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    TL252 Search Results

    TL252 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    LP3986TL-2525/NOPB Texas Instruments Dual Micropower 150 mA Ultra Low-Dropout CMOS Voltage Regulators in micro SMD Package 8-DSBGA Visit Texas Instruments Buy
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    TL252 Price and Stock

    Texas Instruments LP3986TL-2525-NOPB

    IC REG LINEAR 2.5V 150MA 8-DSBGA
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    DigiKey LP3986TL-2525-NOPB Digi-Reel 1,124 1
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    LP3986TL-2525-NOPB Cut Tape 1,124 1
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    LP3986TL-2525-NOPB Reel 1,000 250
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    Rochester Electronics LLC LP3986TL-2525-NOPB

    IC REG LINEAR 2.5V 150MA 8-DSBGA
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    Linrose Electronics SW19STL252

    SWITCH PB TAG LAT RING BL 12V
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    Essentra Components DTL2525-4-01

    CBL CLIP TWIST LOCK NATURAL
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    Essentra Components DTL2525-20-01

    CBL CLIP TWIST LOCK NATURAL
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    TL252 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TL2525A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TL2525AJ Texas Instruments Pulse Width Modulation Controllers Scan PDF
    TL2525AN Texas Instruments Pulse Width Modulation Controllers Scan PDF
    TL2527A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TL2527AJ Texas Instruments Pulse Width Modulation Controllers Scan PDF
    TL2527AN Texas Instruments Pulse Width Modulation Controllers Scan PDF

    TL252 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TL3526

    Abstract: TL3525A TL1527A a2724 SG1525A TL3525 sg1525 TL1525A TL2525A TL2527A
    Text: LINEAR INTEGRATED CIRCUITS TYPES TL1525A, TL1527A, TL2525A. TL2527A, TL3525A, TL3527A PULSE-WIDTH MODULATION CONTROLLERS □ 2 7 2 4 , APRIL 1 9 8 3 • Complete PW M Power Control Circuitry • 8-Volt to 35 -V o lt Operation • 5 .1 -Volt Reference Trimmed to ± 1 %


    OCR Scan
    TL1525A, TL1527A, TL2525A, TL2527A, TL3525A, TL3527A 35-Volt SGI525A/SG1527A TL1526A, TL1527A TL3526 TL3525A TL1527A a2724 SG1525A TL3525 sg1525 TL1525A TL2525A TL2527A PDF

    Untitled

    Abstract: No abstract text available
    Text: TL2525AN Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 400k UV Lockout (Y/N)Yes Soft Start (Y/N)Yes Output ConfigTotem-Pole Output Transistor Current (A)100m Output Transistor Voltage (V)35 Supply Voltage Minimum (V)8.0


    Original
    TL2525AN Code16-143 Pins16 NumberLN01600143 f100-500kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TL2527AJ Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 400k UV Lockout (Y/N)Yes Soft Start (Y/N)Yes Output ConfigTotem-Pole Output Transistor Current (A)100m Output Transistor Voltage (V)35 Supply Voltage Minimum (V)8.0


    Original
    TL2527AJ Code16-143 Pins16 NumberLN01600143 f100-500kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TL2525AJ Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 400k UV Lockout (Y/N)Yes Soft Start (Y/N)Yes Output ConfigTotem-Pole Output Transistor Current (A)100m Output Transistor Voltage (V)35 Supply Voltage Minimum (V)8.0


    Original
    TL2525AJ Code16-143 Pins16 NumberLN01600143 f100-500kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TL2527AN Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 400k UV Lockout (Y/N)Yes Soft Start (Y/N)Yes Output ConfigTotem-Pole Output Transistor Current (A)100m Output Transistor Voltage (V)35 Supply Voltage Minimum (V)8.0


    Original
    TL2527AN Code16-143 Pins16 NumberLN01600143 f100-500kHz PDF

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


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    PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147 PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original
    PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242 PDF

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original
    PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1 PDF

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original
    PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original
    PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's


    Original
    PTFC260202FC PTFC260202FC 10-watt H-37248-4 PDF

    transistor c124

    Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original
    PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's


    Original
    PTFC260202FC PTFC260202FC 10-watt H-37248-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's


    Original
    PTFC260202FC PTFC260202FC 10-watt H-37248-4 PDF

    PTFB093608

    Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original
    PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145 PDF

    TL272

    Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
    Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty


    Original
    PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O PDF

    TL244

    Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original
    PTVA035002EV PTVA035002EV H-36275-4 TL244 CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134 PDF

    TL250

    Abstract: TL239
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original
    PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239 PDF

    4871I

    Abstract: No abstract text available
    Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original
    PTFB213208SV PTFB213208SV 320-watt H-37275G-6/2 4871I PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original
    PTFB093608FV PTFB093608FV H-34275G-6/2 PDF

    TL306

    Abstract: TL184 TL167 TL307
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original
    PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 96stances. TL306 TL184 TL167 TL307 PDF

    TL239

    Abstract: TL140 TL230 Tl141 TL249 TL142 TL235 TL-141 tl144 tl241
    Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original
    PTFB213208SV PTFB213208SV 320-watt H-34275-6/2 TL239 TL140 TL230 Tl141 TL249 TL142 TL235 TL-141 tl144 tl241 PDF

    PTFB093608

    Abstract: 32c216 PTFB093608SV c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143
    Text: PTFB093608SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original
    PTFB093608SV PTFB093608SV H-34275G-6/2 PTFB093608 32c216 c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143 PDF

    TL256

    Abstract: TL160 TL247
    Text: PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output


    Original
    PTAB182002FC PTAB182002FC 190-watt H-37248-4 TL256 TL160 TL247 PDF