M29W320DT
Abstract: M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
|
Original
|
M29W320DT
M29W320DB
TSOP48
TFBGA63
TFBGA48
M29W320DT
M29W320D
M29W320DB
TFBGA48
|
PDF
|
M29DW323D
Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
|
Original
|
M29DW324DT
M29DW324DB
TSOP48
M29DW323D
TSOP48 outline
M29DW323DB
M29DW323DT
M29DW324D
M29DW324DB
M29DW324DT
|
PDF
|
M29W640DB
Abstract: M29W640D M29W640DT A0-A21 6A000
Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns
|
Original
|
M29W640DT
M29W640DB
TSOP48
TFBGA63
M29W640DB
M29W640D
M29W640DT
A0-A21
6A000
|
PDF
|
STMicroelectronics NAND256W3A
Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
|
Original
|
NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
STMicroelectronics NAND256W3A
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
WSOP48
|
PDF
|
M29DW324D
Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
|
Original
|
M29DW324DT
M29DW324DB
TSOP48
16Mbit
16Mbit
TFBGA63
M29DW324D
M29DW324DB
M29DW324DT
TFBGA48
TFGBA48
|
PDF
|
rj11 4pin connector to db9 female connector
Abstract: OSC008 BTC 139 C04310 Raltron Electronics C04310 ERJ-2GEJ472X b24 b03 so-8 Xilinx XC2S150E TJA1041 SOIC14 A10 sot23-5
Text: ADSP-BF537 EZ-KIT Lite Evaluation System Manual Revision 1.1, August 2005 Part Number 82-000865-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2005 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written
|
Original
|
ADSP-BF537
LED10)
rj11 4pin connector to db9 female connector
OSC008
BTC 139
C04310
Raltron Electronics C04310
ERJ-2GEJ472X
b24 b03 so-8
Xilinx XC2S150E
TJA1041 SOIC14
A10 sot23-5
|
PDF
|
OSC008
Abstract: usb to rj45 extenders AD1871 SW6 FLASH Enable Switch A10 sot23-5 ADSP-BF537 modular plug Tyco RJ45 RJ11 4pin A46 sot CON033
Text: ADSP-BF537 EZ-KIT Lite Evaluation System Manual Revision 2.0, June 2006 Part Number 82-000865-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2006 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written consent
|
Original
|
ADSP-BF537
OSC008
usb to rj45 extenders
AD1871
SW6 FLASH Enable Switch
A10 sot23-5
modular plug Tyco RJ45
RJ11 4pin
A46 sot
CON033
|
PDF
|
IS1651
Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
|
Original
|
M29DW323DT
M29DW323DB
24Mbit
IS1651
M29DW323D
M29DW323DB
M29DW323DT
TFBGA48
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
|
Original
|
M29W640FT
M29W640FB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
|
Original
|
M29DW640D
TSOP48
24Mbit
TFBGA63
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29W640FT M29W640FT 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
|
Original
|
M29W640FT
M29W640FT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read ■ – VPP =12 V for Fast Program (optional) ACCESS TIME: 90 ns
|
Original
|
M29W640DT
M29W640DB
TSOP48
TFBGA63
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE
|
Original
|
M29DW640D
TSOP48
24Mbit
TFBGA63
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
|
Original
|
M29DW640D
24Mbit
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
|
Original
|
M29DW323DT
M29DW323DB
24Mbit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
|
Original
|
M29DW640D
TSOP48
24Mbit
TFBGA63
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
|
Original
|
M29DW324DT
M29DW324DB
TSOP48
16Mbit
16Mbit
TFBGA63
|
PDF
|
M29DW323D
Abstract: M29DW323DB M29DW323DT
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
|
Original
|
M29DW323DT
M29DW323DB
TSOP48
M29DW323D
M29DW323DB
M29DW323DT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access time: 70, 90ns
|
Original
|
M29W320DT
M29W320DB
2Mbx16,
|
PDF
|
C4858
Abstract: No abstract text available
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
|
Original
|
NAND128-A
NAND256-A
128-Mbit
256-Mbit,
528-byte/264-word
256-Mbit
32-Mbit
C4858
|
PDF
|
VFBGA63
Abstract: NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand
Text: NAND01G-B NAND02G-B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Feature summary ● ● ● ● ● ● ● High Density NAND Flash memories – Up to 2 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass
|
Original
|
NAND01G-B
NAND02G-B
Byte/1056
64Mbit
VFBGA63
TFBGA63
TSOP48
NAND01GW3B
NAND01GW4B
NAND01G-B
NAND01GR3B
NAND01GR4B
NAND02G-B
FBGA63
NAND02GR3B2A
st nand
|
PDF
|
TSOP48 outline
Abstract: cons EMC2112 M29DW323 M29DW324 M29DW640D TFBGA48
Text: FLASH NOR HIGH DENSITY & CONSUMER M29DWxxx FAMILY Multiple Bank May, 2004 HD & Cons. Division -VAM29DW.ppt – ptfl0402-504 STMicroelectronics www.st.com/flash Family Overview ¾Densities from 32Mb to 64Mb ¾Wide application area covered ¾0.15µm process technology
|
Original
|
M29DWxxx
-VAM29DW
ptfl0402-504
M29DW
ptfl0402-504-
M29DW323
2Mbx16)
TSOP48 outline
cons
EMC2112
M29DW323
M29DW324
M29DW640D
TFBGA48
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P-TFBGA63-0911-0.80AZ
|
OCR Scan
|
|
PDF
|
P-TFBGA63
Abstract: P-TFBGA63-0911-0
Text: P—TFBGA63—0911—0.80AZ Uniti nn Jun.2003
|
OCR Scan
|
TFBGA63â
P-TFBGA63
P-TFBGA63-0911-0
|
PDF
|