TNPN Search Results
TNPN Price and Stock
IoTize TNP-NSR103RS232/RS485-BLE FIELDBUS ADAPTER |
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TNP-NSR103 | Box | 4 | 1 |
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IoTize TnP-NSR103Multiprotocol Modules RS232/RS485 (Modbus)-BLE Adapter, NFC pairing |
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TnP-NSR103 | 7 |
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Adam Technologies Inc HFH-B-06-G-SMT-NP-NK-PP-T/RHeaders & Wire Housings FEMALE HEADER 1.27MM 2*3P SMT GOLD H=4.3MM NO PEG NO KEY CAP TR |
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HFH-B-06-G-SMT-NP-NK-PP-T/R |
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OMRON Corporation E3SCL2Photoelectric Sensors SENSOR |
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E3SCL2 | Each | 5 | 1 |
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Nexperia PBSS4140DPN,115Bipolar Transistors - BJT TRANS-SS NPN/PNP SOT457 40V |
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PBSS4140DPN,115 | Reel | 9,000 |
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TNPN Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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TNP-NSR103 | IoTize | RS232/RS485-BLE FIELDBUS ADAPTER | Original |
TNPN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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cc770
Abstract: 132-LDCC D6011 cc-575 Q24008
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AMCCQ24000 Q24000 cc770 132-LDCC D6011 cc-575 Q24008 | |
2EDL23N06
Abstract: trimble R8
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R-0603 R1206 R-0805 0R02/1W T-NPN-BC848A 2EDL23N06PJ 2EDL23N06 trimble R8 | |
Contextual Info: h a r r is S E M I C O N D U C T O R 2N7292D, 2N7292R 21^72Q2'H REGISTRATION PENDING Currently Available as FRF150 D, R, H September 1994 R a d ia tio n H a rd e n e d N -C h a n n e l P o w e r M O S F E T s Package Features • 25A, 100V, RDS(on) = 0.07Q |
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2N7292D, 2N7292R FRF150 100KRAD 300KRAD 1000KRAD 3000KRAD | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l | |
Contextual Info: TO SHIBA TLP630 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS GaAs IRED & PHOTO-TRANSISTOR TLP630 AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode connected inverse parallel in a six lead plastic DIP package. |
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TLP630 TLP630 5000Vrms UL1577 E67349 961001EBC2 16raA | |
Contextual Info: Sipepe SP674A Coiporat>on^ SIGNAL PROCESSING EXCELLENCE COMPLETE 12-BIT, 15/iSEC A /D CONVERTER WITH MP INTERFACE FEATURES *2 a i r s A m • Complete 12-bit A/D converter with samplehold, reference, clock, and three-state outputs ■ Low power dissipation: 150mW max |
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SP674A 12-BIT, 15/iSEC 12-bit 150mW 16-bit | |
Contextual Info: 4SE » ISOCOn COMPONENTS LTD • T ^ -Ì5 4flflb510 0000312 3 « I S O MOC 8080X 1 »ff ft,'Uiußib^k kCB » I‘4~>'■ / 'f W V ”> \ ■^ ^ « " V * - ! . p ^ ^ .: 1! ' . J|^à^p ^ p .». MffVI ■ SlP ?M OPTICALLY COUPLED ISOLATOR DARLINGTON TRANSISTOR OUTPUT |
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4flflb510 8080X 8080X | |
hy512260Contextual Info: • H Y U N D A I H Y 5 1 2 2 6 0 S e r ie s 128KX 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY512260 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access |
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128KX 16-bit HY512260 400mil 40pin 40/44pin 11-00-MAY95 | |
FT5778M
Abstract: T-43-25 pnp DARLINGTON TRANSISTOR ARRAY til 31a Fujitsu Silicon Darlington Transistor Array
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FT5778M 13-Pin lc/500 CC--30V FT5778M T-43-25 pnp DARLINGTON TRANSISTOR ARRAY til 31a Fujitsu Silicon Darlington Transistor Array | |
SAA 1251
Abstract: M193AB1 SAA1251 m193cb1 m193 M193C M193DB1 M193A 1251 saa TDA4431
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M193D 16-ELECTRONIC SAA 1251 M193AB1 SAA1251 m193cb1 m193 M193C M193DB1 M193A 1251 saa TDA4431 | |
tnpn
Abstract: Darlington 30A reliance dc motor MJ10021
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MJ10021 tnpn Darlington 30A reliance dc motor | |
