Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TC58N Search Results

    SF Impression Pixel

    TC58N Price and Stock

    KIOXIA TC58NVG0S3HBAI6

    IC FLASH 1GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NVG0S3HBAI6 Tray 338 1
    • 1 $2.38
    • 10 $2.11
    • 100 $1.89525
    • 1000 $1.725
    • 10000 $1.725
    		Buy Now
    Mouser Electronics TC58NVG0S3HBAI6 237
    • 1 $2.38
    • 10 $1.9
    • 100 $1.9
    • 1000 $1.72
    • 10000 $1.72
    		Buy Now

    KIOXIA TC58NYG0S3HBAI6

    IC FLASH 1GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG0S3HBAI6 Tray 256 1
    • 1 $3.08
    • 10 $2.739
    • 100 $2.46
    • 1000 $2.16439
    • 10000 $1.98655
    		Buy Now
    Mouser Electronics TC58NYG0S3HBAI6
    • 1 $3.05
    • 10 $2.46
    • 100 $2.46
    • 1000 $2.46
    • 10000 $2.46
    		Get Quote

    KIOXIA TC58NYG0S3HBAI4

    IC FLASH 1GBIT PARALLEL 63TFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG0S3HBAI4 Tray 210 1
    • 1 $4.09
    • 10 $2.733
    • 100 $4.09
    • 1000 $1.8
    • 10000 $1.8
    		Buy Now
    Mouser Electronics TC58NYG0S3HBAI4
    • 1 $3.14
    • 10 $2.83
    • 100 $2.83
    • 1000 $2.83
    • 10000 $2.83
    		Get Quote

    KIOXIA TC58NVG0S3HBAI4

    IC FLASH 1GBIT PARALLEL 63TFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NVG0S3HBAI4 Tray 190 1
    • 1 $3.18
    • 10 $2.822
    • 100 $2.62725
    • 1000 $2.2776
    • 10000 $2.21791
    		Buy Now
    Mouser Electronics TC58NVG0S3HBAI4
    • 1 $3.14
    • 10 $2.78
    • 100 $2.78
    • 1000 $2.78
    • 10000 $2.78
    		Get Quote

    KIOXIA TC58NYG2S0HBAI6

    IC FLASH 4GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG2S0HBAI6 Tray 170 1
    • 1 $4.63
    • 10 $4.109
    • 100 $3.68988
    • 1000 $3.30312
    • 10000 $3.23416
    		Buy Now
    Mouser Electronics TC58NYG2S0HBAI6 313
    • 1 $3.18
    • 10 $2.97
    • 100 $2.97
    • 1000 $2.86
    • 10000 $2.86
    		Buy Now
    Find more TC58N price and stock on Findchips.com

    TC58N Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58NS100DC Toshiba EEPROM, 1GBit (128M, 8-Bit) CMOS NAND EEPROM Original PDF
    TC58NS100DC Toshiba 1 GBit CMOS NAND EPROM Original PDF
    TC58NS128ADC Toshiba Original PDF
    TC58NS128ADC-T051 Toshiba EEPROM Serial, 128Mbits Density, 3.3V Supply, Tape and Reel Original PDF
    TC58NS128BDC Toshiba 128-MBIT (16M x 8 BITS) CMOS NAND E2PROM (16M BYTE SmartMediaTM) Original PDF
    TC58NS128DC Toshiba Vcc: -0.6 to 46V 0.3W 128Mbit (16M x 8-bits) CMOS NAND E2PROM (16M BYTE smart media) Original PDF
    TC58NS128DC-T051 Toshiba EEPROM Serial, 128Mbits Density, 3.3V Supply, Tape and Reel Original PDF
    TC58NS256ADC Toshiba Original PDF
    TC58NS256ADC-T051 Toshiba EEPROM Serial, 256Mbits Density, 3.3V Supply, Tape and Reel Original PDF
    TC58NS256BDC Toshiba 256-MBIT (32M x 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) Original PDF
    TC58NS256DC Toshiba Original PDF
    TC58NS256DC-T051 Toshiba EEPROM Serial, 256Mbits Density, 3.3V Supply, Tape and Reel Original PDF
    TC58NS512ADC Toshiba 512-MBIT (64M x 8 BITS) CMOS NAND E2PROM (64M BYTE SmartMediaTM) Original PDF
    TC58NS512DC Toshiba Original PDF
    TC58NS512DC-T051 Toshiba EEPROM Serial, 512Mbits Density, 3.3V Supply, Tape and Reel Original PDF
    TC58NVG0S3AFT Toshiba EEPROM, 1GBIT (128M, 8-BitS) CMOS NAND E2PROM Original PDF
    TC58NVG0S3AFT00 Toshiba 1 GBit CMOS NAND EPROM Original PDF
    TC58NVG0S3AFT05 Toshiba 1024 Mbits NAND EEPROM Original PDF
    TC58NVG0S3AFTI Toshiba EEPROM, 1GBIT (128M, 8-BitS) CMOS NAND E2PROM Original PDF
    TC58NVG0S3HBAI4 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 1G PARALLEL 63TFBGA Original PDF

