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    TMD1013 Search Results

    TMD1013 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TMD1013-1 Toshiba MICROWAVE POWER MMIC AMPLIFIER Scan PDF
    TMD1013-1 Toshiba Scan PDF
    TMD1013-1-431 Toshiba MICROWAVE POWER MMIC AMPLIFIER Original PDF

    TMD1013 Datasheets Context Search

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    TOSHIBA MICROWAVE AMPLIFIER

    Abstract: TMD1013-1-431 TOSHIBA TMD1013-1-431
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ High Power P1dB=33dBm TYP. „ High Power Added Efficiency ηadd=14%(TYP.) „ High Gain G1dB=25dB(TYP.) „ Operable Frequency : f=10.0-12.0GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25°


    Original     		PDF TMD1013-1-431 33dBm 000pF TOSHIBA MICROWAVE AMPLIFIER TMD1013-1-431 TOSHIBA TMD1013-1-431

    ADD14

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1 MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES n Suitable for Microwave Radio n High Power P1dB=33.0dBm TYP. n High Gain G1dB=25dB(TYP.) n High Power Added Efficiency ηadd=14%(TYP.) n Broadband Operation f=10.0 – 13.3GHz.


    Original     		PDF TMD1013-1 TMD1013-1 ADD14

    TMD1013-1

    Abstract: No abstract text available
    Text: 3.0 TMD10120CS TMD10121CS TMD10122CS TMD10123CS TMD10124CS TMD10125CS TMD10126CS TMD10127CS TMD10128CS TMD10129CS TMD10130CS TMD10131CS TMD10132CS TMD10133CS TMD10134CS TMD10135CS TMD10136CS SMT INDUCTOR DOP1916A TMD20014


    Original     		PDF TMD10120CS TMD10121CS TMD10122CS TMD10123CS TMD10124CS TMD10125CS TMD10126CS TMD10127CS TMD10128CS TMD10129CS TMD1013-1

    inductor 222

    Abstract: TMD10138CS DOP31
    Text: TMD10137CS DOP3115A-152 DOP3115A-222 TMD10138CS TMD10139CS TMD10140CS DOP3115A-332 DOP3115A-392 TMD10141CS DOP3115A-472 DOP3115A-602 TMD10142CS TMD10143CS DOP3115A-782 DOP3115A-103 1 TMD10144CS SMT INDUCTOR DOP3115A TMD20015


    Original     		PDF TMD10137CS DOP3115A-152 DOP3115A-222 TMD10138CS TMD10139CS TMD10140CS DOP3115A-332 DOP3115A-392 TMD10141CS DOP3115A-472 inductor 222 TMD10138CS DOP31

    TMD1013-1-431

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.0dBm at 9.5GHz to 12.0GHz n HIGH GAIN G1dB=25.0dB at 9.5GHz to 12.0GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS Ta= 25°C


    Original     		PDF TMD1013-1-431 000pF TMD1013-1-431

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


    Original     		PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


    Original     		PDF 2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293

    TGI8596-50

    Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
    Text: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4


    Original     		PDF MSE-2008 MSE-2009 TGI8596-50 TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL

    2sc5066

    Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs


    Original     		PDF SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136

    TMD1414-2

    Abstract: TGM9398-25 8596-50
    Text: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3


    Original     		PDF TPM2828-60â TPM1919-60 TPM2828-9â TMD0708-2 TMD0608-4 TMD7185-2 TMD5872-2 TMD1925-3 TMD1013-1-431 TMD0507-2A TMD1414-2 TGM9398-25 8596-50

    RFM70U12D

    Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
    Text: 東芝半導体製品総覧表 2010 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004O 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 RFM70U12D 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403

    TGI7785-120L

    Abstract: TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50
    Text: 東芝半導体製品総覧表 2011 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波ダイオード 小信号 MMIC 高周波セルパック マイクロ波半導体


    Original     		PDF SCJ0004R 2SC2714 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 MT3S03A MT3S04A MT3S106 TGI7785-120L TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T M D 1013- 1 MICRO WA VE SEMICONDUCTOR PRELIMINARY TECHNICAL DATA FEATURES High Power PldB=33dBm TYP. High Power Added Efficiency 77 High Gain add=14%(TYP.) GldB=25dB(TYP.) Broadband Operation f=10.0-13.3GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25It )


    OCR Scan     		PDF 33dBm TMD1013-1