Thomas Betts DIN
Abstract: Thomas Betts DIN RAIL TKAD TK2D-48-AG 4TK2-48 SnapTrack thomas and betts ag
Text: Interface Modules SNAPTRACK CHANNEL DESCRIPTION SNAPTRACK® channel can be mounted on standard DIN rails or a series rail when used with TKAD. Rails not included. SNAPTRACK® channel is a nonconductive, rigid extruded PVC chassis used for mounting RDI
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LR49571
E60980
Thomas Betts DIN
Thomas Betts DIN RAIL
TKAD
TK2D-48-AG
4TK2-48
SnapTrack
thomas and betts ag
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TKAD20C
Abstract: TKAD 104462 Tektronix 464
Text: TEKTRONIX INC/ INTEGRATED OSE D | ñT0hl24 250 MSPS 8-bit A/D Converter with Track-and-Hold □□GD1DÛ 2 | TKAD20C Description Features The TKAD20C is a high speed, 8 bit, fully parallel Analog to Digital Converter with strobed comparators, latched outputs and
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T0hl24
TKAD20C
TKAD
104462
Tektronix 464
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TKAD10
Abstract: 104462
Text: TEKTRONIX INC / MELECS MbE J> WË fiTOblTS 0 0 0 0 2 3 7 3 • T E K N T-5I-ÍC-C8 500 MSPS 8-bit A/D Converter with Track-and-Hold TKAD10C Description Features The TKAD10 is a high speed, 8 bit, fully parallel Analog to Digital Converter with strobed comparators,
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TKAD10
2W-001
104462
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104462
Abstract: No abstract text available
Text: T E K T R O N I X INC/ M E LE CS MbE D • Ô^OblTS Q00QS53 1 ■ TEKtl T - 5 \ - i 0 ~ 0 % 250 MSPS 8-bit A/D Converter with Track-and-Hold TKAD20C Description Features The TKAD20C is a high speed, 8 bit, fully parallel Analog to Digital Converter with strobed comparators, latched outputs and
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Q00QS53
TKAD20C
104462
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Untitled
Abstract: No abstract text available
Text: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 SNAPTRACK CHANNEL D e s c r ip t io n SNAPTRACK Channel can be m ounted on standard DIN rails or A Series rail when used with TKAD. Rails not included. SNAPTRACK Channel is a nonconductive, rigid extruded PVC chassis used fo r m ounting socket
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3TK2D-48
6TK2-48
6TK2D-48
4TK2-48
LR49571
E58648
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GM71C4403CJ60
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features • 1,048,576 Words x 4 Bit Organization • Extended Data Out Mode Capability • Single Power Supply 5V ± 10% • Fast Access Time & Cycle Time The GM71C4403C is the new generation dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w o rd s x 4 b it.
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GM71C4403C
71C4403C
300mil
00055Qb
GM71C4403CJ60
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Untitled
Abstract: No abstract text available
Text: 78EE01PS 'ON 9NIMVMQ -fi-#m^ W 1 0 2 2 ~ y y r j\ / ) ( 5 / 4 M3 X 6 9 ( £ fa 2 — y 7 r ;i/ ) ( y 4 M3 8 s \ 'h 2 — y + T J 1/ ^ s / + M3 7 •0£'o' y h fa t 2 .c co t |->£ (i fa C co ih3& 0 D 0F -0 -212E (03 .O S ) . O m — y Jr ) 1/ >(s/ 4 1 2
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78EE01PS
-212E
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M69KB128AA
Abstract: BCR10
Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and
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M69KB128AA
104MHz
M69KB128AA
BCR10
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Untitled
Abstract: No abstract text available
Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and
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M69KB128AA
104MHz
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cr1 5 p26z
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
cr1 5 p26z
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BCR100
Abstract: No abstract text available
Text: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:
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128Mb/64Mb
09005aef81d721fb
pdf/09005aef81d72262
BCR100
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Untitled
Abstract: No abstract text available
Text: K1C3216B8E UtRAM2 32Mb 2M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C3216B8E
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Untitled
Abstract: No abstract text available
Text: K1C6416B2D UtRAM2 64Mb 4M x 16 bit UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C6416B2D
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7MBR20SA060
