SG3000GX Search Results

CS thyristor

Abstract: Thyristor CS 165 SHR400 cs50n SG1500GXH25 SL3000GX22 2500v SHR400R22 reverse conducting thyristor 4500v
Contextual Info: Gate Turn-O ff Thyristors Anode Short Type Reverse Conducting Type Symmetrical Type -> Peak Off State Voltage 2500V 4500V Type No. SG800EX25* SG1400EX25" SGB00GXH25 SGR3000EX26 SG1500GXH25 SG3000GXH25 SGR3000GXH26 It q q m 800 1400 1500 3000 C2 C2 * underdevelopment

SG3000GXH29

Abstract: SG3000GXH 13-108D1A
Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent

SG3000GXH29

Contextual Info: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us

Contextual Info: TO SHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm = 4500V Note 1 Repetitive Peak Reverse Voltage : V r r m = 4000V R.M.S On-State Current : IT(RMS) = 800A

sg3000gx

Contextual Info: TOSHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current

SG3000GXH24

Abstract: Gate Turn-off Thyristor sg3000gxh24
Contextual Info: TO SH IBA SG3000GXH24 T O S H IB A GATE T U R N -O F F THY RISTOR SG3000GXH24 INVERTER APPLICA TION Repetitive Peak Off-State Voltage : V d r m = 4500 V R.M.S On-State Current : It RMS = 1200 A Peak Turn-Off Current : It GQM = 3000 A Critical Rate of Rise of On-State Current : di / dt = 400 A / jus

4500v

Abstract: SG3000GXH23G SG3000GXH29
Contextual Info: TOSHIBA TENTATIVE SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage VdRM = 4500V R.M.S On-State Current IT RMS = 1200A Peak Turn-Off Current ItGQM —3000A Critical Rate of Rise of On-State Current : di/dt = 400A/ jus

toshiba gto

Abstract: SG3000GXH23 SG3000GXH29
Contextual Info: TO SH IBA SG3000GXH23 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG3000GXH23 Repetitive Peak Off-State Voltage V d RM = 4500 V R.M.S On-State Current ÏT RMS = 1200 A Peak Turn-Off Current :TGQM = 3000 A Critical Rate of Rise of On-State Current : d i/ dt = 400 A//us

SG3000GXH24

Abstract: Gate Turn-off Thyristor sg3000gxh24
Contextual Info: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG3000GXH24 DATA S G 3 0 0 0 G XH 2 4 J Unit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : V d rm ;= 4500V R.M.S On-State Current : It (RMS = 1200A Peak Turn-Off Current

SG3000GXH29

Abstract: LT10
Contextual Info: TOSHIBA SG3000GXH29 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH29 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d RM —4500V R.M.S On-State Current : It RMS = 1200A Peak Turn-Off Current : It GQM —3000A Critical Rate of Rise of On-State Current : di/dt= 400A / jus

SG3000GXH25

Abstract: Gate Turn-off Thyristor
Contextual Info: TO SH IBA TENTATIVE INVERTER APPLICATION SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR S G 3 0 0 0 G X H 25 Unit in mm Repetitive Peak Off-State Voltage : VDRM - 4500 V Note 1 Repetitive Peak Reverse Voltage • VRRM = 4000 V R.M.S On-State Current • lT (RMS) = 800 A

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent

Contextual Info: TOSHIBA SG3000GXH23 TENTATIVE TOSHIBA GATE TURN-OFF THYRISTOR < ;r ;3 n n n r ; Y H 73 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V R.M.S On-State Current ÌT RMS = 1200A Peak Turn-Off Current ITGQM —3000A Critical Rate of Rise of On-State Current : d i/d t = 400A /(lus

Contextual Info: TO SH IBA TENTATIVE INVERTER APPLICATION SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR S G 3 0 0 0 G X H 25 Unit in mm Repetitive Peak Off-State Voltage : VDRM - 4500 V Note 1 Repetitive Peak Reverse Voltage • VRRM = 4000 V R.M.S On-State Current • lT (RMS) = 800 A

Contextual Info: TOSHIBA SG3000GXH23 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG3000GXH23 Unit in mm Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A i T G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us

Contextual Info: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG3000GXH24 DATA SG3000GXH24 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current : It GQM = 3000A

SG3000GXH29

Contextual Info: SEMICONDUCTOR T O SH IB A TECHNICAL TOSHIBA GATE TURN-OFF THYRISTOR. SG3000GXH29 DATA S G 3 0 0 0 G XH 2 9 J Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm ;= 4500V R.M.S On-State Current : It (RMS = 1200A Peak Turn-Off Current

sm4500

Abstract: Gate Turn-off Thyristor sg3000gxh24 SG3000GXH24
Contextual Info: SG3000GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH24 SG3000GXH24 Unit in mm INVERTER APPLICATION RepetiUve Peak Off-State Voltage : 4500V R.M.S On-State Current : I t (R M S ) = 1200A Peak Turn-Off Current : I t GQM = 3000A Critical Rate of Rise of On-State Current : d i/d t= 4 0 0 A ///s

TOSHIBA FL INVERTER

Abstract: SG3000GXH23 n42a
Contextual Info: TO SHIBA TENTATIVE SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR SG3QQ0GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V R.M.S On-State Current 1T RMS = 1200A Peak Turn-Off Current ITGQM —3000A Critical Rate of Rise of On-State Current : d i/d t = 400A /(lus

SG600EX21

Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18
Contextual Info: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01

snubber diode

Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11

500EXH21

Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that

100EXG11

Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Contextual Info: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26

gate turn off thyristors

Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that