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    THE MOSFET Search Results

    THE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    THE MOSFET Price and Stock

    Microchip Technology Inc APT12060LVRG

    Power MOSFET 1K2V 20A Avalanche
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    • 1 $19.44
    • 10 $17.86
    • 100 $16.32
    • 1000 $15.83
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    Microchip Technology Inc VRF152G

    RF Power Vertical MOSFET
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    Microchip Technology Inc DRF1400-CLASS-D

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    Onlinecomponents.com DRF1400-CLASS-D
    • 1 $3271.58
    • 10 $3174.17
    • 100 $3174.17
    • 1000 $3174.17
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    Microchip Technology Inc APT1003RKLLG

    Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220AC Tube
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    • 1 -
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    • 100 $6.6
    • 1000 $6.17
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    Microchip Technology Inc APT7M120S

    Trans MOSFET N-CH Si 1.2KV 8A 3-Pin(2+Tab) D3PAK Tube
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    THE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9727A N-MOSFET Load Switch Controller General Description Features The RT9727A is a load switch controller to control the external N-MOSFET load switch. The input voltage range of the RT9727A is from 6V to 25V. The RT9727A adopts the constant power discharge method to discharge the


    Original     		RT9727A RT9727A SC-70-6 DS9727A-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: AN356 Application Note CS1501 & CS1601: DRIVING THE ZCD PIN FROM THE MOSFET DRAIN 1. Introduction The CS1601 is designed with ZCD zero-current detection , providing the controller with the capability to turn on the MOSFET when the current through the boost inductor is close to zero. This can also be described as valley/zero crossings switching. This


    Original     		AN356 CS1501 CS1601: CS1601 AN356REV1 PDF

    "RF MOSFETs"

    Abstract: "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type
    Text: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the


    Original     		AN1226 "RF MOSFETs" "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type PDF

    "RF MOSFETs"

    Abstract: n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note
    Text: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the


    Original     		AN1226 "RF MOSFETs" n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note PDF

    nichicon vR

    Abstract: NICHICON VR SERIES BX Series nichicon United Chemi-Con SME series 1N4148 A3935 SLF7045 SLF7045T nichicon pf SERIES capacitor BT nichicon
    Text: Component Selection for the Boost Converter Used in the A3935 By Peter Tod This application note provides information to assist in the selection of components for designs using the Allegro MicroSystems A3935 three-phase MOSFET controller. In the first section, the general operation of the boost converter is


    Original     		A3935 A3935 nichicon vR NICHICON VR SERIES BX Series nichicon United Chemi-Con SME series 1N4148 SLF7045 SLF7045T nichicon pf SERIES capacitor BT nichicon PDF

    mosfet short circuit protection schematic diagram

    Abstract: No abstract text available
    Text: ZXMS6004EV1 USER GUIDE Description The ZXMS6004EV1 board Figure 1 is intended for the evaluation of the ZXMS6004FF self protected low side MOSFET. The evaluation board enables the user to evaluate the over-temperature, overcurrent and over-voltage (active clamp)


    Original     		ZXMS6004EV1 ZXMS6004FF ZXMS6004FF. ZXMS6004FF, OT223 BSP75G) D-81541 A1103-04, mosfet short circuit protection schematic diagram PDF

    RCD snubber

    Abstract: snubber circuit for mosfet RCD snubber mosfet design AN-4147 flyback snubber snubber capacitor for low frequency flyback switching snubber design flyback snubber design FSDM311 RCD snubber design
    Text: www.fairchildsemi.com Application Note AN-4147 Design Guidelines for RCD Snubber of Flyback Converters Abstract This article presents some design guidelines for the RCD snubber of flyback converters. When the MOSFET turns off, a high-voltage spike occurs on the drain pin because of a resonance between the leakage inductor Llk of the main transformer and the output capacitor (COSS) of the MOSFET. The


    Original     		AN-4147 RCD snubber snubber circuit for mosfet RCD snubber mosfet design AN-4147 flyback snubber snubber capacitor for low frequency flyback switching snubber design flyback snubber design FSDM311 RCD snubber design PDF

    AN-41

    Abstract: Power Integrations diode B25 NB b6 smd transistor b17 zener diode ALG B7 smd transistor transistor smd po3 transistor smd ALG pks606 PX 1N4007
    Text: Application Note AN-41 PeakSwitch Design Guide modulated jitter to reduce EMI. In addition, the ICs have integrated functions that provide system-level protection. The auto-restart function limits the dissipation in the MOSFET, the transformer and the output diode during overload, output shortcircuit and open-loop conditions, while the auto-recovering


    Original     		AN-41 AN-41 Power Integrations diode B25 NB b6 smd transistor b17 zener diode ALG B7 smd transistor transistor smd po3 transistor smd ALG pks606 PX 1N4007 PDF

    Untitled

    Abstract: No abstract text available
    Text: LX9610 10A, 20V, Synchronous Power Module TM P RELIMINARY D ATASHEET DESCRIPTION The unit can be enabled or shut down through the COMP/EN pin. Over current sensing is accomplished by measuring the voltage across the Rds-on of the low-side MOSFET. Current of the OCP pin of the IC


