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    Adapter

    Abstract: FSP090-DMCB1
    Text: SPARKLE POWER INT’L LTD. SPI FSP090-DMCB1 CEC Adapter 19V@4.74A San Jose Office 1000 Rock Ave. San Jose, CA 95131 TEL: (408) 519-8888 FAX: (408) 519-9999 L.A. Office 17071 Green Drive City of Industry, CA 91745 TEL: (626) 839-7180 FAX: (626) 839-3395 9/9/2008


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    PDF FSP090-DMCB1 ESD08025315-R3 Adapter FSP090-DMCB1

    Adapter

    Abstract: No abstract text available
    Text: SPARKLE POWER INT’L LTD. SPI FSP036-RAC 12V@3A CEC Level V Adapter Power Supply San Jose Office 1000 ROCK AVE. SAN JOSE, CA 95131 TEL: (408) 519-8888 FAX: (408) 519-9999 ATTN: SALES DEPT. L.A. Office 17071 Green Drive City of Industry, CA 91745 TEL: (626) 839-1124


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    PDF FSP036-RAC ESD08072645-R1 Adapter

    PF0210

    Abstract: BO 829 DSA003712 RX852 hitachi hd
    Text: PF0210 MOS FET Power Amplifier Module for ADC Mobile Phone ADE-208-102E Z Preliminary 6th Edition July 1996 Features • High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK • Low input power: 0 dBm ave. Typ for π /4-DQPSK • Simple bias circuit • High speed switching: 8 µs Typ


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    PDF PF0210 ADE-208-102E BL01RN1-A62-001 PF0210 BO 829 DSA003712 RX852 hitachi hd

    Untitled

    Abstract: No abstract text available
    Text: Representatives Europe Representatives Turkey United Kingdom ERDA elektronik sanayi veticaret a.s. Garanti Koza Evleri Visne 1 Mah.2. SokakNo.1 80936 Zekeriyakoy–Istanbul Tel: 90 212 202 6318 Fax: 90 212 202 6307 BCD Microelectronics Ltd. 3 Station Road,


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    PDF

    IS-136

    Abstract: TQ7M51
    Text: WIRELESS COMMUNICATIONS DIVISION GND 6 1 TQ7M51 BIAS CONTROL GND 2 5 RF OUTPUT RF INPUT 3 4 GAIN CONTROL DATA SHEET 3V HBT Variable Gain DRIVER AMPLIFIER Features High Linearity High output intercept 40 to 50 dB toggled gain range Product Description: Single +3.0V operation


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    PDF TQ7M51 TQ7M51 IS-95, IS-136 TQ7M51is

    diode 3053

    Abstract: 0.5 MIETEC diode DIN-9141 MTC-3053 Automotive ECU IC diode c2s DIN914 mietec CI 3053 diagram tester ecu
    Text: MTC-3053 Dual DIN-9141 Interface Data Sheet Preliminary Application Specific Standard Products Description Features • Dual physical interface for ISO/DIN 9241 diagnostic bus • Fully independant K and L channels • Short circuit protected • Integration protection against


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    PDF MTC-3053 DIN-9141 MTC-3053 diode 3053 0.5 MIETEC diode Automotive ECU IC diode c2s DIN914 mietec CI 3053 diagram tester ecu

    8V32

    Abstract: b2800 MTC30 din forge
    Text: MTC-3053 Dual DIN-9141 Interface Data Sheet Application Specific Standard Products Description Features • Dual physical interface for ISO/DIN 9141 diagnostic bus • Fully independant K and L channels • Short circuit protected • Integration protection against


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    PDF MTC-3053 DIN-9141 MTC-3053 0186b 8V32 b2800 MTC30 din forge

    Untitled

    Abstract: No abstract text available
    Text: 824 - 849 MHz REMEC Hybrid Amplifiers High Dynamic Range Electrical Specifications 1 : Parameter Specification Limit Temperature Frequency Range Small Signal Gain Gain vs. Temperature Gain Flatness Reverse Isolation VSWR Input Output 1 dB Compression Output Intercept Point


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    PDF QBH-867

    Untitled

    Abstract: No abstract text available
    Text: UG432S6448JPG Data sheets can be downloaded at www.unigen.com 256M Bytes 32M x 64 bits SYNCHRONOUS DRAM MODULE PC100 sTSOP SDRAM Unbuffered SODIMM based on 16 pcs 16M x 8 SDRAM with LVTTL, 4 banks & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)


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    PDF UG432S6448JPG PC100 UG432S6448JPG-PL/PH 32Mbits 144-Pin

    Untitled

    Abstract: No abstract text available
    Text: 824 - 849 MHz REMEC Hybrid Amplifiers Low Noise Figure Electrical Specifications 1 : Parameter Specification Limit Temperature Frequency Range Small Signal Gain Gain vs. Temperature Gain Flatness Reverse Isolation VSWR Input Output 1 dB Compression Output Intercept Point


