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    THC 472 Search Results

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    FPF21C8060UA-92

    Abstract: circuit for driving address electrodes PDP plasma display address electrode driving pdp scan driver 6072 TUBE FPF21C8060UA-02 fujitsu display 30 pin connector Plasma Display Panel timing control THC 472 VHR-5N
    Text: July 1994 Edition 2.0 DATA SHEET FPF21C8060UA-92 FULL COLOR PLASMA DISPLAY FULL COLOR PLASMA DISPLAY DESCRIPTION FEATURES The Fujitsu plasma display unit consists of an AC-type gas discharge plasma panel with memory function based on Fujitsu’s unique panel technologies and its driving circuit.


    Original     		PDF FPF21C8060UA-92 FPF21C8060UA-92 circuit for driving address electrodes PDP plasma display address electrode driving pdp scan driver 6072 TUBE FPF21C8060UA-02 fujitsu display 30 pin connector Plasma Display Panel timing control THC 472 VHR-5N

    sharp lcd t-con

    Abstract: LQ0DZC2291 LQ0DZ Timing controller T-con SHARP IR3 800RGB wVGA gamma ray color search circuit lcd t-con 1000H
    Text: RECORDS OF REVISION Type No：LQ0DZC2291 SPEC No. Date NO. LCY-09033A 2009. 06.05 LCY09033B 2009.12.8 PAGE SUMMARY NOTE - - 1st Issue 22 Connection of terminal STHR/STHL and 2nd Issue LCD. Note: In this ASIC Specification, binary notation, decimal notation and hexadecimal notation are described


    Original     		PDF NoLQ0DZC2291 LCY-09033A LCY09033B 111000b. 1000H. LCY-09033B-1 LCY-09033B-39 LCY-09033B-40 LCY-09033B-41 LCY-09033B-42 sharp lcd t-con LQ0DZC2291 LQ0DZ Timing controller T-con SHARP IR3 800RGB wVGA gamma ray color search circuit lcd t-con 1000H

    D2PAK1

    Abstract: No abstract text available
    Text: Cherry Semiconductor offers a wide variety of traditional packages in addition to more advanced package technology. Flip Chip is an example of the advanced packaging technologies offered by Cherry Semiconductor. An application note included in this section explains the Flip Chip manufacturing process and the methods available for Flip Chip assembly.


    Original     		PDF MS-026 MO-108 D2PAK1

    CY7C1312BV18

    Abstract: CY7C1314BV18 CY7C1312
    Text: CY7C1312BV18 CY7C1314BV18 18 Mbit QDR II SRAM Two Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth ■ 2-word burst on all accesses


    Original     		PDF CY7C1312BV18 CY7C1314BV18 CY7C1312BV18 CY7C1314BV18 CY7C1312

    4b/5b encoder

    Abstract: HD -1553 CMOS manchester encoder-decoder STE100P
    Text: STE100P 10/100 FAST ETHERNET 3.3V TRANSCEIVER PRODUCT PREVIEW 1.0 DESCRIPTION The STE100P, also referred to as STEPHY1, is a high performance Fast Ethernet physical layer interface for 10BASE-T and 100BASE-TX applications. It was designed with advanced CMOS technology to


    Original     		PDF STE100P STE100P, 10BASE-T 100BASE-TX 100BASETX IEEE802 4b/5b encoder HD -1553 CMOS manchester encoder-decoder STE100P

    T2D 48

    Abstract: STE100P stmicroelectronics "serial eeprom" PQFP64 ST4200 t2a10
    Text: STE100P 10/100 FAST ETHERNET 3.3V TRANSCEIVER PRODUCT PREVIEW 1.0 DESCRIPTION The STE100P, also referred to as STEPHY1, is a high performance Fast Ethernet physical layer interface for 10BASE-T and 100BASE-TX applications. It was designed with advanced CMOS technology to


    Original     		PDF STE100P STE100P, 10BASE-T 100BASE-TX 100BASETX IEEE802 T2D 48 STE100P stmicroelectronics "serial eeprom" PQFP64 ST4200 t2a10

    nrz to nrzi decoder

    Abstract: RT3 RT4
    Text: STE100P 10/100 FAST ETHERNET 3.3V TRANSCEIVER PRODUCT PREVIEW 1.0 DESCRIPTION The STE100P, also referred to as STEPHY1, is a high performance Fast Ethernet physical layer interface for 10BASE-T and 100BASE-TX applications. It was designed with advanced CMOS technology to