Abstract: Fuji PLC fbii 1251C tr aait
Text: M il «MMtoMr uÊué fai ih* mMutoc «trina purpMM wfchoi* iMMprw «»ritMn contati «I fu Ehculc Co. Ud Th« nuM'W «Ad ha inlotmcMin bw«Vi it ih* ixeptri/ Uni. o* <fWcl«Md «n *ny w»y whaMMM« fer Bx um at my fuÿflacrcQ i (.«JTneysUfliKfwUfwr mmadutMLcochà
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H04-004-07
H04-004-03
H04-004-03
7MBR20SA060
Fuji PLC
fbii
1251C
tr aait
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UtRAM Density
Abstract: D513
Text: Preliminary UtRAM2 K1C6416B8E 64Mb 4M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K1C6416B8E
UtRAM Density
D513
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Untitled
Abstract: No abstract text available
Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV UHJDUGLQJ WKH 6SDQVLRQ SURGXFW V GHVFULEHG KHUHLQ (DFK SURGXFW GHVFULEHG
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S71WS-N
S71WS-N
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Untitled
Abstract: No abstract text available
Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV UHJDUGLQJ WKH 6SDQVLRQ SURGXFW V GHVFULEHG KHUHLQ (DFK SURGXFW GHVFULEHG
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S71WS-N
S71WS-N
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The 555 Timer Applications Sourcebook
Abstract: hp 530 motherboard circuit and solution 16C854 hp laptop motherbaords 16750 UART AD128 4 CHANNEL QUAD CHANNEL 1000W POWER AMPLIFIER omnix N 200 ST hp 530 motherboard power supply solution uart 16c650
Text: Source ISO 9001 Formerly IN D U S T R IA L CO M PUTER SOURCE ICS Advent: Leading From Strength For over fifteen years, ICS Advent out of every one of our product has leveraged solid technical offerings. strengths, extensive applications Today, ICS Advent is a leading
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midtex relay
Abstract: agastat ssc 22 rdi 214bs AGASTAT RELAY Tyco Electronics MIDTEX 158 Flammability-UL94V-0 midtex relays RB1-AG 2-1437683-3 telco 64 pin connector RELAY SCHRACK 10A 250V
Text: BUCHANAN Terminal Blocks Note: All part numbers are RoHS Compliant. Table of Contents—Interface Module Systems Overview Catalog Numbering Code ………………………………………………………196 Interface Modules ………………………………………………………………………197-204
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Untitled
Abstract: No abstract text available
Text: GMM7401010CS/SG-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 WORDS x 40 BIT CMOS DYNAMIC RAM MODULE Features The GMM7401010CS/SG is an 1M x 40 bits Dynamic RAM MODULE which is assembled 10 pieces o f 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both
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GMM7401010CS/SG-60/70/80
GMM7401010CS/SG
GMM7401010CS/SG
GMM740101OCS
GMM740101fter
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SMD MARKING CODE A20
Abstract: ic DPD SCR FIR 3 D A22 SMD MARKING CODE A22 SMD CODE SCR IC CHIP smd transistor marking A11 smd code marking A8 diode smd diode code WP SMD MARKING CODE A12
Text: Data Sheet, V1.5, May 2005 HYE18P128160AF-9.6 HYE18P128160AF-12.5 HYE18P128160AF-15 S y n c h r o n o u s B u r s t C e l l u l a r R A M TM 1 . 5 G CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-5 Published by Infineon Technologies AG,
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HYE18P128160AF-9
HYE18P128160AF-12
HYE18P128160AF-15
0002H
0000B
0001B
0010B
0011B
00010B
SMD MARKING CODE A20
ic DPD
SCR FIR 3 D
A22 SMD MARKING CODE
A22 SMD CODE
SCR IC CHIP
smd transistor marking A11
smd code marking A8 diode
smd diode code WP
SMD MARKING CODE A12
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BCR100
Abstract: No abstract text available
Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc
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128Mb
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
BCR100
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Untitled
Abstract: No abstract text available
Text: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.70V–1.95V VCC 1.70V–3.30V VCCQ1
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MT45W4MW16BCGB
09005aef816fba98
09005aef816fbaa3
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DQ100
Abstract: transistor d514
Text: Rev. 1.0, Apr. 2010 K1C5616BKB 256Mb B-die UtRAM2 Multiplexed Synchronous Burst Uni-Transistor Random Access Memory. 16M x16bit datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K1C5616BKB
256Mb
x16bit)
DQ100
transistor d514
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