    TC58N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC58NVG1S3ETA00

    Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
    Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2010-01-25C TC58NVG1S3ETA00 TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111

    TC58NYG0S3E

    Abstract: TC58NYG0S3ETA00 TC58NYG0S
    Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S

    tc58nc

    Abstract: tc58nc344 TC58NC353F DIN 50960 TC58NC353 47040 250880 c58nc 05735A00 031C4
    Text: TC58NC353F/354F TC58NC353F/354F High Capacity Flash Disk Controller Chip Set OUTLINE TC58NC353 and TC58NC354 are a controller chip set for the PC Card ATA * and IDE Drive. By using TC58NC353 only, up to 8 NAND flash memories of 128M to 1Gbit can be connected by the unit of 1 (e.g. 1,2,3…7,8). In case of


    Original     		PDF TC58NC353F/354F TC58NC353 TC58NC354 TC58NC353 3920Mbytes tc58nc tc58nc344 TC58NC353F DIN 50960 47040 250880 c58nc 05735A00 031C4

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		PDF TC58NYG1S3HBAI6 TC58NYG1S3HBAI6 2048blocks. 2176-byte 2013-01-18C

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG2S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NVG2S0FTAI0 TC58NVG2S0F 2048blocks. 4320-byte

    TC58NYG1S3EBAI4

    Abstract: P-TFBGA63-0911-0
    Text: TC58NYG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG1S3EBAI4 TC58NYG1S3E 2048blocks. 2112-byte 2012-09-01C TC58NYG1S3EBAI4 P-TFBGA63-0911-0

    Untitled

    Abstract: No abstract text available
    Text: TC58NS512ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia ) DESCRIPTION The TC58NS512A is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable


    Original     		PDF TC58NS512ADC 512-MBIT TC58NS512A 528-byte

    TC58NS128ADC

    Abstract: SmartMediaTM Physical Format Specifications SmartMedia Logical Format ID maker code
    Text: TC58NS128ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M ´ 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128A is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable


    Original     		PDF TC58NS128ADC 128-MBIT TC58NS128A 528-byte 528-byte TC58NS128ADC SmartMediaTM Physical Format Specifications SmartMedia Logical Format ID maker code

    TC58NS256ADC

    Abstract: No abstract text available
    Text: TC58NS256ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M ´ 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256A is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable


    Original     		PDF TC58NS256ADC 256-MBIT TC58NS256A 528-byte 528-byte TC58NS256ADC

    TC58NVG2S3ETA00

    Abstract: TC58NVG2S3E NAND read disturb TC58NVG2S3 tc58nvg2s
    Text: TC58NVG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		PDF TC58NVG2S3ETA00 TC58NVG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3ETA00 NAND read disturb TC58NVG2S3 tc58nvg2s

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HBAI4 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		PDF TC58NVG1S3HBAI4 TC58NVG1S3HBAI4 2048blocks. 2176-byte 2013-01-18C