    Original     		PDF STE100P STE100P, 10BASE-T 100BASE-TX 100BASETX IEEE802 nrz to nrzi decoder RT3 RT4

    CY7C1310BV18

    Abstract: CY7C1312BV18 CY7C1314BV18 CY7C1910BV18
    Text: CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18-Mbit QDR -II SRAM 2 Word Burst Architecture Features Functional Description Separate Independent read and write data ports ❐ Supports concurrent transactions • 250 MHz clock for high bandwidth ■ 2 Word Burst on all accesses


    Original     		PDF CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18-Mbit CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, CY7C1314BV18 CY7C1310BV18 CY7C1312BV18 CY7C1910BV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18-Mbit QDR-II SRAM 2-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 250-MHz clock for high bandwidth


    Original     		PDF CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18-Mbit 250-MHz

    CY7C1312BV18-167BZC

    Abstract: No abstract text available
    Text: CY7C1312BV18 CY7C1314BV18 18-Mbit QDR II SRAM Two-Word Burst Architecture 18-Mbit QDR® II SRAM Two-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth


    Original     		PDF CY7C1312BV18 CY7C1314BV18 18-Mbit CY7C1312BV18, CY7C1314BV18 CY7C1312BV18-167BZC

    CY7C1310BV18

    Abstract: CY7C1312BV18 CY7C1314BV18 CY7C1910BV18
    Text: CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18-Mbit QDR-II SRAM 2-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 250-MHz clock for high bandwidth


    Original     		PDF CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18-Mbit 250-MHz CY7C1310BV18 CY7C1312BV18 CY7C1314BV18 CY7C1910BV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1312BV18 CY7C1314BV18 18-Mbit QDR II SRAM Two-Word Burst Architecture 18-Mbit QDR® II SRAM Two-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth


    Original     		PDF CY7C1312BV18 CY7C1314BV18 18-Mbit CY7C1312BV18, CY7C1314BV18

    CY7C1310BV18

    Abstract: CY7C1312BV18 CY7C1314BV18 CY7C1910BV18 CY7C1314BV18-167BZXI
    Text: CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 18-Mbit QDR -II SRAM 2-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth


    Original     		PDF CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 18-Mbit CY7C1310BV18 CY7C1312BV18 CY7C1314BV18 CY7C1910BV18 CY7C1314BV18-167BZXI

    SANYO POSCAP 4TPB220M

    Abstract: SANYO 16TQC100M 6TPU10M Sanyo date code marking sanyo capacitors 6SVPS120M SANYO POSCAP 6sp150M TAE 13005 2TPLF470M5 2R5TPF470M6L
    Text: SANYO Capacitors General Catalog 2008-10 Aluminum Electrolytic Capacitors Aluminum Solid Capacitors with Conductive Polymer Aluminum Solid Capacitors with Organic Semiconductive Electrolyte Aluminum Electrolytic Capacitors Aluminum Electrolytic Capacitors with


    Original     		PDF 25TQC5R6M 20TQC8R2M 16TQC15M 16TQC10M 25TQC10M 20TQC15M 16TQC22M 25TQC22M 25TQC22MV 25TQC15M SANYO POSCAP 4TPB220M SANYO 16TQC100M 6TPU10M Sanyo date code marking sanyo capacitors 6SVPS120M SANYO POSCAP 6sp150M TAE 13005 2TPLF470M5 2R5TPF470M6L

    Untitled

    Abstract: No abstract text available
    Text: IBM11D2480BA IBM11E2480BA 2M x 36 ECC-on-SIMM 4Features • 72 -P in J E D E C -S ta n d a rd S ing le In-Line M e m o ry M o du le • P erform ance: S ingle-error-correct S E C high-speed E C C algorithm Single 5 V 0 .2 5 V P ow er Supply All inputs & outputs are fully T T L & C M O S


