TK16 Search Results

Contextual Info: TK16N60W MOSFETs Silicon N-Channel MOS DTMOS TK16N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK16H60C Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 32 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.) z Low leakage current

TK16A60W

Abstract: TK16
Contextual Info: TK16A60W MOSFETs Silicon N-Channel MOS DTMOS TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK16A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK16A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by using Super Junction Structure : DTMOS

TK16102M

Abstract: TK16074M TK16104M TK16031AM TK1610 TK16103m analog delay line TK16105M delay line 100ns
Contextual Info: T O K O 46 INTEG R ATED CIRCUITS Delay Lines ICs ^ - u-i >ic fflitsj-i. TK16074M TK16101M TK1610DM Production equipment Video equipment Car radios 4 .5 -5 .5 MFP8 • • 4 .5 -5 .5 SOT23L-6 • • 4 .7 5 -5 .2 5 MFP14 MFP8 • • Circuits and functions

Contextual Info: TK16G60W5 MOSFETs Silicon N-Channel MOS DTMOS TK16G60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS

SC-65

Abstract: TK16J55D K16J55D
Contextual Info: TK16J55D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK16J55D 単位: mm ○ スイッチングレギュレータ用 20.0±0.3 2.0 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.5 S (標準) 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)

Contextual Info: TK16V60W MOSFETs Silicon N-Channel MOS DTMOS TK16V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK16G60W5 MOSFETs Silicon N-Channel MOS DTMOS TK16G60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS

tk1620

Contextual Info: r&TOKO TK16203 500 MHz RF AMPLIFIER FEATURES APPLICATIONS • 500 MHz Bandwidth ■ RF Communications ■ 5.0 dB Noise Figure ■ Telecommunications ■ 23 dB Insertion Gain ■ Local Area Networks ■ +4 dBm 1 dB Compression Point ■ Adaptive Impedance Matching Input and Output

Contextual Info: TK16C60W MOSFETs Silicon N-Channel MOS DTMOS TK16C60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK16A55D MOSFETs Silicon N-Channel MOS π-MOS TK16A55D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.28 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 9.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 550 V)

Contextual Info: TK16J60W MOSFETs Silicon N-Channel MOS DTMOS TK16J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK16G60W5 MOSFET シリコンNチャネルMOS形 DTMOS TK16G60W5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い: trr = 100 ns (標準) (2) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.18 Ω (標準)

Contextual Info: TK16V60W MOSFETs Silicon N-Channel MOS DTMOS TK16V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

TK16H60C

Contextual Info: TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK16H60C Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 32Ω (typ.) z High forward transfer admittance : |Yfs| = 11S (typ.) z Low leakage current

Contextual Info: TK16G60W MOSFETs Silicon N-Channel MOS DTMOS TK16G60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK16E60W MOSFETs Silicon N-Channel MOS DTMOS TK16E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK16A55D MOSFETs Silicon N-Channel MOS π-MOS TK16A55D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.28 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 9.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 550 V)

8082A

Abstract: TK1610
Contextual Info: r& T O K O TK16100 PROGRAMMABLE MONOLITHIC DELAY LINE FEATURES APPLICATIONS • Programmable Delay ■ Computer Hard Disk Drives ■ 3 bit TTL or CMOS Control ■ Memory Management ■ 15 MHz Max Operating Frequency ■ Digital Systems ■ 1.5 ns Rise/Fall Time

TK16H60C

Contextual Info: TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK16H60C Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 32Ω (typ.) High forward transfer admittance : |Yfs| = 11S (typ.) : IDSS = 100 µA (max) (VDS = 600 V)

Contextual Info: TK16G60W MOSFET シリコンNチャネルMOS形 DTMOS TK16G60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.16 Ω (標準) (2)

TK16J55

Contextual Info: TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK16J55D Switching Regulator Applications Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source voltage VGSS ±30 V 4.5 0.3 0.25 (Note 1) ID 16 Pulse (Note 1) IDP 64 Drain power dissipation (Tc = 25°C)

Contextual Info: TK16A60W MOSFETs Silicon N-Channel MOS DTMOS TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching