616 IP107 tip 105 tip 107
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE= —4V, lc = - 3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS


    OCR Scan     		I05/106/107 TIP100/101/102 TIP107 TIP105/106/107 Tip 107 C transistor tip 107 e 616 E616 IP107 tip 105 tip 107 PDF

    POWER TRANSISTOR TO-220 CASE TIP100

    Abstract: RESISTORs full line TIP102 Darlington transistor
    Text: TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original     		TIP100/101/102 TIP105/106/107 O-220 TIP100 TIP101 TIP102 POWER TRANSISTOR TO-220 CASE TIP100 RESISTORs full line TIP102 Darlington transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original     		TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 05/106/107 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS


    OCR Scan     		TIP100/101/102 TIP105 TIP106 TIP107 PDF

    2SD1788

    Abstract: ITO-220 TP4L10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1788 Case : ITO-220 TP4L10 Unit : mm ± 4A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		2SD1788 ITO-220 TP4L10) 100mm 150mm 2SD1788 ITO-220 TP4L10 PDF