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HTA00 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		PDF TC58NVG1S3HTA00 TC58NVG1S3HTA00 2048blocks. 2176-byte 2013-01-18C

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HBAI6 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		PDF TC58NVG1S3HBAI6 TC58NVG1S3HBAI6 2048blocks. 2176-byte 2013-01-18C

    TC58NS256BDC

    Abstract: ssfdc
    Text: TC58NS256BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M u 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256B is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable


    Original     		PDF TC58NS256BDC 256-MBIT TC58NS256B 528-byte 528-byte TC58NS256BDC ssfdc

    SmartMediaTM Physical Format Specifications

    Abstract: ssfdc ETC 527 TC58NS128BDC TC58NS256BDC
    Text: TC58NS128BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M u 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128B is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable


    Original     		PDF TC58NS128BDC 128-MBIT TC58NS128B 528-byte 528-byte SmartMediaTM Physical Format Specifications ssfdc ETC 527 TC58NS128BDC TC58NS256BDC

    TC58NVG2S3ETAI0

    Abstract: TC58NVG2S3E TC58NVG2S3
    Text: TC58NVG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		PDF TC58NVG2S3ETAI0 TC58NVG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3ETAI0 TC58NVG2S3

    TC58NVG1S3BTG00

    Abstract: TC58NVG1S3 bad block PSL 26 tc58nvg tc58nvg1 DIN2111 PA15 PA16 NPA16
    Text: TC58NVG1S3BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM Lead-Free DESCRIPTION The TC58NVG1S3B is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048 blocks.


    Original     		PDF TC58NVG1S3BTG00 TC58NVG1S3B 2112-byte 004-08-20A TC58NVG1S3BTG00 TC58NVG1S3 bad block PSL 26 tc58nvg tc58nvg1 DIN2111 PA15 PA16 NPA16

    TC58NVG0S3ETA00

    Abstract: TC58NVG0S3ET tc58nvg0s3eta TC58NVG0S3E TC58NVG DIN2111 PA15 2011-03-01C
    Text: TC58NVG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NVG0S3ETA00 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3ETA00 TC58NVG0S3ET tc58nvg0s3eta TC58NVG DIN2111 PA15 2011-03-01C

    TC58NVG0S3ET

    Abstract: TC58NVG0S3ETAI0 tc58nvg0s3eta tc58nvg0s3e tc58nvg 48-P-1220-0 0x000160
    Text: TC58NVG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NVG0S3ETAI0 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3ET TC58NVG0S3ETAI0 tc58nvg0s3eta tc58nvg 48-P-1220-0 0x000160

    tc58nyg1s3ebai5

    Abstract: TC58NYG1
    Text: TC58NYG1S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG1S3EBAI5 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C tc58nyg1s3ebai5 TC58NYG1

    TC58NVG0S3EBAI4

    Abstract: TC58NVG0S3EBA tc58nvg0s3e tc58nvg0s3eta TC58NVG0S3ETA00 TC58NVG0S3ET
    Text: TC58NVG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NVG0S3EBAI4 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3EBAI4 TC58NVG0S3EBA tc58nvg0s3eta TC58NVG0S3ETA00 TC58NVG0S3ET

    TC58NYG0S3ETAI0

    Abstract: TC58NYG0S
    Text: TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NYG0S3ETAI0 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETAI0 TC58NYG0S

    P-TFBGA63-0813-0

    Abstract: TC58NYM9S3EBAI3
    Text: TC58NYM9S3EBAI3 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.


    Original     		PDF TC58NYM9S3EBAI3 TC58NYM9S3E 512Mbit 128bits) 512blocks. 2112-byte 011-03-01A P-TFBGA63-0813-0 TC58NYM9S3EBAI3

    TC58NYG2S3ETAI0

    Abstract: toshiba NAND ID code
    Text: TC58NYG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		PDF TC58NYG2S3ETAI0 TC58NYG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NYG2S3ETAI0 toshiba NAND ID code