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    THROUGH HOLE TRANSISTOR 115 Search Results

    THROUGH HOLE TRANSISTOR 115 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    THROUGH HOLE TRANSISTOR 115 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BP 2818

    Abstract: transistor K D 2499 UM 7222 G transistor GaAs FET s parameters
    Text: EC4711 Wide Band Power FET GaAs Field Effect Transistor Description The EC4711 is a Ku band Schottky barrier Field Effect Transistor with 0.5µm Aluminium gate. Individual via hole connection is made between each source pad and the gold plated back face metallization, through the


    Original     		EC4711 EC4711 21dBm 23Ghz 18dBm 30GHz DSEC47117003 BP 2818 transistor K D 2499 UM 7222 G transistor GaAs FET s parameters PDF

    transistor sockets

    Abstract: transistor pin socket mil-m-14, 3pin transistor through 2211 9 PIN PC MOUNT TUBE SOCKET BE WALDES TRUARC
    Text: Sockets SERIES 22 TRANSISTOR SOCKET FEATURES • Sockets for JETEC Transistors and Similar Packaged Devices LAMP SOCKET FEATURES • Sockets for the Popular Sizes of Miniature Lamps • Secondary Use: Pencil Tube Socket DIMENSIONS Transistor Sockets In Inches and millimeters


    Original     		PDF

    293D

    Abstract: IEC825 TFDS4500 TFDT4500 TFDU4100
    Text: TFDH4130 Vishay Telefunken 2.7 V to 5.5 V Serial Infrared Transceiver SIR, 115.2 kbit/s Description TFDH4130 is a member of a family of SIR transceivers. The other family members are TFDU4100, TFDS4500 and TFDT4500. All are low-power infrared transceiver modules compliant to


    Original     		TFDH4130 TFDH4130 TFDU4100, TFDS4500 TFDT4500. TFDU4100) 18-Jul-08 293D IEC825 TFDT4500 TFDU4100 PDF

    Untitled

    Abstract: No abstract text available
    Text: TFDH4130 Vishay Telefunken 2.7 V to 5.5 V Serial Infrared Transceiver SIR, 115.2 kbit/s Description TFDH4130 is a member of a family of SIR transceivers. The other family members are TFDU4100, TFDS4500 and TFDT4500. All are low-power infrared transceiver modules compliant to


    Original     		TFDH4130 TFDH4130 TFDU4100, TFDS4500 TFDT4500. TFDU4100) 08-Apr-05 PDF

    light dark sensor circuit

    Abstract: reflector sensor datasheet E39-R1 E3S-CD62 LB 122 transistor To-92
    Text:  Clear Material Sensor E3S-CR67/62 Optimum Sensor for Detecting Transparent Glass and Plastic Bottles  Detects clear bottles reliably, even with “lens” effect  Narrow, precise beam for accurate sensing        Advanced optics for enhanced reliability


    Original     		E3S-CR67/62 E3S-CR67/62 /E39-R6 1-800-55-OMRON E268-E3-1 light dark sensor circuit reflector sensor datasheet E39-R1 E3S-CD62 LB 122 transistor To-92 PDF

    LM49830

    Abstract: 150w audio amplifier circuit diagram class AB 2sk1058 2SJ162 LME49830 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM lm4702 OUTPUT STAGE INFORMATION AN-1850 transistor 2sj162 450w power supply schematic diagram AN1645
    Text: National Semiconductor Application Note 1850 Troy Huebner John DeCelles July 1, 2008 Introduction validate the solution’s sonic performance in the desired test environment. The solution presented has undergone listening evaluations in a dedicated sound room for verification of sonic


    Original     		LME49830 EF125WT1 AN-1850 LM49830 150w audio amplifier circuit diagram class AB 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM lm4702 OUTPUT STAGE INFORMATION AN-1850 transistor 2sj162 450w power supply schematic diagram AN1645 PDF

    LM49830

    Abstract: Audio Power Amplifier MOSFET TOSHIBA high power fet audio amplifier schematic 300w power amplifier circuit diagram 150w audio amplifier circuit diagram class AB lm4702 OUTPUT STAGE INFORMATION lme49830 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 300w mosfet audio amplifier circuit diagram
    Text: National Semiconductor Application Note 1850 Troy Huebner John DeCelles December 2, 2008 Introduction validate the solution’s sonic performance in the desired test environment. The solution presented has undergone listening evaluations in a dedicated sound room for verification of sonic


