Untitled
Abstract: No abstract text available
Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns
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BS616LV2016
x8/x16
II-44
R0201-BS616LV2016
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PDF
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Untitled
Abstract: No abstract text available
Text: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns
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BS62LV1600
115mA
R0201-BS62LV1600
220uA
100uA
110uA
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PDF
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123401
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29LV065U32SJ08-XX 32MB FLASH SIMM, based on AMD Am29LV065D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29LV065U32SJ08-XX is a Flash Memory SIMM, composed of four 64Mbit CMOS flash memories, each organized as 8M X 8 bits mounted on a substrate
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AVEF29LV065U32SJ08-XX
Am29LV065D
AVEF29LV065U32SJ08-XX
64Mbit
80-pin
120ns
123401
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PDF
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AS8S512K3
Abstract: No abstract text available
Text: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface
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AS8S2M32PEC
2Mx32
M0-47AE
AS8S2M32
AS8S2M32PEC
AS8S512K3
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PDF
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HIP-66
Abstract: No abstract text available
Text: FLASH AS8FLC1M32 FIGURE 1: PIN ASSIGNMENT Top View Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array Available via Applicable Specifications: • MIL-PRF-38534, Class H FEATURES • • • • • • • • • • • •
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AS8FLC1M32
MIL-PRF-38534,
64Kbyte
1Mx32,
AS8FLC1M32B
HIP-66
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PDF
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MICRON BGA PART MARKING
Abstract: No abstract text available
Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate
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288Mb:
MT49H32M9
MT49H16M18
MT49H8M36
09005aef80a41b46/Source:
09005aef809f284b
MICRON BGA PART MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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PDF
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SMV512K32-SP
Abstract: No abstract text available
Text: SMV512K32-SP SLVSA21C – JUNE 2011 – REVISED OCTOBER 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial
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SMV512K32-SP
SLVSA21C
16-Mb
20-ns
5e-17
SMV512K32-SP
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PDF
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M29W320DT
Abstract: M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
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M29W320DT
M29W320DB
TSOP48
TFBGA63
TFBGA48
M29W320DT
M29W320D
M29W320DB
TFBGA48
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PDF
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AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm
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Am29F016D
Am29F016
Am29F016B
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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PDF
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A29L008
Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Text: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:
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A29L008
KbyteX15
SA10
SA11
SA12
SA13
SA14
SA15
SA16
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PDF
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MCR 100-6
Abstract: IP82C52 MCR 100-6 P M82C52 80C86 82C52 CP82C52 CS82C52 IS82C52
Text: 82C52 TM CMOS Serial Controller Interface March 1997 Features Description • • • • The Intersil 82C52 is a high performance programmable Universal Asynchronous Receiver/Transmitter UART and Baud Rate Generator (BRG) on a single chip. Utilizing the Intersil advanced Scaled SAJI IV CMOS process, the 82C52 will
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Original
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82C52
82C52
16MHz
RS-232-C
8432Mgranted
MCR 100-6
IP82C52
MCR 100-6 P
M82C52
80C86
CP82C52
CS82C52
IS82C52
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PDF
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a29040al-70
Abstract: A29040A-55 A29040A A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064
Text: A29040A Series 512K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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Original
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A29040A
a29040al-70
A29040A-55
A29040A-70
A29040AL
A29040AL-55
A29040AV-55
IN3064
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PDF
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T-78
Abstract: No abstract text available
Text: ! "#$ %&' !* +"#$,%&',()!* -./ 01)2345 06781 ! 9:;<=>?@A 78)!
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am29f400bb
Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Original
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
am29f400bb v
am29f400 known good
AM29F400B7
20185
AM29F400BT
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PDF
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NS41024S25
Abstract: NS41024S25E-SMD PDM41024W 5962-8959837MMA
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S25-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S25 is a high performance, standard power version CMOS static RAM organized as
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MDNS41024S25-X
NS41024S25
NS41024
NS41024S25
NS41024S25E-SMD
PDM41024W
5962-8959837MMA
MIL-STD-883,
MIL-STD-88341024
NS4A024
NS41024S25E-SMD
PDM41024W
5962-8959837MMA
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PDF
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NS41024S45
Abstract: NS41024S45E-SMD PDM41024W
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S45-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S45 is a high performance, standard power version CMOS static RAM organized as
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MDNS41024S45-X
NS41024S45
NS41024
NS41024S45
NS41024S45E-SMD
PDM41024W
5962-8959835MMA
MIL-STD-883,
MI41024
NS4A024
NS41024S45E-SMD
PDM41024W
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PDF
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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PDF
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UC62LV4096
Abstract: No abstract text available
Text: Low Power CMOS SRAM 256K X 16 UC62LV4096 -55/-70 Description Features: • Vcc operation voltage : 1.5 V~ 3.6V • Low power consumption : 35mA Max. operating current 2uA (Typ.) CMOS standby current • High Speed Access time : 70ns (Max.) at Vcc = 1.5V
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UC62LV4096
UC62LV4096
current21
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PDF
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TE28F640J3C-120
Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective
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28F128J3,
28F640J3,
28F320J3
x8/x16)
32-Byte
128-bit
--64-bit
High-Densi8/x16
56-Lead
TE28F640J3C-120
TE28F128J3C-120
INTEL 28F320J3
28F128J3
28F256K18
TE28F320J3C110
28F320J3
RC28F640J3C-120
28F640J3
28F640J3 reliability
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PDF
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PSD813F2-90U
Abstract: HATTELAND intel 80196 microcontroller WSI PSD 813 WSI PSD813F ZPSD813F1-90J 80C251 PSD813F PSD813F1 PSD813F2
Text: PSD813F Family PSD813F ZPSD813F ZPSD813FV Flash In-System-Programmable Microcontroller Peripherals July, 2000 Preliminary 47280 Kato Road, Fremont, California 94538 Tel: 510-656-5400 Fax: 510-657-8495 800-TEAM-WSI 800-832-6974 Web Site: http://www.waferscale.com
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PSD813F
ZPSD813F
ZPSD813FV
800-TEAM-WSI
PSD813F2-90U
HATTELAND
intel 80196 microcontroller
WSI PSD 813
WSI PSD813F
ZPSD813F1-90J
80C251
PSD813F1
PSD813F2
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PDF
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smd UJ
Abstract: CDFP4-F28 GDIP1-T28 SMD MARKING CODE sdp
Text: DATE DESCRIPTION LTR APPROVED YR-Ho-PA A A d d e d case ou t l i n e le t t e r U t o the drawing. Re m o v e d E S D S r e q u i r e m e n t s froit; drawing. E d i t o r i a l c h an ge s th roughout. 90 -0 1- 26 ' M. A. Frye B R e m o v e d "D e l a y to n e x t wr i t e " \tDVWL, t DV£L) test
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OCR Scan
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BUL-103.
MIL-BUL-103
00X07^
smd UJ
CDFP4-F28
GDIP1-T28
SMD MARKING CODE sdp
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PDF
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NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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OCR Scan
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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PDF
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s29f
Abstract: No abstract text available
Text: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '
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OCR Scan
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TMS29F040
4194304-BIT
29LF040/
29VF040
ComJS820A
R-PDSO-G32)
s29f
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PDF
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