RF3933D90 Search Results

Contextual Info: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features  Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=14dB at 2GHz  48V Typical Packaged Performance

RFMD HEMT GaN SiC

Abstract: Gan hemt transistor RFMD LDMOS 90W
Contextual Info: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz RF IN VG Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged