THERMAL ANALYSIS AND ITS APPLICATION TO HIGH POWER GAN HEMT AMPLIFIERS Search Results

THERMAL ANALYSIS AND ITS APPLICATION TO HIGH POWER GAN HEMT AMPLIFIERS Result Highlights (5)

Part	Manufacturer	Description
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
TPD2017FN	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30
TPD2015FN	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HDIP30

THERMAL ANALYSIS AND ITS APPLICATION TO HIGH POWER GAN HEMT AMPLIFIERS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
thermal analysis and its application to high power gan hemt amplifiers Abstract: heat and mass transfer CuMoCu MMIC doherty 113C 157C 300C Designing with Field Effect Transistors Text: Thermal Analysis and its application to High Power GaN HEMT Amplifiers A. Prejs, S. Wood, R. Pengelly, W. Pribble Cree Inc., Durham, NC 27703 USA Abstract – A systematic and consistent approach to the thermal modeling and measurement of GaN on SiC HEMT power transistors is described. Since the power density of such	Original		PDF
cgh60120D Abstract: 204C gan7 Text: APPLICATION NOTE Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors Introduction The objective of this application note is to provide users of Cree wide bandgap devices with a guideline of the thermal performance of high power SiC MESFET and GaN HEMT transistors. It explains	Original	APPNOTE-010 cgh60120D 204C gan7	PDF
High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and	Original		PDF
Untitled Abstract: No abstract text available Text: RFHA1101 RFHA1101 4.3W GaN On SiC Power Amplifier Die-On-Carrier The RFHA1101 is a 28V, 4.3W, GaN on SiC high power discrete amplifier die-on carrier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband	Original	RFHA1101 RFHA1101 36dBm DS131023	PDF
RF3930D Abstract: RF3930 Text: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB	Original	RF3930D RF3930D DS110406 RF3930	PDF
Untitled Abstract: No abstract text available Text: RFHA1101D RFHA1101D 4.3W GaN on SiC Power Amplifier Die Package: Die The RFHA1101D is a 28V, 4.3W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical,	Original	RFHA1101D RFHA1101D 36dBm DS131025	PDF
Untitled Abstract: No abstract text available Text: RF3930D RF3930D 10W GaN on SiC Power Amplifier Die Package: Die The RF3930D is a 48V, 10W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general	Original	RF3930D RF3930D 42dBm DS130906	PDF
Untitled Abstract: No abstract text available Text: RF3932D RF3932D 60W GaN on SiC Power Amplifier Die Package: Die The RF3932D is a 48V, 60W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general	Original	RF3932D RF3932D 49dBm DS130906	PDF
Untitled Abstract: No abstract text available Text: RF3934D 120W GaN on SiC Power Amplifier Die RF3934D Package: Die Features The RF3934D is a 48V, 120W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general	Original	RF3934D RF3934D 51dBm DS130906	PDF
Untitled Abstract: No abstract text available Text: RFHA3942D RFHA3942D 35W Linear GaN on SiC Power Amplifier Die The RFHA3942D is a 48V, 35W, GaN on SiC high power discrete amplifier die designed for military communications, electronic warfare, general purpose broadband, commercial wireless infrastructure, and industrial/scientific/medical applications. Using	Original	RFHA3942D RFHA3942D DS131024	PDF
Amplifier 10W bluetooth Abstract: DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector RF3930d 3930D SiC diode die Text: RF3930D 10W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain = 19dB at 2GHz  48V Typical Performance  Output Power: 16W at P3dB  Drain Efficiency: 70% at P3dB	Original	RF3930D RF3930D DS130412 Amplifier 10W bluetooth DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector 3930D SiC diode die	PDF
Untitled Abstract: No abstract text available Text: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB	Original	RFHA1101D 10GHz 14GHz DS110630	PDF
Untitled Abstract: No abstract text available Text: RF3931D RF3931D 30W GaN on SiC Power Amplifier Die Package: Die The RF3931D is a 48V, 30W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general	Original	RF3931D RF3931D DS130906	PDF
Untitled Abstract: No abstract text available Text: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB	Original	RF3930D DS110406	PDF

Untitled Abstract: No abstract text available Text: RF3933D RF3933D 90W GaN on SiC Power Amplifier Die Package: Die The RF3933D is a 48V, 90W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general	Original	RF3933D RF3933D DS130906	PDF
Untitled Abstract: No abstract text available Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB	Original	RFHA1101D 10GHz 14GHz DS110630	PDF
Untitled Abstract: No abstract text available Text: RFHA1101 Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB	Original	RFHA1101 10GHz 14GHz DS110630	PDF
Untitled Abstract: No abstract text available Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB	Original	RFHA1101 10GHz 14GHz DS110719	PDF
M1DGAN202 Abstract: No abstract text available Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB	Original	RFHA1101D 10GHz 14GHz RFHA1101D DS110630 M1DGAN202	PDF
4G base station power amplifier Abstract: No abstract text available Text: Virtuous impact of higher RF PA efficiency Circle of Green Rev. 2 — 5 July 2012 White paper Document information Info Content Author s Maury Wood – Program Manager, Operator marketing, NXP Semiconductors. The author acknowledges the contribution of the following NXP innovators who	Original		PDF
Untitled Abstract: No abstract text available Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB	Original	RF3932D 96mmx1 92mmx0 RF3932D DS110520	PDF
DS1304 Abstract: RFMD HEMT GaN SiC amplifier circuit diagram class E 30w Text: RF3931D 30W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain = 14dB at 2GHz  48V Typical Packaged Performance  Output Power: 50W at P3dB  Drain Efficiency: 65% at P3dB	Original	RF3931D RF3931D DS130423 DS1304 RFMD HEMT GaN SiC amplifier circuit diagram class E 30w	PDF
RFMD HEMT GaN SiC Abstract: Gan hemt transistor RFMD LDMOS 90W Text: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz RF IN VG Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged	Original	RF3933D90 RF3933D 96mmx2 52mmx0 RF3933D DS110520 RFMD HEMT GaN SiC Gan hemt transistor RFMD LDMOS 90W	PDF
Untitled Abstract: No abstract text available Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance	Original	RF3934D 96mmx4 57mmx0 DS110520	PDF

THERMAL ANALYSIS AND ITS APPLICATION TO HIGH POWER GAN HEMT AMPLIFIERS Search Results

THERMAL ANALYSIS AND ITS APPLICATION TO HIGH POWER GAN HEMT AMPLIFIERS Result Highlights (5)

THERMAL ANALYSIS AND ITS APPLICATION TO HIGH POWER GAN HEMT AMPLIFIERS Datasheets Context Search

thermal analysis and its application to high power gan hemt amplifiers

cgh60120D

High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

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RF3930D

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Amplifier 10W bluetooth

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M1DGAN202

4G base station power amplifier

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DS1304

RFMD HEMT GaN SiC

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