5SGS 12F2500
Abstract: ABB Typ RGC ITGQM GTO thyristor ABB
Text: 5SGS 12F2500 5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630
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Original
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12F2500
1768/138a,
TG/164/05b
Mar-12
5SGS 12F2500
ABB Typ RGC
ITGQM
GTO thyristor ABB
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PDF
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Thyristor snubber
Abstract: No abstract text available
Text: 5SGS 12F3000 5SGS 12F3000 Old part no. TG 908-1200-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 200 I TAVm = 630 I TSM = 10 000
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Original
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12F3000
12F3000
12F2500
1768/138a,
TG/164/05
Jul-10
Jul-10
Thyristor snubber
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PDF
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Untitled
Abstract: No abstract text available
Text: 5SGS 16H3000 5SGS 16H3000 Old part no. TG 919-1600-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 600 I TAVm = 760 I TSM = 14 000
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Original
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16H3000
16H3000
16H2500
1768/138a,
TG/170/05
Jul-10
Jul-10
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PDF
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5SGS 16H4500
Abstract: CS 23-06 thyristor
Text: 5SGS 16H4500 5SGS 16H4500 Old part no. TG 919-1600-45 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 600 I TAVm = 600
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Original
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16H4500
1768/138a,
TG/171/05a
Sep-11
5SGS 16H4500
CS 23-06 thyristor
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PDF
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ABB Typ RGC
Abstract: 5SGS12F4500
Text: 5SGS 12F4500 5SGS 12F4500 Old part no. TG 918-1200-45 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 200 I TAVm = 442 I TSM = 7 600
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Original
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12F4500
12F4500
12F4000
1768/138a,
TG/142/04
Jul-10
Jul-10
ABB Typ RGC
5SGS12F4500
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PDF
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abb cs 400
Abstract: THYRISTOR 1200 5SGS08D2500
Text: 5SGS 08D3000 5SGS 08D3000 Old part no. TG 907-800-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 800 I TAVm = 395 I TSM = 4 500
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Original
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08D3000
08D3000
08D2500
1768/138a,
TG/161/05
Jul-10
Jul-10
abb cs 400
THYRISTOR 1200
5SGS08D2500
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PDF
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5SGS 16H2500
Abstract: No abstract text available
Text: 5SGS 16H2500 5SGS 16H2500 Old part no. TG 919-1600-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 600 I TAVm = 760
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Original
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16H2500
1768/138a,
TG/170/05a
Sep-11
5SGS 16H2500
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PDF
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5SGS 08D4500
Abstract: abb cs 400 CS thyristor cs 3-06
Text: 5SGS 08D4500 5SGS 08D4500 Old part no. TG 907-800-45 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 800 I TAVm = 285
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Original
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08D4500
1768/138a,
TG/079/02c
Sep-11
5SGS 08D4500
abb cs 400
CS thyristor cs 3-06
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PDF
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abb cs 400
Abstract: CS thyristor cs 3-06
Text: 5SGS 08D4500 5SGS 08D4500 Old part no. TG 907-800-45 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 800 I TAVm = 285 I TSM = 4 000
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Original
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08D4500
08D4500
08D4000
1768/138a,
TG/079/02b
Jul-10
Jul-10
abb cs 400
CS thyristor cs 3-06
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PDF
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5SGS 08D2500
Abstract: 5SGS08D2500 abb cs 400 igcm abb 800 5SGS
Text: 5SGS 08D2500 5SGS 08D2500 Old part no. TG 907-800-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 800 I TAVm = 395
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Original
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08D2500
1768/138a,
TG/161/05a
Sep-11
5SGS 08D2500
5SGS08D2500
abb cs 400
igcm
abb 800
5SGS
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PDF
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CS 23-06 thyristor
Abstract: No abstract text available
Text: 5SGS 16H4500 5SGS 16H4500 Old part no. TG 919-1600-45 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 600 I TAVm = 600 I TSM = 12 000
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Original
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16H4500
16H4500
16H4000
1768/138a,
TG/171/05
Jul-10
Jul-10
CS 23-06 thyristor
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PDF
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Untitled
Abstract: No abstract text available
Text: 5SGS 12F2500 5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630
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Original
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12F2500
1768/138a,
TG/164/05a
Sep-11
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PDF
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SG1500GXH25
Abstract: RMA45
Text: TO SHIBA TENTATIVE SG1500GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG1500GXH25 Unit in mm INVERTER APPLICATION Vd RM—4500V Note 1 Repetitive Peak Reverse Voltage : V rrm = 4000V R.M.S On-State Current : i T(RMS) = 750A Peak Turn-Off Current : ^TGQM —1500A
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OCR Scan
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SG1500GXH25
10msWidth
1150C
300mA
SG1500GXH25
RMA45
