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    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC59S6416AFT, TC59S6408AFT, TC59S6404AFT 1,048,576 WORDS X 4 BANK X 16 BITS 2,097,152 WORDS X 4 BANK X 8 BITS 4,194,304 WORDS X 4 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S6416FT is a CMOS synchronous dynamic random access memory organized as 1,048,576-words x4-banks x16-bits and


    OCR Scan     		PDF TC59S6416AFT, TC59S6408AFT, TC59S6404AFT TC59S6416FT 576-words x16-bits TC59S6408FTis 152-wordsx4-banks andTC59S1604FTorganized 304-wordsx4-banks