    Original     		LME49830 EF125WT1 AN-1850 LM49830 Audio Power Amplifier MOSFET TOSHIBA high power fet audio amplifier schematic 300w power amplifier circuit diagram 150w audio amplifier circuit diagram class AB lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 300w mosfet audio amplifier circuit diagram PDF

    cmos transistor 0.35 um

    Abstract: UM207 ua 471 TRANSISTOR 641 nmos transistor 0.35 um 815 transistor 0.35Um 1P4M
    Text: 0.35um 1P4M Embedded Flat ROM 3.3V, 5.0V updated in 2005.04.05 Features ƒ Vdd Core/IO 3.3V/3.3V, 5V/5V ƒ Substrate P-type (100), Non-EPI ƒ Well Retrograde Twin Well (NW, PW) ƒ Isolation Conventional LOCOS ƒ Transistor Single-Gate CMOS Channel Surface channel NMOS, Buried channel PMOS


    Original     		PDF

    LME49830

    Abstract: an1850 150W TRANSISTOR AUDIO AMPLIFIER LM49830 AN-1850 SNAA058B
    Text: Application Report SNAA058B – July 2008 – Revised May 2013 AN-1850 LME49830TB Ultra-High Fidelity High Power Amplifier Reference Design .


    Original     		SNAA058B AN-1850 LME49830TB LME49830 an1850 150W TRANSISTOR AUDIO AMPLIFIER LM49830 SNAA058B PDF

    SOT23W-3

    Abstract: MS-018-AC tssop 38 footprint PLCC 44 pin through hole MO-220WGGC SOT23 MARK EW PUB26013 transistor crossreference DUAL ROW QFN leadframe MS-018AC
    Text: Product Information Allegro Package Designations This document provides reference information as an aid to differentiating the device package types used by Allegro MicroSystems. It provides cross references to the package designation, an Allegro code that is integrated into the device part number:


    Original     		PUB26013 SOT23W-3 MS-018-AC tssop 38 footprint PLCC 44 pin through hole MO-220WGGC SOT23 MARK EW transistor crossreference DUAL ROW QFN leadframe MS-018AC PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 27609.15† 3195 X PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 1 2 3 SUPPLY GROUND OUTPUT VCC LATCH Dwg. PH-013 Pinning is shown viewed from branded side. ABSOLUTE MAXIMUM RATINGS Supply Voltage, VCC 100 ms . 115 V*


    Original     		A3195­ MH-003E PDF

    PH-013

    Abstract: GH-040-2
    Text: Data Sheet 27609.15a 3195 X PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN VCC LATCH 3 OUTPUT 2 GROUND SUPPLY 1 Dwg. PH-013 Pinning is shown viewed from branded side. ABSOLUTE MAXIMUM RATINGS Supply Voltage, VCC 100 ms . 115 V*


    Original     		A3195­ MH-003E PH-013 GH-040-2 PDF

    A3195

    Abstract: A3195E A3195LU Gh004
    Text: 3195 X PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 1 2 3 SUPPLY GROUND OUTPUT VCC LATCH Dwg. PH-013 Pinning is shown viewed from branded side. ABSOLUTE MAXIMUM RATINGS ␣ Supply Voltage, VCC 100 ms . 115 V* (continuous) . 26 V


    Original     		PH-013 A3195 A3195E A3195LU Gh004 PDF

    C 12 PH Zener diode

    Abstract: driver ignition coil "battery protection" A102 TRANSISTOR C 12 PH diode LT HALL SENSOR Mil Std 883, Method 1008 hall current sensor 3A A3195 A3195E
    Text: 3195 X PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 1 2 3 SUPPLY GROUND OUTPUT VCC LATCH Dwg. PH-013 Pinning is shown viewed from branded side. ABSOLUTE MAXIMUM RATINGS Supply Voltage, VCC 100 ms . 115 V* (continuous) . 26 V


    Original     		PH-013 C 12 PH Zener diode driver ignition coil "battery protection" A102 TRANSISTOR C 12 PH diode LT HALL SENSOR Mil Std 883, Method 1008 hall current sensor 3A A3195 A3195E PDF

    SOT23W-3

    Abstract: transistor crossreference footprint soic 16 soic pcb footprint DFN 10 socket EK QFN MS-018AC qfn 44 PACKAGE footprint qsop 16 pcb footprint SOT23 MARK EW
    Text: Product Information Allegro Package Designations This document provides reference information as an aid to differentiating the device package types used by Allegro MicroSystems. It provides cross references to the package designation, an Allegro code that is integrated into the device part number:


