MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
MMBD2103
ZENER DIODE t2d
MMBD2101
MMBD2102
MMBD2104
SMD codes
bc107 TRANSISTOR SMD CODE PACKAGE SOT23
Transistor NEC 05F
BAT15-115S
NDS358N
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
SMD Codes
TRANSISTOR SMD T1P
MMBD2104
BAW92
smd transistor A6a
schottky diode s6 81A
a4s smd transistor
Transistor SMD a7s
transistor SMD P2F
MMBD2101
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
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SGLA36AT0600
Abstract: SGHA36AT0600 GE TFK Breakers SELA36AT0100 SGHA36AT0400 TFK4 Cable GEH-5591 SKHA36AT1200 skla36at0800 sfla36at0250
Text: Molded Case Circuit Breakers Molded Case Circuit Breakers – Features .3-2 Spectra RMS Circuit Breakers with MicroVersaTrip Plus Trip Units – Features .3-3 Molded Case Circuit Breakers – Quick Reference Guide .3-4
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480/277V
SGLA36AT0600
SGHA36AT0600
GE TFK Breakers
SELA36AT0100
SGHA36AT0400
TFK4 Cable
GEH-5591
SKHA36AT1200
skla36at0800
sfla36at0250
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Untitled
Abstract: No abstract text available
Text: 19-0625; Rev 1; 1/07 EEPROM-Programmable, High-Voltage, 350mA LED Drivers with LED Current Foldback The MAX16805/MAX16806 LED drivers eliminate the need for microcontrollers or switch-mode converters for automotive interior dome, map, and courtesy light applications. An EEPROM-programmable LED currentsense reference simplifies production by using one
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350mA
MAX16805/MAX16806
200Hz
MAX16805/MAX16806
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TFK 447
Abstract: TFK 505 TFK 101 tfk 114 TFK 19 106 TFK 4 232 TFK 838 23 tfk 101 tfk 408 MAX16805ATP
Text: 19-0625; Rev 1; 1/07 KIT ATION EVALU E L B A AVAIL EEPROM-Programmable, High-Voltage, 350mA LED Drivers with LED Current Foldback The MAX16805/MAX16806 LED drivers eliminate the need for microcontrollers or switch-mode converters for automotive interior dome, map, and courtesy light
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350mA
MAX16805/MAX16806
200Hz
350mA
MAX16805/MAX16806
TFK 447
TFK 505
TFK 101
tfk 114
TFK 19 106
TFK 4 232
TFK 838
23 tfk 101
tfk 408
MAX16805ATP
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TFK 305
Abstract: tfk 226 0/TFK 036
Text: A tfK c m "INTERCONNECT DIVISION OSX Microminiature Snap-On Connectors and Adapters OSX subminiature snap-on connectors from M/A-COM are an excellent blend of size, weight, durability and performance for applications such as GPS, automotive and wireless communications. OSX connectors are 30% smaller
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MIL-C-39012
MIL-C-225220/10-01
TFK 305
tfk 226
0/TFK 036
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TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
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TFK 1n4148
Abstract: TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk
Text: VISHAY ▼ Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Although every effort has been made to assure accurate and reliable substitutions, Vishay Telefunken assumes
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1N3600
1N3604
1N4148
1N914
1N4150
1N4151
1N4153
1N4154
TFK 1n4148
TFK BAV20
TFK BAV21
1N53488
bzx850
BZX85g
BZV85-C6V8 vishay
1N458A substitution
BZXB4-C51
1N4148 tfk
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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TFK u 116
Abstract: tl 271 TFK 725 tfk 108 TFK 311 tfk 140 TFK 450 dc/TFK 730
Text: M ECL M C 350 series UNE DRIVER MC365 L in d r i v e r f o r d r i v i n g l i n e s o f 5 0 o h m s o r g r e a t e r w h ile p r o v id in g th e p o s itiv e logic ' N O R fu n c tio n a n d its c o m p le m e n t s im u lta n e o u s ly . E L E C T R IC A L C H A R A C T E R IS T IC S
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MC365
50-Ofc*
TFK u 116
tl 271
TFK 725
tfk 108
TFK 311
tfk 140
TFK 450
dc/TFK 730
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TFK E 1024
Abstract: No abstract text available
Text: OEC 7 1992 1Meg X 4 Monolithic DRAM molate MDM41000-80/10/12 Issue 3.1 : D ecem ber 1992 S e m ic o n d u c to r inc. Pin Definition Package Type: 1,048,576 X 4 CMOS High Speed Dynamic RAM Features A0 C 2n 3 0 4 q 5 c c r u L A1 7 A2 8 A3 9 Vcc 10 DO Row Access Time of 80,100,120 ns
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MDM41000-80/10/12
MIL-STD-883
TFK E 1024
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MZMA
Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-20
DD25F-40
DD25F-60
DD25F-80
DD30GB-40
MZMA
DBF10E
DBF20B
DBF20G
DBF20TC
DBF20TE
DBF20TG
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MZMA
Abstract: OC 170 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-20
DD25F-40
DD25F-60
DD25F-80
DD30GB-40
MZMA
OC 170
DBF10E
DBF20B
DBF20G
DBF20TC
DBF20TE
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MZMA
Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-20
DD25F-40
DD25F-60
DD25F-80
DD30GB-40
MZMA
DBF10E
DBF20B
DBF20G
DBF20TC
DBF20TE
DBF20TG
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E80276
Abstract: No abstract text available
Text: TM200DZ/CZ/PZ-M,-H,-24,-2H ffl ü N c fij . 3-48 m 30159 m io m it TM200DZ/CZ/PZ-M,-H,-24,-2H m ± im IE 4Î V rrm V rsm V r dc V drm V dsm V d ( dc) fE •§• It ( rms) It ( av ) Itsm l?t d i/d t Pgm Pg ( av ) V fgm V rgm Ifgm Tj Tstg Viso - m g fc J -*# # à S U ÎW Œ
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TM200DZ/CZ/PZ-M
E80276
E80271
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EFT 373
Abstract: D25F10 DBF20E dbf40b DBF40TC DBC10G DBF10E DBF20B DBF20C DBF20G
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-60
DD25F-80
DD30GB-40
DD30GB-80
DD30HB-120
EFT 373
D25F10
dbf40b
DBF40TC
DBF10E
DBF20B
DBF20G
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AF239
Abstract: germanium-pnp-mesa-hf-transistor AF 239
Text: 'W Nicht für Neuentwicklungen Not for new developments AF 239 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixe r and o scilla to r stages up to 900 MHz
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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MZMA
Abstract: DD25F EFT 308 STM-231 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
23D30GB-40
DD30GB-80
DD30HB-120
DD30HB-160
DD40F-100
MZMA
DD25F
EFT 308
STM-231
DBF10E
DBF20B
DBF20G
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fagor 2FEP
Abstract: HVR062 Fagor 1005 fagor fb 5001 DO-201AD fagor 2fbp HVR4-10 fagor B D0G0A44 hvr3
Text: S7E D FAGOR n w w n • BMSTBES □□□07S1 DMT « F G R S FAfiOR ELECTRONICS Voltage 10.000 V. Current 450 mA • Low cost • Diffused junction • High current capability • The plastic material carries U/L recognition 94 V-0 • Terminals: Axial Leads
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34S132S
HVR4-10
C2-17
DO-201AD
DO-27A
DO-201AE
fagor 2FEP
HVR062
Fagor 1005
fagor fb 5001
fagor 2fbp
HVR4-10
fagor B
D0G0A44
hvr3
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