Untitled
Abstract: No abstract text available
Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4ĆBIT/2 097 152 BY 8ĆBIT/1 048 576 BY 16ĆBIT BY 4ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS695A − APRIL 1998 − REVISED JULY 1998 D Organization . . . D D D D D D D D D D D Pipeline Architecture Single-Cycle
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Original
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TMS664414,
TMS664814,
TMS664164
SMOS695A
x8/x16
125-MHz
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PDF
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TMS664164
Abstract: TMS664414 TMS664814
Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4ĆBIT/2 097 152 BY 8ĆBIT/1 048 576 BY 16ĆBIT BY 4ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS695A − APRIL 1998 − REVISED JULY 1998 D Organization . . . D D D D D D D D D D D Pipeline Architecture Single-Cycle
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Original
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TMS664414,
TMS664814,
TMS664164
16BIT
SMOS695A
x8/x16
125-MHz
TMS664164
TMS664414
TMS664814
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PDF
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PC100-compliant
Abstract: MT48LCxMxA2 mt48lc8m8b4 SDRAM MICRON micron x8 pc100 sdram mt48lc8m8b4tg-8e 54pin TSOP SDRAM
Text: 64Mb: x4, x8, x16 SDRAM ADDENDUM FOR B4 MT48LC16M4B4 -4 Meg x 4 x 4 banks MT48LC8M8B4 - 2 Meg x 8 x 4 banks MT48LC4M16B4 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM Refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html for the latest full-length data sheet this applies to.
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Original
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MT48LC16M4B4
MT48LC8M8B4
MT48LC4M16B4
PC100-compliant
MT48LCxMxA2
TMS66xx4
54-Pin
PC100.
PC100-based
TMS664xx4
PC100-compliant
SDRAM MICRON
micron x8 pc100 sdram
mt48lc8m8b4tg-8e
54pin TSOP SDRAM
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PDF
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TMS664164
Abstract: TMS664414 TMS664814
Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS695A – APRIL 1998 – REVISED JULY 1998 D D D D D D D D D D D D Organization . . . 1 048 576 x 16 Bits x 4 Banks
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Original
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TMS664414,
TMS664814,
TMS664164
16-BIT
SMOS695A
x8/x16
125-MHz
TMS664164
TMS664414
TMS664814
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PDF
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TMS664164
Abstract: TMS664414 TMS664814
Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS695A – APRIL 1998 – REVISED JULY 1998 D D D D D D D D D D D D Organization . . . 1 048 576 x 16 Bits x 4 Banks
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Original
|
TMS664414,
TMS664814,
TMS664164
16-BIT
SMOS695A
x8/x16
125-MHz
TMS664164
TMS664414
TMS664814
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS664414, TMS664814, TMS664164 64M-BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69Q - DECEMBER 1996 High-Speed, L ow -N o ise Low-Voltage x 16 x 4 B a n k s 2M x 8 x 4 B a n k s Transistor-Transistor Logic LVTTL 4M x 4 x 4 B a n k s Interface 3.3-V P o w e r S u p p l y ( ± 1 0 % Toler ance)
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OCR Scan
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TMS664414,
TMS664814,
TMS664164
64M-BIT
SMOS69Q
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PDF
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54pin TSOP SDRAM
Abstract: No abstract text available
Text: M il“ C a a iS J I 64Mb: x4, x8, x16 SDRAM ADDENDUM FOR B4 MT48LC16M4B4 -4 Meg x 4 x 4 banks MT48LC8M8B4 - 2 Meg x 8 x 4 banks MT48LC4M16B4 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM Refer to the Micron Web site: www.micron.com /m ti/msp/htmi/ datasheet.htm i for the latest full-length data sheet this applies to.
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OCR Scan
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MT48LC16M4B4
MT48LC8M8B4
MT48LC4M16B4
PC100-compliant
MT48LCxMxA2
TMS66xx4
54-Pin
PC100.
TMS664xx4
54pin TSOP SDRAM
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PDF
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CO2V
Abstract: No abstract text available
Text: TMS664814 TMS664164 2097152 BY 8-BIT BY 4-BANK, 1048576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES Organization. . . 1048576 x 16 Bits x 4 Banks 2097152 x 8 Bits x 4 Banks 3.3-V Power Supply ±10% Tolerance Four Banks for On-Chip Interleaving for
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OCR Scan
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TMS664814
TMS664164
16-BIT
SMOS69QA
TMS664xx4
67108864-bit
664xx4-10
TMS664814,
CO2V
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS664814, TMS664164 2097152 BY 8-BIT BY 4-BANK, 1048576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69QA-DECEMBER 1996 - REVISED NOVEMBER 1997 Organization . . . 1048 576 x 16 Bits x 4 Ban ks 2097152 x 8 Bits x 4 Banks Pipeline Architecture Single-Cycle
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OCR Scan
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TMS664814,
TMS664164
16-BIT
SMOS69QA-DECEMBER
x8/x16
100-MHz
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PDF
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