TC7SH86F Search Results

TC7SH86F

Abstract: TC7SH86FU
Contextual Info: TC7SH86F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86F, TC7SH86FU 2-Input EXCLUSIVE OR Gate Features TC7SH86F • High speed operation : tpd = 4.8 ns typ. at VCC = 5V, 15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C

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Abstract: TC7SH86 TC7SH86F TC7SH86FU
Contextual Info: TOSHIBA TC7SH86F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH86F, TC7SH86FU EXCLUSIVE OR GATE The TC7SH86 is an advanced high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: Reliability Tests Report Product Name: TC7SH86FE Package Name: ESV 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

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Abstract: SSOP5 TC7SH86 TC7SH86F TC7SH86FU TC7SH
Contextual Info: TOSHIBA TC7SH86F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH86F, TC7SH86FU EXCLUSIVE OR GATE The TC7SH86 is an advanced high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

TC7SH86FS

Contextual Info: TC7SH86FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86FS EXCLUSIVE OR GATE Features High speed: tpd = 4.8 ns typ. at VCC = 5 V Low power dissipation: ICC = 2 µA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) 5.5V tolerant input.

TC7SH86FE

Contextual Info: TC7SH86FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86FE Exclusive OR Gate Features • Super high speed operation : tPD = 4.8 ns typ. @VCC = 5 V • Low power dissipation : ICC = 2 µA (Max.) @ Ta = 25°C • High noise immunity : VNIH = VNIH

Contextual Info: TC7SH86F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86F, TC7SH86FU 2-Input EXCLUSIVE OR Gate Features TC7SH86F • High speed operation : tpd = 4.8 ns typ. at VCC = 5V, 15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C

Contextual Info: Reliability Tests Report Product Name: TC7SH86FS Package Name: fSV 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

TC7SH86FS

Contextual Info: TC7SH86FS 東芝CMOSデジタル集積回路 シリコン モノリシック TC7SH86FS 2-Input EXCLUSIVE OR Gate 特 長 • 超高速動作 : tpd = 4.8 ns 標準 @ VCC = 5 V, 15pF • 低消費電流 : ICC = 2 A (最大) @ Ta = 25°C : VNIH = VNIL = 28% VCC (最小)

TC7SH86FE

Contextual Info: TC7SH86FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86FE Exclusive OR Gate Features • Super high speed operation : tPD = 4.8 ns typ. @VCC = 5 V • Low power dissipation : ICC = 2 µA (Max.) @ Ta = 25°C • High noise immunity : VNIH = VNIH

Contextual Info: TOSHIBA TC7SH86F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH86F. TC7SH86FU EXCLUSIVE OR GATE The TC7SH86 is an advanced high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

TC7SH86FU

Abstract: TC7SH86F
Contextual Info: TC7SH86F/FU 東芝CMOSデジタル集積回路 シリコン モノリシック TC7SH86F, TC7SH86FU 2-Input EXCLUSIVE OR Gate TC7SH86F 特 長 • 高速動作 • 低消費電流 : ICC = 2 A 最大 @Ta = 25°C • 高雑音余裕度 : VNIH = VNIL = 28% VCC (最小)

TC7SH86FS

Contextual Info: TC7SH86FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86FS 2-Input EXCLUSIVE OR Gate Features • High speed : tpd = 4.8 ns typ. at VCC = 5V, CL=15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C • High noise immunity •

TC7SH86FE

Contextual Info: TC7SH86FE 東芝CMOSデジタル集積回路 シリコン モノリシック TC7SH86FE 2-Input EXCLUSIVE OR Gate 特 長 • 高速動作 : tpd =4.8ns 標準 @ VCC = 5 V, CL = 15pF • 低消費電流 : ICC = 2 A (最大) @ Ta = 25°C • 高雑音余裕度

Contextual Info: TOSHIBA TC7SH86F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH86F, TC7SH86FU EXCLUSIVE OR GATE The TC7SH86 is an advanced high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: S ILIC O N M O N O L IT H IC T O S H IB A C M O S D IG IT A L IN T EG RA T ED CIRCUIT TC7SH86F/FU EXCLUSIVE OR GATE The TC7SH86 is an advanced high speed C M O S EXCLUSIVE OR GATE fabricated with silicon gate C M O S technology. It achieves the high speed operation similar to equivalent

Contextual Info: T O SH IB A TC7SH86F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH86F, TC7SH86FU EXCLUSIVE OR GATE The TC7SH86 is an advanced high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: TC7SH86FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86FE 2-Input EXCLUSIVE OR Gate Features • High speed operation : tpd = 4.8 ns typ. at VCC = 5V, CL=15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C : VNIH = VNIL = 28% VCC (min)

TC7SH86FE

Contextual Info: TC7SH86FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86FE 2-Input EXCLUSIVE OR Gate Features • High speed operation : tpd = 4.8 ns typ. at VCC = 5V, CL=15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C : VNIH = VNIL = 28% VCC (min)

Contextual Info: IC INFORMATION Function Mobile Adapter CMOS Type 1 IN B J 1/1 E GEX-FM903XM/UC TC7SH86FU Model 5 VCC 2 IN A 3 GND 4 OUT Y 2001.8

Contextual Info: Reliability Tests Report Product Name: TC7SH86F Package Name: SMV 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

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Abstract: TC7SH86 TC7SH86F TC7SH86FU
Contextual Info: TO SH IBA TC7SH86F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH86F, TC7SH86FU EXCLUSIVE OR GATE The TC7SH86 is an advanced high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: TC7SH86FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH86FS 2-Input EXCLUSIVE OR Gate Features • High speed : tpd = 4.8 ns typ. at VCC = 5V, CL=15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C • High noise immunity •

specifications of transistor AC126

Abstract: hc132a hc138a specifications of AC126 HC74A TC7PGU04FU transistor AC126 hc273a -toshiba toshiba vhc32 TC4W53FU
Contextual Info: SEMICONDUCTOR GENERAL CATALOG General-Purpose Logic ICs CMOS Logic ICs Low-Voltage CMOS Logic ICs CMOS Logic ICs in Ultra-Small US Packages Dual-Supply Level Shifters CMOS Bus Switch ICs Application-Specific Logic One-Gate CMOS L-MOS 1 2009-8 SCE0004I CMOS Logic ICs (74AC, 74VHC, 74HC and Standard Series) Quick Reference