    Original     		PUB26013 SOT23W-3 transistor crossreference footprint soic 16 soic pcb footprint DFN 10 socket EK QFN MS-018AC qfn 44 PACKAGE footprint qsop 16 pcb footprint SOT23 MARK EW PDF

    transistor C368

    Abstract: c368 transistor bc368 transistor number code book FREE MLE327
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC368 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 26 2003 Dec 01 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC368


    Original     		M3D186 BC368 BC368 SCA75 R75/04/pp9 transistor C368 c368 transistor transistor number code book FREE MLE327 PDF

    transistor C368

    Abstract: BC368 c368 transistor npn, transistor, sc 103 b c368 MLE327 bc368 equivalent BC369 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC368 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 2003 Dec 01 2004 Nov 05 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC368


    Original     		M3D186 BC368 SCA76 R75/05/pp9 transistor C368 BC368 c368 transistor npn, transistor, sc 103 b c368 MLE327 bc368 equivalent BC369 SC-43A PDF

    C36916

    Abstract: transistor C369 c3691 C36925 BC369 C3692 C369 transistor MLE295
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC369 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 26 2003 Nov 20 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC369


    Original     		M3D186 BC369 BC369-16 BC369-25 SC-43 C36916 C36925 transistor C369 c3691 C3692 C369 transistor MLE295 PDF

    ON1120

    Abstract: ON1112 59 ON2179 CNZ1120 VISIBLE LIGHT PHOTOdarlington TRANSISTOR ON3171 ON1387 ON1113 reflective photocoupler CNA1006N
    Text: Characteristics List • Photocoupler ■ Hologram Unit 17 Photocoupler ■ Photointerrupter Absolute Maximum Ratings Electro • Optical Characteristics Ta = 25°C Part No. IF mA VCEO (V) IF (mA) CNA1006N IC min. (mA) ICEO max. (µA) t r , tf typ. (µs)


    Original     		CNA1007H CNA1006N CNA1009H ON1024) CNA1011K ON1113) CNZ3132 ON3132) CNZ3133 ON3133) ON1120 ON1112 59 ON2179 CNZ1120 VISIBLE LIGHT PHOTOdarlington TRANSISTOR ON3171 ON1387 ON1113 reflective photocoupler CNA1006N PDF

    T2850D

    Abstract: E6676 T2850D triac
    Text: Issued July 1986 E6676 Thermal sensors Stocknumbers 307-929, 307-935 Two solid state thermal sensors, having very sensitive active areas of metal oxide material produced by thin film techniques. They exhibit a high negative temperature coefficient of resistance within a narrow


    Original     		E6676 100kW T2850D. T2850D E6676 T2850D triac PDF

    C3691

    Abstract: C36916 C3692 C36925 C369 transistor BC369 transistor C369 BC369-25 C369 marking code 43a
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC369 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2003 Nov 20 2004 Nov 05 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC369


    Original     		M3D186 BC369 BC369-16 SCA76 R75/05/pp12 C3691 C36916 C3692 C36925 C369 transistor BC369 transistor C369 BC369-25 C369 marking code 43a PDF

    transistor C368

    Abstract: c368 transistor bc368 equivalent c368 high gain low capacitance NPN transistor marking code 43a BC368 BC369 SC-43A MLE327
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC368 NPN medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 01 2004 Nov 05 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC368 FEATURES


    Original     		M3D186 BC368 R75/05/pp9 transistor C368 c368 transistor bc368 equivalent c368 high gain low capacitance NPN transistor marking code 43a BC368 BC369 SC-43A MLE327 PDF

    C3691

    Abstract: C3692 C36916 C369 transistor C36925 transistor C369 C369 BC369 marking code 43a bc369 equivalent
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC369 PNP medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Nov 20 2004 Nov 05 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 FEATURES


    Original     		M3D186 BC369 BC369-16 250tion R75/05/pp12 C3691 C3692 C36916 C369 transistor C36925 transistor C369 C369 BC369 marking code 43a bc369 equivalent PDF

    T2850D

    Abstract: 554311 T018 TIP41A Triac based temperature control circuit
    Text: Issued March 1997 232-2841 Data Pack E Thermal sensors Data Sheet RS stock numbers 307-929, 307-935 Two solid state thermal sensors, having very sensitive active areas of metal oxide material produced by thin film techniques. They exhibit a high negative temperature coefficient of resistance within a narrow


    Original     		PDF