    OCR Scan     		PDF IBM11D2480BA IBM11E2480BA 130ns is/94 MMDS19DSU-01 IBM11E2480BA 64G2311 MM0S19DSU-01

    XN357

    Abstract: No abstract text available
    Text: LMS12 12-bit Cascadable M ultip lie r-S u m m e r H IM □ 12 x 12-bit Multiplier with Pipelined 26-bit Output Summer □ Summer has 26-bit Input Port Fully Independent from Multiplier Inputs □ Cascadable to Form Video Rate FIR Filter with 3-bit Headroom


    OCR Scan     		PDF LMS12 12-bit 26-bit 84-pin LMS12 LMS12GC65 XN357

    Untitled

    Abstract: No abstract text available
    Text: SA M S U N G E L E C T R O N I C S INC b4E D • 7 cî b m 4 5 KMM584100N Ü G 1 4 7 5 3 2bl DRAM MODULES 4 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584100N is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM584100N KMM584100N KM44C41000J 24-pin 30-pin KMM584100N-6 110ns KMM584100N-7 130ns

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6465B 16Kx4Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12, 15, 2 0 ,2 5 ns Max. T h e K M 6 4 6 5 B is a 6 5 ,5 3 6 -b it • Low Pow er Dissipation Random Access Memory organized as 16,3 84 words by Standby (TTL) h igh-speed S tatic


    OCR Scan     		PDF KM6465B 16Kx4Bit 6465B

    IBF20

    Abstract: IC ST 201A 600PE80
    Text: INTERNATIONAL RECTIFIER "4T ß F § 4 Ö S S 4 S a ODD47S4 1 Data Sheet No. PD-3.073 IN T E R N A T I O N A L I“ R R E C T I F I E R 'T'j.s''ÆO 940A RMS Hockey Puk Thyristors 600 PE SERIES Description The 60 0 P E series of converter type hockey puk thyristors use


    OCR Scan     		PDF ODD47S4 IBF20 IC ST 201A 600PE80

    HYM536200AM

    Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
    Text: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling


    OCR Scan     		PDF HYM536200A 36-blt 36-bit HY514400A HY531000A HYM536200AM/ALM HYM536200AMG/ALMG 11CD04-00-MAY93 36200A HYM536200AM WE005 HYM536200Aibm pc 700M/ALM

    47SB

    Abstract: 600PE160 600PE180 TP 8370 600PE80 6425 ma 8920 600PE100 600PE120 600PE140
    Text: INTERNATIONAL RECTIFIER 4T DeT| i|ÛS545a 00 04 7 5 4 Data Sheet No. PD-3.073 IN T E R N A T IO N A L R E C T IF IE R I R 940A RMS Hockey Puk Thyristors 600PE SERIES Description T he 6 0 0 P E series o f converter type hockey p u k thyristors use centre am plified gate junction technology. These devices with


    OCR Scan     		PDF D0D47SM 600PE Tlx-95219 CA90245 II60067. 0765a 47SB 600PE160 600PE180 TP 8370 600PE80 6425 ma 8920 600PE100 600PE120 600PE140

    HD4942

    Abstract: No abstract text available
    Text: Preliminary HD49421FS PIP Controller for NTSC with On-Chip A/D and D/A Converters Description Features T he H D 4 9 4 2 1 F S is a m em ory co n tr o lle r for NTSC -type picture-in-picture (PIP) system s. The chip integrates one 6-bit A /D converter, two 7-bit


    OCR Scan     		PDF HD49421FS 49421F 5346I) HD4942

    FT6110

    Abstract: si4844
    Text: PRECISION SURFACE MOUNT INOUCTORS • HIGH a■ HIGH SRF « HIGH CURRENT • TIGHT TOLERANCE - MADE IN USA C H O K E C O IL S 0 8 0 3 S E R IE S 1 62 Typ mm 1.80 1. 12 Max Max 1 02 ¡ Max ! 0.76 Typ P a rt N um ber 0603GlR4*E 0603G!R5*E 0603GIR8*E 06O3G2R0*E


    OCR Scan     		PDF 0603GlR4* 0603G 0603GIR8* 06O3G2R0* 06C3G3R9* 0603G4R7* 0603G6R8 0603G8R6* 0603GI FT6110 si4844