THOMSON RF POWER TRANSISTOR Search Results

Contextual Info: ¿57 SGS-THOMSON Rf¡lD E[3 i[LiOT[3(s iD(Ei 2N5883/2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . 2N5884, 2N5885 AND 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5885 and 2N5886 are silicon epitaxial-base NPN power transistor in Jedec

transistor j304

Abstract: thomson microwave transistor
Contextual Info: S G S— THOMSON OSC D | 7 = ^ 2 3 ? OüGQlt.0 7 | ~ 0 T ~ ? 3 ' ûj SOLID STATE MICROWAVE SD1012-3 RF 2128 THOMSON-CSF COMPONENTS CORPORATiON Montgomeryville, P A 18936 • ¡215) 362-8500 ■ TWX 510-661-7299 6 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION

SD2904

Abstract: SD2921 SD2922 SD4013 M113 SD2900 SD2902 SD2903
Contextual Info: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &

RF power transistors cross reference

Abstract: SD1470 M176 SD2903 uhf transistors
Contextual Info: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &

l237

Contextual Info: f Z J SCS-THOMSON SD1658 *>7 #. GÄMIlUIOTMIKgi RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS • . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHED DESIGNED FOR HIGH POWER LINEAR OPERATION . HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION

SK9610

Abstract: SK9605 SK9606 SK9604 T-038 T-068 SK9611 SK9618 THOMSON 58E SK9603
Contextual Info: THOMSON/ DISTRIBUTOR BIPOLAR TRANSISTORS SflE D • T05ba?3 0004041 3flQ ■ TCSK . goni Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Materia! Application complementary device type SK9603 NPN/Si HF RF Power Amp:lndust./Comm./Amateur Device

Contextual Info: / T T SGS-THOMSON ^ 7#• noM & E gM K S STM901-30 RF POWER MODULE LINEAR BASE STATION APPLICATIONS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: / = 7 SGS-THOMSON SD1542 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS . 600 WATTS typ. IFF 1030/1090 MHz • 550 WATTS (min.) DME 1025 - 1150 MHz . 5.6 dB MIN. GAIN ■ REFRACTORY GOLD METALLIZATION

5q 1265 rf

Abstract: DIODE aay 49
Contextual Info: SGS-THOMSON 5 7 . SD1492 m RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS • ■ i ■ ■ . ■ . ■ 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

Contextual Info: 57. SGS-THOMSON SD4017 •m RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION P o u t = 30 W MIN. WITH 7.5 dB GAIN

L9110

Abstract: DIODE aay 49
Contextual Info: /T T SGS-THOMSON ^7# SD1492 RF & MICROWAVE TRANSISTO RS _ TV/LINEAR APPLICATIONS • . ■ . . ■ . ■ . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS

Contextual Info: SGS-THOMSON SD2903 MMMIlLIlMMSiDÊS RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS P R E L IM IN A R Y D A T A 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB DESCRIPTION The SD2903 is a gold metallized N-channel MOS field effect RF power transistor. The SD2903 is

d1536

Abstract: TRANSISTOR 8019 SD1536-08 TACAN transistor
Contextual Info: SGS-THOMSON S D 15 3 6 -0 8 iy RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS . 100 WATTS typ. IFF 1030 - 1090 MHz . 90 WATTS (min.) DME 1025 - 1150 MHz i 90 WATTS (typ.) TACAN 960 - 1215 MHz

Contextual Info: SGS-THOMSON DRÜDfg S D 1 5 4 2 -0 4 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF • 600 WATTS min. IFF 1030/1090 MHz ■ REFRACTORY GOLD METALLIZATION . 6.0 dB MIN. GAIN ■ BALLASTING AND LOW THERMAL REISTANCE FOR RELIABILITY AND

Contextual Info: SGS-THOMSON S D 1 5 3 0 -0 8 iE J lÊ ÏÏIM lM RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 40 WATTS typ. IFF 1030 - 1090 MHz 35 WATTS (min.) DME 1025 - 1150 MHz 25 WATTS (typ.) TACAN 960 - 1215 MHz

Contextual Info: HZJ SCS-THOMSON ^ 7 /. M g [ ^ » i C T [ i » [ ] ( g § _S D 1 5 4 0 - 0 8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 350 WATTS (typ. IFF 1030 - 1090 MHz . 300 WATTS (min.) DME 1025 - 1150 MHz

Contextual Info: SCS-THOMSON IMEWilLiMOiD STM961-15 RF POWER MODULE DIGITAL CELLULAR APPLICATIONS . • . . LINEAR POWER AM PLIFIER 915-960 MHz 26 VOLTS INPUT/OUTPUT 50 OHMS ■ P o u t = 42 dBm CW or P E P . GAIN = 30 dB PIN CONNECTION DESCRIPTION The STM961 -15 module is designed for digital

UJ300

Abstract: DFCA
Contextual Info: /^ 37 /T SGS-THOMSON R SD1542-42 RF & MICROWAVE TRANSISTO RS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF ■ 600 WATTS min. IFF 1030 or 1 090 MHz ■ REFRACTORY GOLD METALLIZATION . 6.0 dB MIN. GAIN ■ LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS

1538-08

Contextual Info: /T T SGS-THOMSON ^ 7 # S D 1 5 3 8 -0 8 RF & MICROWAVE TRANSISTO RS _ AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSE IFF, DME, AND TACAN APPLICATIONS ■ 200 W typ. IFF 1030 - 1090 MHz ■ 150 W (min.) DME 1025 - 1150 MHz

ic tea 1090

Abstract: M/ic rca 645 TEA 1090
Contextual Info: SGS-THOMSON 5 7 . MD@Bi ilLim©ISID©i SD 1542-42 RF & MICROWAVE TR AN SISTO R S AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF • 600 WATTS min. IFF 1030 or 1090 MHz . REFRACTORY GOLD METALLIZATION ■ 6.0 dB MIN. GAIN . LOW THERMAL RESISTANCE FOR

Contextual Info: /IT SCS-THOMSON SD1390 * 7 # . raoœoiiUKSïiBOWs RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS PRELIMINARY DATA • ■ . ■ • ■ 470 MHZ 24 VOLTS P o u t = 1.5 W WITH 13.0 dB MIN. GAIN CLASS A COMMON EMITTER POWER SATURATION 2.2 W MIN. P IN C O N N E C T IO N

Contextual Info: SGS-THOMSON S D 1 5 3 4 -0 1 RF & MICROW AVE TRANSISTO RS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 80 WATTS typ. IFF 1030 - 1090 MHz 75 WATTS (min.) DME 1025 - 1150 MHz 50 WATTS (typ.) TACAN 960 - 1215 MHz 8.0 dB MIN. GAIN

403 Z t capacitor

Abstract: S8830
Contextual Info: f Z 7 SGS-THOMSON SD1459 ^ 7#. K M « « ® « ! RF & MICROWAVE TRANSISTO RS TV/LINEAR APPLICATIONS • . ■ . ■ . 170 - 230 MHz 28 VOLTS COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS . P out = 20 W MIN. WITH 7.5 dB GAIN

IRF 260 N

Abstract: transistor IRF 531 transistor 531 IRF 530 ISOWATT-220 IRF530FI ISOWATT220 IRF530 530FI IRF532
Contextual Info: 1 SGS-THOMSON 3QE D 7^237 0 02 ^77 3 S -TH O M S O N • • • • • "'P '3 > °ì~ \1 [RF 530/FI-531/FI IRF 532/FI-533/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V qss f*DS on IRF530 IRF530FI 100 V 100 V 0.16 ß 0.16 ß Id ' 14 A 9 A