    Original     		LX9610 LX9610 PDF

    11FB-14

    Abstract: No abstract text available
    Text: LX9610 10A, 20V, Synchronous Power Module TM P RELIMINARY D ATASHEET DESCRIPTION The unit can be enabled or shut down through the COMP/EN pin. Over current sensing is accomplished by measuring the voltage across the Rds-on of the low-side MOSFET. Current of the OCP pin of the IC


    Original     		LX9610 600Khz 11FB-14 PDF

    high power rf 10kW

    Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
    Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order


    Original     		DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02 PDF

    100 amp 1000 volt GTO

    Abstract: AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L
    Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note Pageode Useutines DRAIN CURRENT ID (A) VG = 9(4.5)V The reduction in gate drive voltage is the result of halving the thickness of the gate insulator from the industry standard


    Original     		100nm 100 amp 1000 volt GTO AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L PDF

    siemens igbt chip

    Abstract: Semiconductor Group igbt break resistor in igbt bup 314 siemens igbt application note
    Text: IGBT Insulated Gate Bipolar Transistor 1 Differences Between MOSFET and IGBT 1.1 Structure The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only difference lies in the additional


    Original     		PDF

    EQUIVALENT fds4435

    Abstract: MOSFET TSSOP-8 dual n-channel ssot-6 FDS4435 FDS6679Z MOSFET TSSOP-8 common-drain fds4435 mosfet FDS9435A/SO-8 FDW2501NZ
    Text: Handset Batteries May 2003 One of the key components in the battery pack protection circuit is the MOSFET switch. The current handling capability, number of cells used, and environmental constraints greatly determine the specifications for this switch. Options for ESD protection devices integrated with the


    Original     		SC70-6, FDG6316P FDC6318P FDW2508P FDZ2554PZ FDZ2552P FDG6304P FDG6306P FDG6308P FDS6875 EQUIVALENT fds4435 MOSFET TSSOP-8 dual n-channel ssot-6 FDS4435 FDS6679Z MOSFET TSSOP-8 common-drain fds4435 mosfet FDS9435A/SO-8 FDW2501NZ PDF

    POWER MOSFET APPLICATION NOTE

    Abstract: RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet
    Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note VG = 9 4.5 V VG = 5(2.5)V 6 4 VG = 4(2)V 2 The apparent conclusion from a study of the switching waveforms of the new device that halving the gate oxide thickness would double the gate capacitance and halve the switching


    Original     		100nm POWER MOSFET APPLICATION NOTE RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet PDF

    RFP70N06

    Abstract: AN9322 AVALANCHE TRANSISTOR
    Text: Harris Semiconductor No. AN9322.1 Harris Power MOSFET January 1996 A Combined Single Pulse and Repetitive UIS Rating System Author: Wallace D. Williams the +25oC line, the application is beyond the UIS rating of the device and the user stands a risk of device failure. If the


    Original     		AN9322 1-800-4-HARRIS RFP70N06 AVALANCHE TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiHP8N50D 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    501N04

    Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05
    Text: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device


    OCR Scan     		DE-150 110MHz. 501N04 30MHz. DE-375 102N10 501N21 DE-275 101N30 5kw power amplifier amplifier 1000W 8 101N09 DE-275 Directed Energy 101N30 102N05 PDF

    mosfet 4914

    Abstract: wiring diagram for ge cr2943na102a MOSFET 818 ln PWM dc speed control of DC motor using IRF540 5BPB56HAA100 KC1000
    Text: General Description Features The MIC5010 is the full-featured member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The MIC5010 is


    OCR Scan     		MIC5010 MIC501X IC5010 mosfet 4914 wiring diagram for ge cr2943na102a MOSFET 818 ln PWM dc speed control of DC motor using IRF540 5BPB56HAA100 KC1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: General Description Features The MIC5011 is the “minimum parts count” member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 8-pin


    OCR Scan     		MIC5011 MIC501X MIL-STD-883 PDF

    accu charger

    Abstract: LM3641
    Text: Semiconductor tß L ith ium -Ion B a ttery P ack P rotection Circuit The IC also monitors the bi-directional current tlow in the bat1ery pack by measuring the voltage across a robust 4 m il current sensing resistor internal to the protection IC pack­ age. The IC 1urns OFF the MOSFET pair whenever any tault


    OCR Scan     		LM3641 LM3641 accu charger PDF

    Untitled

    Abstract: No abstract text available
    Text: MIC5012 Dual Power MOSFET Predriver SEMICONDUCTOR THE INTELLIGENT POWER COMPANY PRELIMINARY INFORMATION General Description Features The MIC5012 is the dual member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in


    OCR Scan     		MIC5012 MIC5012 MIC501X 14-pin 5V-32V PDF

    MIC5011AJ

    Abstract: No abstract text available
    Text: General Description Features The M IC 5011 is the “minimum parts count" member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 8-pin


    OCR Scan     		MIC5011 MIC501X IC5011 MIC5011AJ PDF

    I1N4001

    Abstract: mosfet power hf 1kw HF 2N 24V 30A irf540 mosfet control motor 24v PED relay cross reference IC5010 ic5012 EM- 546 motor PED relay 24V 1000-4T
    Text: G eneral Description Features The M IC5010 is the full-featured m em ber of the Micrel M IC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The M IC5010 is


    OCR Scan     		MIC5010 MIC501X IC5010 I1N4001 mosfet power hf 1kw HF 2N 24V 30A irf540 mosfet control motor 24v PED relay cross reference ic5012 EM- 546 motor PED relay 24V 1000-4T PDF