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    TIP105 DARLINGTON TRANSISTOR Search Results

    TIP105 DARLINGTON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TIP105 DARLINGTON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIP105

    Abstract: TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A
    Text: TIP105/106/107 TIP105/106/107 ◎ SEMIHOW REV.A0,Oct 2007 TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.


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    PDF TIP105/106/107 TIP100/101/102 TIP105 TIP106 TIP107 TIP105 TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A

    TIP107

    Abstract: IP105 tip106
    Text: TIP105 TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP105, TIP106 and TIP107 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in TO-220 plastic package intented for use in power linear


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    PDF TIP105 TIP106/TIP107 TIP105, TIP106 TIP107 O-220 O-220 IP105

    TIP105 Darlington transistor

    Abstract: TIP105 TIP106 TIP107 TIP107 central
    Text: Darlington Power Transistors PNP TIP105/106/107 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:


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    PDF TIP105/106/107 O-220 O-220, MIL-STD-202, TIP105 TIP106 TIP107 TIP105 Darlington transistor TIP105 TIP106 TIP107 TIP107 central

    TIP107

    Abstract: transistor tip105 TIP102 TIP105 TIP102 Darlington transistor
    Text: TIP102 TIP105 TIP107  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL


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    PDF TIP102 TIP105 TIP107 TIP102 O-220 TIP107. O-220 TIP107 transistor tip105 TIP102 Darlington transistor

    tip107

    Abstract: TIP102 morocco TIP102 PNP POWER TRANSISTOR TIP102 tip105 tip105 st TIP102 Darlington transistor st. tip105
    Text: TIP102 TIP105 TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT


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    PDF TIP102 TIP105 TIP107 O-220 TIP107. O-220 tip107 TIP102 morocco PNP POWER TRANSISTOR TIP102 tip105 st TIP102 Darlington transistor st. tip105

    TIP102

    Abstract: TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP100/101/102 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP105/106/107 APPLICATIONS


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    PDF TIP100/101/102 O-220C TIP105/106/107 TIP100 TIP101 TIP102 TIP102 TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn

    TIP105

    Abstract: TIP100 TIP102 TIP-106 IP106 TIP106 TIP107 IP107
    Text: TIP100/TIP102 TIP105/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL


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    PDF TIP100/TIP102 TIP105/TIP106/TIP107 TIP100 TIP102 O-220 TIP105 TIP107 TIP106 O-220 TIP-106 IP106 IP107

    TIP102

    Abstract: TIP105
    Text: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING


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    PDF TIP105 TIP105 O-220 TIP102. O-220 TIP102

    TIP105

    Abstract: TIP106 TIP107
    Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP105/106/107 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP100/101/102 APPLICATIONS


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    PDF TIP105/106/107 O-220C TIP100/101/102 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107

    Untitled

    Abstract: No abstract text available
    Text: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING


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    PDF TIP105 TIP105 O-220 TIP102. O-220

    TIP102

    Abstract: TIP105
    Text: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING


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    PDF TIP105 TIP105 O-220 TIP102. O-220 P011CI TIP102

    Untitled

    Abstract: No abstract text available
    Text: tSsml-donctuctoi {Pioduati., One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT . AUDIO POWER AMPLIFIER


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    PDF TIP105 TIP105 O-220 TIP102. O-220

    NPN Transistor VCEO 80V 100V DARLINGTON IC 8A

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP100/101/102


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    PDF TIP105/106/107 O-220 TIP100/101/102 TIP105 TIP106 TIP107 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A

    Untitled

    Abstract: No abstract text available
    Text: Darlington Power Transistors Part No. 2N6037 2N6038 2N6039 2N6034 2N6036 TIP100 TIP110 TIP120 TIP130 TIP101 TIP111 TIP121 TIP131 TIP102 TIP112 TIP122 TIP132 TIP105 TIP115 TIP125 TIP106 TIP116 TIP126 TIP107 TIP117 TIP127 Polarity NPN PNP NPN PNP VCEO IC Bipolar Transistors


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    PDF 2N6037 2N6038 2N6039 2N6034 2N6036 TIP100 TIP110 TIP120 TIP130 TIP101

    TIP107

    Abstract: TIP106 TIP105 TIP-106
    Text: TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage


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    PDF TIP105/TIP106/TIP107 TIP100/101/102 O-220 TIP105 TIP106 TIP107 TIP105/TIP106/TIP107 TIP107 TIP106 TIP105 TIP-106

    NPN Transistor 8A

    Abstract: TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107


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    PDF TIP100/101/102 O-220 TIP105/106/107 TIP100 TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor

    Untitled

    Abstract: No abstract text available
    Text: TIP105 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


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    PDF TIP105 time300n

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON TIP 100/TIP 102 RfflDOlñ!<s [l[L[ie,ü’[KÍ@RDD S$ TIP105/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE


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    PDF 100/TIP TIP105/TIP106/TIP107 TIP100 TIP102 T0-220 TIP105 TIP107 TIP106

    TLP100

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP105/106/107


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    PDF TIP100/101/102 TIP105/106/107 TIP100 TIP101 TIP102 TLP100

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ V c e = -4V, |c= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP100/101/102


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    PDF TIP105/106/107 TIP100/101/102 TIP105 TIP106 TIP107 TIP107

    Untitled

    Abstract: No abstract text available
    Text: TIP100/101/102 TIP105/106/107 SGS-THOMSON POWER DARLINGTONS DESCRIPTIO N The TIP100, TIP101 and TIP102 are silicon epi­ taxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package, intended for use in power linear and swit­


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    PDF TIP100/101/102 TIP105/106/107 TIP100, TIP101 TIP102 O-220 TIP105, TIP106 TIP107 100-T

    TIP105

    Abstract: TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 00/101/102


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    PDF TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107 TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102


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    PDF TIP105/106/107 TIP106 TIP107 TIP105

    p107 to-220

    Abstract: P102 P105 P107 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
    Text: @ S A N Y O SEMICONDUCTOR NPN TIP100 TIP101 TIP102 PNP TIP105 TIP106 TIP107 60-80-100 VOLTS, 8 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS HIGH CURRENT GAIN hFE = 4000 typ. @3V, 4A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @4A MONOLITHIC CONSTRUCTION WITH BUILT-IN


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    PDF TIP100 TIP105 TIP101 TIP106 TIP102 TIP107 tip100, tip105 tip101, tip106 p107 to-220 P102 P105 P107 TIP107