Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55B4256J-12/15/20 SILICON GATE BiCMOS 262,144 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B4256J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V supply. Toshiba’s BiCMOS technology and advanced circuit design enable high speed operation.
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TC55B4256J-12/15/20
TC55B4256J
400mil
28-pin
B-108
TDT724fl
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TC55257
Abstract: tc51832fl-10 tc51832fl 128X8 A12C TC51832 TC51832F TC51832P TC51832PL-10 TC51832SPL-10
Text: ,_ J TOS H IB A : _ L O G I C / M E M O R Y 4SE D • llg r iHii ^0^7246 D025D11 32,768 WORD x 8 BIT CMOS PSEUDO STATIC RAM □ ■TOSS* - - iDESCRIPTIONl The TC51832 Family is a 256K bit high-speed CMOS Pseudo-Static RAM organized as 32,768
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D025D11
TC51832
TC51832SP-85,
TC51832SPL-85
TC51832SP-10,
TC51832SPL-10
TC51832SP-12,
TC51832SPL-12
TC55257
tc51832fl-10
tc51832fl
128X8
A12C
TC51832F
TC51832P
TC51832PL-10
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TCFT 1103
Abstract: TC5116400J A173 TC511640J A10RC TCWU
Text: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC5116400J/FT-60/70
TC5116400J/FT
TC5116400J/FT.
1M516DRAM.
TCFT 1103
TC5116400J
A173
TC511640J
A10RC
TCWU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC554161FTL-70L/85L PRELIMINARY SILICON GATE CMOS 262,144 WORD x 16 BIT STATIC RAM Description TheTC554161FTL is a 4,194,304 bit static random access memory organized as 262,144 words by 16 bits using CMOS technol ogy, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features
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TC554161FTL-70L/85L
TheTC554161FTL
10mA/MHz
TC554161FTL
SR04020795
TSOP54-P-400
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BST60
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5117400BSJ/BST-60/70
TC5117400BSJ/BST
300mil)
DR16040794
00E7t
SOJ26-P-300C)
BST60
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551001B Pl/B Fl/B FTI/BTRI-85V/10V PRELIMINARY SILICON GATE CMOS 131,072 WORD X 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,
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TC551001B
FTI/BTRI-85V/10V
TC551001BPL
TC551001
SR01050995
TC551001BPl/B
TSOP32-P-0820
i724fl
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TC55257BFL
Abstract: TC55257BFTL TC55257BPL TC55257BSPL TC55257BTRL
Text: TOSHIBA TC55257BPlVBFL/BSPiyBFIl/BTRL85L/10L LV SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM D e s c rip tio n The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of
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TC55257BPL/BFL/BSPL/BFTL/BTRL-85L/
TC55257BPL
100pF
TC55257BFL
TC55257BFTL
TC55257BSPL
TC55257BTRL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM362020AS/ASG -60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362020A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 16 TC514400ASJ devices and 8 TC511000BJ/AJ devices on the printed circuit board. This module can be used as
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THM362020AS/ASG
THM362020A
TC514400ASJ
TC511000BJ/AJ
THM362020AS/ASG
THM362020AS/ASG-60
THM362020AS/ASG-70
TC514400ASJ
TC511000BJ
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC514800AJL/AFHr70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJL/AFTL is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJL/AFTL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC514800AJL/AFHr70/80
TC514800AJL/AFTL
D02S535
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