MWS5101
Abstract: MWS5101AEL3 CDP1822 MWS5101A MWS5101ADL3 MWS5101AEL2 MWS5101AEL3X MWS5101DL3X MWS5101EL2 MWS5101ELS
Text: MWS5101, MWS5101A 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Industry Standard Pinout The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and
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MWS5101,
MWS5101A
256-Word
MWS5101
MWS5101A
MWS5101AEL3
CDP1822
MWS5101ADL3
MWS5101AEL2
MWS5101AEL3X
MWS5101DL3X
MWS5101EL2
MWS5101ELS
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Untitled
Abstract: No abstract text available
Text: T O S H IB A INTEGRATED CIRCUIT D IG IT A L IN T E G R A T E D T C 5 2 3 1 2 5 A ? / A J - 10 T O S H IB A TECHNICAL DATA S IL IC O N GATc C S C JIT , T C 5 2 8 1 2 S A ? / A J - 12 CM O S P R E L IM IN A R Y 131 , Q72 W O R D S x SB II S M U L T iP O R T D R A M
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072-words
trans00
TC528126AP/
TC32812SAP/
TCS2S12SAP/AJ
TC528126AP/AJ-A0
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PDF
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RCA-MWS5101
Abstract: MWS5101
Text: ^ 22 21 20 Id 16 17 16 15 14 13 12 TOP V‘ EW — — — — — — — — — — — V 0D A4 R/W Ê3T 0 .0 . CS2 004 014 003 0 13 002 9 2 C S -2 99 7 6R I T E R M IN A L ASSIGNMENT 256-Word by 4-Bit LSI Static Random-Access Memory Features: • In d u s try standard pin o u t
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MWS5101
256-Word
RCA-MWS5101
MWS5101.
E--11
MWS5101
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CDP1822
Abstract: CDP1822D CD182 CDP1822CD CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822E CDP1822EX
Text: CDP1822, CDP1822C S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static
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CDP1822,
CDP1822C
256-Word
CDP1822
CDP1822C
CDP1822.
CDP1822D
CD182
CDP1822CD
CDP1822CDX
CDP1822CE
CDP1822CEX
CDP1822E
CDP1822EX
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PDF
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CDP1822
Abstract: No abstract text available
Text: ¡HI HARRIS CDP1822 822 S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1ns.8mA The CDP1822 and CDP1822C are 256-word by 4-bit static
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CDP1822
256-Word
CDP1822C
CDP1822.
these10
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2N4839
Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i
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2N3789
2N3713
2N3790
2N3714
2N3791
2N3715
2N3792
050-H
O-107
O-126
2N4839
TO114 package
2N5860
2N1724A
2N3716
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PDF
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CDP1822CD
Abstract: CDP1822 CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822D CDP1822E CDP1822EX
Text: CDP1822, CDP1822C 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory systems where high speed, low operating current, and simplicity
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CDP1822,
CDP1822C
256-Word
CDP1822
CDP1822C
CDP1822.
