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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {¡DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO DE I TCH7E50 0D17CH3 5 | ~ 99D 17093 D'T-4I-5( TLO 2 0 0 GaAsP ORANGE LIG H T EMISSION FEATURES: . ¿20 Large Size tamp Consist of 6 Chips . Low Drive Current, High Intensity Orange Light Emission


    OCR Scan     		PDF TCH7E50 0D17CH3 lFa15 20mA/Chip lFa15mA 15coA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA DISCRETE/OPTO 45E D • TGTTESD 001ÔD02 3 «TOSM TOSHIBA V m Q f l f i SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 'T FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES:


    OCR Scan     		PDF ICEV--50nA e--30V, -50mA, YTS3904 300ns

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA' {DISCRETE/OPTO} 9097250 TOSHIBA ¿ f o iiu h a TO DISCRETE/OPTO DE I TCHTSSO ODlbBET 3 90D SEMICONDUCTOR 16329 DT-33-3^ TOSHIBA CTR MODULE 'MG50M2CK2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF DT-33-3^ MG50M2CK2 Dr-33-3S

    Untitled

    Abstract: No abstract text available
    Text: TIM1213-8L FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH GAIN IM3 = - 4 5 dBc at Po = 28 dBm, G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz Single Carrier Level ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz


    OCR Scan     		PDF TIM1213-8L 2-11C1A) TQT72SQ 23D2fi TCH7E50

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, - Single carrier level • High power - P-|dB = 39 dBm at 6.4 GHz to 7.2 GHz


    OCR Scan     		PDF TIM6472-7L 2-11D1B) TCH7E50 Q0EES54 MW50870196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK2057 Field Effect Transistor Industrial A p p lica tio n s Unit in m m Silicon N Channel MOSType fc-MOS IV High Speed, High Current Switching Applications 15-9MAX ¿32+0.2 Fea tu res • Low Drain-Source ON Resistance ' r DS ON) = 0.24S2 (Typ.)


    OCR Scan     		PDF 2SK2057 15-9MAX 10OjiA