ic tlo 741Contextual Info: BURR - BROW N [ OPA336 OPA2336 OPA4336 1 SINGLE-SUPPLY, McroPOWER CMOS OPERATIONAL AMPLIFIERS MicroAmpHfier* Series FEATURES DESCRIPTION • SINGLE SUPPLY OPERATION • RAIL-TO-RAIL OUTPUT (within 3mV • McroPOWER: lQ = 20|iA/Amplifier OPA336 series micropower CMOS operational ampli |
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OPA336 OPA2336 OPA4336 OPA336 ZZ337 17313b5 GD33b43 ic tlo 741 | |
Contextual Info: •HYUNDAI H Y 5 1 V 4 3 7 0 B S e r ie s 256K* 16-bit CMOS DRAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY51V4370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve |
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16-bit HY51V4370B 400mil 40pin 40/44pin 1AC24-00-MA DDD27M | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT U P D 421805 1 M-BIT DYNAMIC RAM 128K-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The /¿PD421805 is a 131,072 w ords by 8 bits CM OS dynam ic RAM with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation. |
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128K-WORD uPD421805 PD421805 28-pin uPD421805-25 iPD421805-30 iPD421805-35 | |
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WK16412
Abstract: wk16414 KT201 IRS 8342 WK16413 LQ470 LQ410 1PP75 KC639 KT728
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F-SO 84M
Abstract: z250h TIA 7705 7706M ss 7707
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16-Bit, 16-bit AD7707 F-SO 84M z250h TIA 7705 7706M ss 7707 | |
STRAIN GAUGE
Abstract: an3396 wheatstone bridge pressure sensor Wheatstone Bridge signal conditioning ICS for strain gauge full bridge strain gauge pressure sensor strain sensor strain gauge sensor bdr boost full bridge strain gage pressure sensor
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com/an3396 MAX1452: MAX1455: AN3396, APP3396, Appnote3396, STRAIN GAUGE an3396 wheatstone bridge pressure sensor Wheatstone Bridge signal conditioning ICS for strain gauge full bridge strain gauge pressure sensor strain sensor strain gauge sensor bdr boost full bridge strain gage pressure sensor | |
dwa 108 a
Abstract: E3NT-L37 dioda impulsowa semiconductors dwa 108 E3NT-L17 dioda LED e3nt dioda Silikon
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Contextual Info: W — M O K IW K f - T S E E TABLE 125 tom s M A X _ r _ V2SIKS MW C. Q87 U D i) MW n n n n& “"* 55 £& 121» SECTION A -A —^ *a A -aw . .Q M - rfl PREFERRED HOLE SIZE- OyB U C T ^ TP JK LP39"I>0<I1 OEPENOMG ON NUMBER CFPO SfTlO N S OF CONhECTDR FOR MORE |
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-L22L | |
Contextual Info: HM514410 Series- Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION HM514410JP Series The Hitachi HM514410 is a CMOS dynamic RAM organized 1,048,576 word x 4-bit. HM514410 has realized higher density, higher performance and various func |
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HM514410 576-Word HM514410JP 20-pin P-20D | |
Contextual Info: in te i' 51C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM 51C256L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C256L-15 150 0.1 51C256L-20 200 0.1 • Low Operating Current — 50 mA (max.) ■ Low Power Data Retention - Standby current, CHMOS — 100 |
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51C256L 51C256L-12 51C256L-15 51C256L-20 51C256L | |
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n T h e /x P D 4 2 6 4 4 0 0 ,4 2 6 5 4 0 0 a re 1 6 ,7 7 7 ,2 1 6 w o rd s by 4 b its d y n a m ic C M O S R A M s. T h e fa s t p a g e m o d e c a p a b ility |
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PD4264400, 040-o b427S2S GIIHI42 | |
C5F3
Abstract: K9940 HCT92 C5L4 C4-K r7a2 C7K9 c9d1 P609 c9h2
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44IRE 44TES LF959 HCT92 C5F3 K9940 C5L4 C4-K r7a2 C7K9 c9d1 P609 c9h2 | |
e3nt
Abstract: water level alarm using timer 555 applications E3NT-L37 E3NT-L17 sensor using 555 timer IEC 60947-5-2 IO LINK E3NT-L27 distance sensor with measuring range 30 m for triangulation sensor XS2F-D521-GG0-A
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NL-2132 e3nt water level alarm using timer 555 applications E3NT-L37 E3NT-L17 sensor using 555 timer IEC 60947-5-2 IO LINK E3NT-L27 distance sensor with measuring range 30 m for triangulation sensor XS2F-D521-GG0-A |