CDP1822CD
CDP1822CDX
CDP1822CE
CDP1822CEX
CDP1822D
CDP1822E
CDP1822EX
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PDF
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MWS5101
Abstract: No abstract text available
Text: S MWS5101, MWS5101A S e m ico n d ucto r 7 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Industry Standard Pinout The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and
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MWS5101,
MWS5101A
256-Word
MWS5101
MWS5101A
S5101A
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UPEK
Abstract: tcd50d TCESC4K UPEK TCS4K TCS4K "Fingerprint Sensors" tcd50 TCS4H TCEFC1 fingerprint TCD50D
Text: UPEK Embedded Fingerprint Sensor Solutions Proven technology UPEK’S PROVEN, EASY-TO-INTEGRATE FINGERPRINT SENSORS ARE THE MOST SECURE AND EASIEST TO USE ON THE MARKET. Proven UPEK’s proven silicon fingerprint sensors and solutions have been embedded into millions of devices such as laptops,
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000/year
500/year
UPEK
tcd50d
TCESC4K
UPEK TCS4K
TCS4K
"Fingerprint Sensors"
tcd50
TCS4H
TCEFC1
fingerprint TCD50D
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Q 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2473-01
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MWS5101EL3
Abstract: MWS5101EL2
Text: i!R H A R R IS \MJ MWS5101 M W S 51Û 1A S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Industry Standard Pinout The MWS5101 and MW S5101A are 256 word by 4 bit static random access memories designed for use in memory
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MWS5101
256-Word
MWS5101
S5101A
MWS5101A
MWS5101,
MWS5101A
MWS5101EL3
MWS5101EL2
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PDF
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TL05A
Abstract: No abstract text available
Text: FU JI 2SK2638-01 MR N-channel MOS-FET 450V FAP-IIS Series 10A 50W > Outline Drawing > Features - 0 ,6 5 Q High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated > Applications
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2SK2638-01
TL05A
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PDF
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Untitled
Abstract: No abstract text available
Text: Random-Access Memories RAMs MWS5101 A 3 -A 2 -A -A O -A S -A 6 -A 7 -vss— DI 1 — 001 — 012 — 1 2 3 4 5 6 7 I 6 9 10 II ^ 22 21 20 19 18 17 16 15 14 13 12 — V DD — A4 — R/W — £5T — 0.0. — CS2 — 004 — 014 — 003 — 013
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MWS5101
92CS-29976Rl
256-Word
92CM-30064R2
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EM6420
Abstract: No abstract text available
Text: EM MICROELECTRONIC - MARIN SA EM6420 Ultra Low Power Capacitive Touch Sensor Interface IC Description Availability The EM6420 is an ultra low power Touch Sensor Interface IC able to scan sequentially up to 16 capacitive sensors. The device parameters number of used sensors, sensors
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EM6420
EM6420
MLF32-36-40
6420-DS
4-Jun-12
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IEC104
Abstract: REC580 CP56Time2a REF542 RER581 IEC61850 Full project report on object counter AXP 193 Eberle Relays microscada abb
Text: CAP581 Configuration Tool for COM581 p Operating Instructions 1MRB520184-Uen Edition July 2005 2000 ABB Switzerland Ltd Baden/Switzerland 4th Edition Applies for software version V6.0 We reserve all rights with respect to this document and the software it
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CAP581
COM581
1MRB520184-Uen
CH-5400
IEC104
REC580
CP56Time2a
REF542
RER581
IEC61850
Full project report on object counter
AXP 193
Eberle Relays
microscada abb
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PDF
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MWS5101AEL3
Abstract: MWS5101 MWS5101A MWS5101ADL3 MWS5101AEL2 MWS5101AEL3X MWS5101DL3X MWS5101EL2 MWS5101ELS
Text: MWS5101, MWS5101A TM 256-Word x 4-Bit LSI Static RAM March 1997 Features PDIP, SBDIP TOP VIEW • Industry Standard Pinout A3 1 22 VDD A2 2 21 A4 A1 3 20 R/W A0 4 19 CSI • Memory Retention for Standby. . . . . . . . . . . . . 2V (Min) Battery Voltage A5
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MWS5101,
MWS5101A
256-Word
MWS5101AEL3
MWS5101
MWS5101A
MWS5101ADL3
MWS5101AEL2
MWS5101AEL3X
MWS5101DL3X
MWS5101EL2
MWS5101ELS
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PDF
