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    TG2205F Search Results

    TG2205F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TG2205F Toshiba Rf Switch, RF SPDT Switch Original PDF
    TG2205F Toshiba RF SPDT switch (application: PHS ) Original PDF
    TG2205FTE85L Toshiba Rf Switch, RF SPDT Switch, Tape and Reel Original PDF

    TG2205F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TG2205F

    Abstract: No abstract text available
    Text: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features Low insertion loss: LOSS = 0.5dB (typ.) Hight isolation: ISL = 25dB (typ.) Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)


    Original     		PDF TG2205F 000707EBC2 TG2205F

    TG2205F

    Abstract: RF SPDT
    Text: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features l Low insertion loss: LOSS = 0.5dB (typ.) l Hight isolation: ISL = 25dB (typ.) l Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)


    Original     		PDF TG2205F TG2205F RF SPDT

    Untitled

    Abstract: No abstract text available
    Text: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features Low insertion loss: LOSS = 0.5dB (typ.) Hight isolation: ISL = 25dB (typ.) Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)


    Original     		PDF TG2205F

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR

    FET K161

    Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
    Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509

    2SK3075 equivalent

    Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
    Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz


    Original     		PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 11n*F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT Tfi TG2205F GaAs MONOLITHIC RF SPDT SWITCH APPLICATION : PHS FEATURES • LOW INSERTION LOSS Loss =0 5dB (Typ.) • HIGHT ISOLATION ISL = 25dB (Typ.) • CONTROL VOLTAGE 0V/3V PIN CONNECTION (TOP VIEW)


    OCR Scan     		PDF TG2205F 961001EBA1

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TG2205F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2205F RF SPDT SWITCH APPLICATION : PHS FEATURES • LOW INSERTION LOSS Loss = 0.5 dB (Typ.) • HIGHT ISOLATION ISL = 25 dB (Typ.) • CONTROL VOLTAGE 0 V/3 V PIN CONNECTION (TOP VIEW )


    OCR Scan     		PDF TG2205F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TG2205F TO SH IB A G aA s LIN EA R IN TEG R A TED C IRCU IT T fi 1 1 • 'W G aA s M O N O LITH IC nR F H r ■ RF SPDT SWITCH APPLICATION : PHS FEATURES • LO W INSERTION LOSS LOSS = 0-5dB (Typ .) • HIGHT ISOLATION ISL = 25dB (Typ.) • CO N TRO L V O LTA G E


    OCR Scan     		PDF TG2205F

    PJ 74

    Abstract: TG2205F RF SPDT marking 7T
    Text: TOSHIBA TG2205F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2205F RF SPDT SWITCH APPLICATION : PHS FEATURES • LOW INSERTION LOSS LOSS = 0.5dB (Typ.) • HIGHT ISOLATION ISL = 25dB (Typ.) • CONTROL VOLTAGE 0V/3V PIN CONNECTION (TOP VIEW)


    OCR Scan     		PDF TG2205F 961001EBA1 PJ 74 TG2205F RF SPDT marking 7T