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PDF
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toshiba gto
Abstract: SG3000GXH23 SG3000GXH29
Text: TO SH IBA SG3000GXH23 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG3000GXH23 Repetitive Peak Off-State Voltage V d RM = 4500 V R.M.S On-State Current ÏT RMS = 1200 A Peak Turn-Off Current :TGQM = 3000 A Critical Rate of Rise of On-State Current : d i/ dt = 400 A//us
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OCR Scan
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SG3000GXH23
toshiba gto
SG3000GXH23
SG3000GXH29
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PDF
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Untitled
Abstract: No abstract text available
Text: GATE TURN-OFF THYRISTOR SG1500 R,U,W 22 CH OPPER, INVER TE R A P P L I C A R I O N . Repetitive Peak Off-State Voltage Unit in mm : V d r m =1300, 1600, R.M.S On-State Current :It (RMS) = 55 0A Peak Turn-Off Current :l TGQM= 1500A 180 0V 2 - j* 3 .6 ± 0 .2
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OCR Scan
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SG1500
01OMAX
l000V/ns
SGI500R22
SG1500U22
SGI500W22
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LOW SNUBBERTYPE SG4000JX26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: VDRM = 6000V Note 1. • R.M.S. On-State Current: 't(R M S ) = 1600A (Tf=75°C) • Critical Rate of Rise of On-State Current: 'tgqm = 4000A d i/d t =500A /|is
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OCR Scan
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SG4000JX26
/dt-20A
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PDF
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WG5026S
Abstract: WG6006RXX X103 westcode diodes westcode wg
Text: Gate T urn-off Thyristors ~ All types Symmetrical Types V R RM ^TGQM@ C S CO ^DRM > Type V GK = -2V I t AV T « =55°C •^TSM(2) 2ms I2t (Note 4) (kA) (Note 4) (Note 4) (kA) (A 2s) 4 7.2 80 x 103 9 130 x 1 0 3 9-8 18 500 x 103 •^T(RMS) W ^ T SM (1) 10ms
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OCR Scan
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W25-C
WG5012Rxx
25Rxx
WG6006RXX
18Rxx
WG9006Rxx
14Rxx
WG10026Rxx
36Rxx
WG10037RXX
WG5026S
X103
westcode diodes
westcode wg
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A SG800GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG800GXH24 INVERTER APPLICATION U nit in mm = 4500V Repetitive Peak Off-State Voltage V DRM R.M.S On-State C urrent IT RMS = 300A Peak Turn-Off C urrent i TGQM = 800A Critical Rate of Rise of On-State C urrent
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OCR Scan
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SG800GXH24
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PDF
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SG1000GXH26
Abstract: No abstract text available
Text: T O S H IB A SG1000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG1000GXH26 Unit in mm INVERTER APPLICATION 43MAX. VDRM = 4500 V lT RMS = 500 A :TGQM = !000 A d i/d t = 600 A / jus dv / dt = 1000 V / jus Ü M AXIM UM RATINGS SYMBOL RATING CHARACTERISTIC
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OCR Scan
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SG1000GXH26
SG1000GXH26
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PDF
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wg5026s
Abstract: 45SP 18Rxx
Text: Gate T urn-off Thyristors ~ All ty p e s Symmetrical Types V DRM Type V RRM V GK ^TGQM @ cs ^T AV ^T(RMS) TSINk =55°C W 2 5 ° C VaK= -2V •^TSM(l) ■^TSM(2) 10ms 2m s I 2t (Note 1) (Note 1) (Note 2) (Note 3) (Note 3) (Note 4) (Note 4) (V) (V) (V) (A)
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OCR Scan
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G5012RXX
25RXX
G6006RXX
18Rxx
WG5026
WG7008
WG8026
WG8046
WG10008
WG10026
wg5026s
45SP
18Rxx
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PDF
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Gate Turn-off Thyristor
Abstract: gate turn-off SGB00R24 jdrm SG800 thyristor toshiba 1351B
Text: SG800 R,U,W 24 TOSHIBA GATE TURN-OFF THYRISTOR SG800 <R ,U, W) 24 (SGB00R24) U nit in mm 2-fl3.6±0.2 CHOPPER, INVERTER APPLICATION Repetitive Peak OfT-State Voltage : V d rm = 1300, 1600, 1800V R.M.S On-State Current : I t (R M S ) = 360A Peak Turn-OfF Current
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OCR Scan
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SG800
SGB00R24)
SG800R24
SG800U24
SG800W24
SG800
Gate Turn-off Thyristor
gate turn-off
SGB00R24
jdrm
thyristor toshiba
1351B
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PDF
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SG1400EX21
Abstract: SG1400EX
Text: GATE TURN-OFF THYRISTOR SILICON DIFFUSED TYPE SG1400EX21 CHOPPER, INVERTER APPLICATION. Unit in mm ‘ ¿-¡as. 2 ± Q 2 FEATURES: . Repetitive Peak Off-State Voltage V D R M =2 500V . Repetitive Peak R e v e r s e V o l t a g e V rrm=500V . R .M.S O n - S t a t e C u r r e n t
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OCR Scan
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SG1400EX21
50A//is
00V//1
1400g
00V//is,
SG1400EX21
SG1400EX
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PDF
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SG3000JXH25
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE SG3000JXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000JXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage VDRM = 6500V Note 1 Repetitive Peak Reverse Voltage : VRRM = 6500V R.M.S On-State Current • :T (RMS)= 800À Peak Turn-Off Current
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OCR Scan
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SG3000JXH25
--3000A
10msWidth
SG3000JXH25
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PDF
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sg3000gx
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current
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OCR Scan
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SG3000GXH25
10ms16000
--2500A
--3000V
300mA
--300A
sg3000gx
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PDF
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