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CDP1822
Abstract: MWS5101 MWS5101A MWS5101ADL3 MWS5101AEL2 MWS5101AEL3 MWS5101AEL3X MWS5101DL3X MWS5101EL2 MWS5101ELS
Text: MWS5101, MWS5101A S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Industry Standard Pinout The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and
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Original
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MWS5101,
MWS5101A
256-Word
MWS5101
MWS5101A
CDP1822
MWS5101ADL3
MWS5101AEL2
MWS5101AEL3
MWS5101AEL3X
MWS5101DL3X
MWS5101EL2
MWS5101ELS
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PDF
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2N5302 EB
Abstract: 2N1463 2n4271
Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3
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SaD01
2N37S9
2N3790
2N3792
2N4398
2N4399
2N4902
2N4903
2N4904
2N4905
2N5302 EB
2N1463
2n4271
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PDF
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Untitled
Abstract: No abstract text available
Text: q £ SOLID STATE □ ! l> ij 3 a? S 0 fl l □ □ l b b l ' l 1 Random-Access Memories RAMs _ - CDP1822, CDP1822C A3 — 1 A2 — 2 A 1— i 3 A O - 1 4 A5 — 5 A6 — 6 A7 — 7 v ss —
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CDP1822,
CDP1822C
256-Word
Two00
92CS-30Q05RI
CDP1822
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em6420
Abstract: EM6819 sensor map IC 4096 EM-64201 EM MICROELECTRONIC-MARIN EM6819 Capacitive touch waterproof ir touch screen TOUCH SCREEN MCU 110B
Text: EM MICROELECTRONIC - MARIN SA EM6420 Ultra Low Power Capacitive Touch Sensor Interface IC Description Availability Naked die The EM6420 is an ultra low power Touch Sensor Interface IC able to scan sequentially up to 16 capacitive sensors. The device parameters number of used sensors, sensors
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EM6420
EM6420
MLF32-36-40
6420-DS
10-Jun-10
EM6819
sensor map
IC 4096
EM-64201
EM MICROELECTRONIC-MARIN EM6819
Capacitive touch waterproof
ir touch screen
TOUCH SCREEN MCU
110B
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PDF
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Untitled
Abstract: No abstract text available
Text: hennis S CDP1822, CDP1822C S em icon du cto r y 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory sys tems where high speed, low operating current, and simplicity
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OCR Scan
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CDP1822,
CDP1822C
256-Word
CDP1822
CDP1822C
CDP1822.
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PDF
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Untitled
Abstract: No abstract text available
Text: Random-Access Memories RAMs MWS5101A A 3 - ~ -— - A2 A I AO A 5 A 6 i W 2Ï 2 3 4 5 6 — v DD 2 I — A<L 2 0 — R£W 19 — csi 18 — O D 17 CS2 I6 D 04 5 D I4 I4 D03 13 — D I 3 12 — 00 2 A 7 - 7 8 9 D O I - IO D I 2 - I I
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MWS5101A
256-Word
30063RI
MWS5101A.
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PDF
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cdp1822
Abstract: CDP1822CD CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822D CDP1822E CDP1822EX cd18
Text: CDP1822, CDP1822C TM 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory systems where high speed, low operating current, and simplicity
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Original
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CDP1822,
CDP1822C
256-Word
CDP1822
CDP1822C
CDP1822.
CDP1822CD
CDP1822CDX
CDP1822CE
CDP1822CEX
CDP1822D
CDP1822E
CDP1822EX
cd18
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snubber circuts
Abstract: EL2008CT RC snubber ac motor DC MOTOR DRIVE ac volteg w s p 1620 transformer EL2008 EL2008C EL2009 M2008 00043E
Text: 'a n n é e EL2008C 55 MHz 1 A mp Buffer ,4 mplifier U oo <N 00 CRWANCEANALOGINTEGRATEDCIBCU.TS J H Features • H igh slew rate— 2500 V/ju.s • Wide bandwidth— 100 M Hz @ RL = 50fi 55 M H z @ RL = 10il • Output current— 1A continuous • Output impedance— l i l
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EL2008C
EL2008CT
O-220
MDP0028
O-220
M2008
159pF
312T5S
snubber circuts
RC snubber ac motor
DC MOTOR DRIVE ac volteg
w s p 1620 transformer
EL2008
EL2008C
EL2009
M2008
00043E
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PDF
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