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    PDF QBH-8720

    DA6501

    Abstract: TSSOP-16
    Text: DA6501.001 27 October 2008 MAS6501 This is preliminary information on a new product under development. Micro Analog Systems Oy reserves the right to make any changes without notice. 16-Bit Analog-to-Digital Converter • Standby Current Consumption 0.1 µA


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    PDF DA6501 MAS6501 16-Bit MAS6501 TSSOP-16

    TSSOP-16

    Abstract: DA65
    Text: DA6501.001 11 November, 2010 MAS6501 This is preliminary information on a new product under development. Micro Analog Systems Oy reserves the right to make any changes without notice. 16-Bit Analog-to-Digital Converter • Standby Current Consumption 0.1 µA


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    PDF DA6501 MAS6501 16-Bit MAS6501 TSSOP-16 DA65

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Multilayer Ceramic Capacitors SMD MLCCs for High Power Applications CBR Series, C0G Dielectric, Ultra High Q, Low ESR, 6.3 – 500 VDC (RF & Microwave) Overview KEMET’s CBR Series surface mount multilayer ceramic capacitors (MLCCs) in C0G dielectric feature a robust and


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    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Multilayer Ceramic Capacitors SMD MLCCs for High Power Applications CBR Series, C0G Dielectric, Ultra High Q, Low ESR, 6.3 – 500 VDC (RF & Microwave) Overview KEMET’s CBR Series surface mount multilayer ceramic capacitors (MLCCs) in C0G dielectric feature a robust and


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    25C829

    Abstract: 850C TQM713024 28dBm
    Text: TQM713024 Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Features Functional Block Diagram • InGaP HBT Technology • High Efficiency: 38% @ 28dBm • Capable of running as 0-bit PA in low bias mode to 28dBm • Supports new chipsets with Vref@2.6V


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    PDF TQM713024 28dBm TQM713024 IS-95/98/x: 25C829 850C 28dBm

    B705

    Abstract: B705A B402 D-71083 80KHZ
    Text: XDSL SPLITTER FILTER MODULE SmartER series ISDN CO splitter for standard ADSL / VDSL2 applications LPF compliant with ETSI specification TS 101-952-1-3, v1.1.1 for both 2B1Q and 4B3T applications Part of a standard series which has footprint compatibility


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    PDF 80kHz 40kHz 40kHz 60kHz 60kHz B705 B705A B402 D-71083 80KHZ

    AMI+729/829

    Abstract: No abstract text available
    Text: Surface Mount Multilayer Ceramic Capacitors SMD MLCCs for High Power Applications CBR Series, C0G Dielectric, Ultra High Q, Low ESR, 6.3 – 500 VDC (RF & Microwave) Overview KEMET’s CBR Series surface mount multilayer ceramic capacitors (MLCCs) in C0G dielectric feature a robust and


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    PDF

    839 transistor

    Abstract: No abstract text available
    Text: EVERBOUQUET INTERNATIONAL CO., LTD. EVER CATCHER GROUP WE CATCH THE BEST TECH. FOREVER                                                  


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    6026

    Abstract: No abstract text available
    Text: EVERBOUQUET INTERNATIONAL CO., LTD. EVER CATCHER GROUP WE CATCH THE BEST TECH. FOREVER                                                   


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    PDF MC160M-S MC1602M-S 6026

    CSB 503

    Abstract: 1000ah battery bv 643 abs 0812 1000AH E88637
    Text: Powered by MSV 1000 2V 1000Ah MSV 1000 is a long service life battery up to 15 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit


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    PDF 1000Ah 10hr-rate 02/Cell CSB 503 1000ah battery bv 643 abs 0812 1000AH E88637

    500Ah

    Abstract: No abstract text available
    Text: Powered by MSV 500 2V 500Ah MSV 500 is a long service life battery up to 15 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit Voltage Per Unit


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    PDF 500Ah 10hr-rate 02/Cell 500Ah

    Untitled

    Abstract: No abstract text available
    Text: TQM713024 Preliminary Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Features Functional Block Diagram • InGaP HBT Technology • High Efficiency: 38% @ 28dBm • Capable of running as 0-bit PA in low bias mode to 28dBm • Supports new chipsets with Vref@2.6V


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    PDF TQM713024 28dBm TQM713024 today00

    Untitled

    Abstract: No abstract text available
    Text: OPA5723YGO Yellow Green LED Chip GaAs/AlGaInP Ultra Bright 1. Material Substrate GaAs N Type Epitaxial Layer AlGaInP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF


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    PDF OPA5723YGO 100um

    Untitled

    Abstract: No abstract text available
    Text: UNITED STATES INTERNATIONAL NEW ENG LAND/ KANSAS/MISSOURI/ AUSTRALIA JAPAN UPSTATE NEW Y ORK NEBRASKA Advanced Technology Marketing Tel: 508 458-0200 Fax: (508) 458-7990 Central Tech Sales Tel: (314) 831-4069 Fax: (314) 839-4686 Electronic Development Sales Pty.,


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