TD DIODE Search Results

TD DIODE Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

TD DIODE Price and Stock

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Teledyne Coax Switches CCR-38S260-TDS RF Switch Commercial - 50 Ohms - 15VDC Coil - DC-18GHz - Normally-Open - SP6T - SMA-Female - Opt: TTL-Drivers+Diodes D-Sub
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	CCR-38S260-TDS		3			1 $584.92 10 $562.71 100 $562.71 1000 $562.71 10000 $562.71	Buy Now
Teledyne Coax Switches CCR-38S14C-TD RF Switch Commercial - 50 Ohms - 28VDC Coil - DC-18GHz - Normally-Open - SP4T - SMA-Female - Opt: Indicator-Contacts Decoders+TTL-Drivers+Diodes
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	CCR-38S14C-TD		3			1 $650.18 10 $625.49 100 $625.49 1000 $625.49 10000 $625.49	Buy Now
onsemi SB10-05P-TD-E Rectifier Diode Schottky 50V 1A 10ns 4-Pin(3+Tab) SOT-89 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	SB10-05P-TD-E					1 - 10 - 100 - 1000 $0.2252 10000 $0.2045	Buy Now
Teledyne Coax Switches CR-38S260-TD RF Switch Elite DC-22GHz SMA Failsafe SP6T TTL Diodes
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	CR-38S260-TD					1 $870.55 10 $754.46 100 $754.46 1000 $754.46 10000 $754.46	Buy Now
Teledyne Coax Switches CR-38S14C-TD RF Switch Elite DC-22GHz SMA Failsafe SP4T Indicator TTL Diode
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	CR-38S14C-TD					1 $789.42 10 $684.62 100 $684.62 1000 $684.62 10000 $684.62	Buy Now

TD DIODE Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TD-DIODE-1000		Telcodium	Power Supplies - Board Mount - Accessories - TELCODIUM IDEAL DIODE BRIDGE HEM		Original	PDF

TD DIODE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CPC1590 Optically Isolated Gate Driver INTEGRATED CIRCUITS DIVISION Driver Characteristics Description Parameter Rating Units Input Current 2.5 mA Switching Speed IF=5mA, MOS Input Capacitance=4nF td(on) 12 td(off1) (VGS=2V) 125 td(off2) (VGS=1V) 210 s	Original	PDF	CPC1590 3750Vrms CPC1590 DS-CPC1590-R01
led lifespan Abstract: No abstract text available Text: CPC1590 Optically Isolated Gate Driver INTEGRATED CIRCUITS DIVISION PRELIMINARY Driver Characteristics Description Parameter Rating Units Input Current 2.5 mA Switching Speed IF=5mA, MOS Input Capacitance=4nF td(on) 12 td(off1) (VGS=2V) 125 td(off2) (VGS=1V)	Original	PDF	CPC1590 CPC1590 DS-CPC1590-R00C led lifespan
1838 t Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485 Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf	Original	PDF	IRGPH50MD2 C-481 1838 t 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
D-10 Abstract: IRGPH50MD2 1838t Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf	Original	PDF	IRGPH50MD2 C-481 D-10 IRGPH50MD2 1838t
IRGBC20FD2 Abstract: D-12 T4 diode 18-A Text: IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce td off D.U.T. tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt	Original	PDF	IRGBC20FD2 O-220AB C-100 IRGBC20FD2 D-12 T4 diode 18-A
IRGBC20FD2 Abstract: diode 18b diode 18C D-12 DIODE T4 T4 DIODE diode c100 18-A Text: IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce td off D.U.T. tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt	Original	PDF	IRGBC20FD2 O-220AB C-100 IRGBC20FD2 diode 18b diode 18C D-12 DIODE T4 T4 DIODE diode c100 18-A
rl 724 n Abstract: 1SV202 1SV202BWT OF VR 10K Text: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Low matching error. DESCRIPTION PIN High capacitance ratio. n=6.3min Low series resistance. (rs=0.57Ω) 1 Cathode 2 Anode 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol	Original	PDF	1SV202BWT OD-523 OD-523 rl 724 n 1SV202 1SV202BWT OF VR 10K
SEMTECH MARKING Abstract: 1SV202BWT rl 724 n Text: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Low matching error. DESCRIPTION PIN High capacitance ratio. n=6.3min Low series resistance. (rs=0.57Ω) 1 Cathode 2 Anode 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol	Original	PDF	1SV202BWT OD-523 OD-523 SEMTECH MARKING 1SV202BWT rl 724 n
1SV202BWT Abstract: 1SV202 Text: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE PINNING FEATURES DESCRIPTION PIN • Low matching error • High capacitance ratio n = 6.3 min 1 Cathode 2 Anode • Low series resistance (rs = 0.57 Ω) 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol	Original	PDF	1SV202BWT OD-523 OD-523 1SV202BWT 1SV202
1SV202 Abstract: 1SV202BWT Text: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE PINNING FEATURES DESCRIPTION PIN • Low matching error • High capacitance ratio n = 6.3 min 1 Cathode 2 Anode • Low series resistance (rs = 0.57 Ω) 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol	Original	PDF	1SV202BWT OD-523 OD-523 1SV202 1SV202BWT
IRF7101 Abstract: MS-012AA Text: IRF7204PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage	Original	PDF	IRF7204PbF EIA-481 EIA-541. IRF7101 MS-012AA
IRF7101 Abstract: No abstract text available Text: IRF7306PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage	Original	PDF	IRF7306PbF EIA-481 EIA-541. IRF7101
Untitled Abstract: No abstract text available Text: IRF7303QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage	Original	PDF	IRF7303QPbF EIA-481 EIA-541.
314P Abstract: EIA-541 IRFL014 TO-261AA Package Text: IRLL014PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage	Original	PDF	IRLL014PbF Intern13) EIA-481 EIA-541. EIA-418-1. 314P EIA-541 IRFL014 TO-261AA Package

Untitled Abstract: No abstract text available Text: SILICON MONOLITHIC TD62386AP/AF TD62387AP/AF TD62388AP/AF BIPO LAR DIGITAL INTEGRATED CIRCUIT 8 CH LOW INPUT ACTIVE DARLINGTON SINK DRIVER T h e T D 62386A P, TD 62386AF, TD 62387A P, TD 62 38 7 A F an d T D 62388A P, TD 62388A F are no n -in vertin g tran sistor	OCR Scan	PDF	TD62386AP/AF TD62387AP/AF TD62388AP/AF 2386A 62386AF, 2387A 2388A
TD52 Abstract: No abstract text available Text: DIGITALLY CONTROLLED PIN-DIODE FREQUENCY TRANSLATORS SERIES TD GENERAL INFORMATION: KDI/Triangle's Series TD digitallycontrolled frequency translators are designed for serrodyning applications. The devices have low amplitude modulation, high linearity, and fast fly-back time, which produces superior carrier	OCR Scan	PDF	DB-25P TD-52 TD-48 TD52
Untitled Abstract: No abstract text available Text: TO S H IBA TD 62381 P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT TD 6 2 3 8 1 P, TD SILICON MONOLITHIC 62381F 8CH LOW SATURATIO N SIN K DRIVER The TD62381P and TD62381F are comprised of eight NPN low saturation drivers. These devices are specifically designed for multiplexed digit driving of eight digit	OCR Scan	PDF	62381F TD62381P TD62381F TD62785P TD62785F 500mA /500mA DIP18-P-300-2 OP18-P-375-1
Untitled Abstract: No abstract text available Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C	OCR Scan	PDF	IXSK35N120AU1 O-26re IXSK35N120AU1
jvv diode Abstract: IXDN 50N120AU1 50N120AU1 IXDN50N120AU1 0504N Text: □ IXYS High Voltage IGBT with Diode IXDN 50N120AU1 V CES 1200 V ^C25 70 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 1200 V V CGR Td = 25°C to 150°C; RGE = 1 M£i	OCR Scan	PDF	50N120AU1 OT-227 jvv diode IXDN 50N120AU1 IXDN50N120AU1 0504N
smd diode 819 Abstract: rg33c Text: Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode V CES ^C25 V CE sat Combi Pack ^fi ?C = = = = 600 V 60 A 2.5V 80 ns G OE Symbol TestConditions v CES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 Mil 600 V VGES	OCR Scan	PDF	IXGH32N60BU1 IXGH32N60BU1S T0-247 O-247 smd diode 819 rg33c
Untitled Abstract: No abstract text available Text: □ IXYS Advanced Technical Information IXGH 31N60D1 IXGT 31N60D1 Ultra-LowVCE sat IGBT with Diode V CES = 600 V = 60 A = 1.7 V ^C25 V CE(sat) Combi Pack Symbol Test Conditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i	OCR Scan	PDF	31N60D1 O-268 GES12
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information Ultra-LowVCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B V CES = 600 V = 40 A = 2.0 V ^C25 V CE(sat) Combi Pack Symbol TestConditions v CES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES	OCR Scan	PDF	28N60B O-268
P 1010 Abstract: AL 102 074d Text: □IXYS Advanced Technical Information IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 package ^fi typ Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads	OCR Scan	PDF	40N60BD1 PLUS247â O-247 P 1010 AL 102 074d
Untitled Abstract: No abstract text available Text: TD E1890 TD E1891 2A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH • ■ ■ ■ ■ ■ ■ . ■ . ■ 2A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE INTERNAL CURRENT LIMITING THERMAL SHUTDOWN OPEN GROUND PROTECTION INTERNAL NEGATIVE VOLTAGE CLAMPING	OCR Scan	PDF	E1890 E1891 TDE1890/1891 ATT11 TT11V TDE1891L TDE180

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TD DIODE Search Results

TD DIODE Result Highlights (5)

TD DIODE Price and Stock

Teledyne Coax Switches CCR-38S260-TDS

Teledyne Coax Switches CCR-38S14C-TD

onsemi SB10-05P-TD-E

Teledyne Coax Switches CR-38S260-TD

Teledyne Coax Switches CR-38S14C-TD

TD DIODE Datasheets (1)

TD DIODE Datasheets Context Search

Untitled

led lifespan

1838 t

D-10

IRGBC20FD2

IRGBC20FD2

rl 724 n

SEMTECH MARKING

1SV202BWT

1SV202

IRF7101

IRF7101

Untitled

314P

Untitled

TD52

Untitled

Untitled

jvv diode

smd diode 819

Untitled

Untitled

P 1010

Untitled