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Catalog Datasheet	MFG & Type	Document Tags	PDF
TC58DVM82F1TGI0 Abstract: No abstract text available Text: TC58DVM82F1TGI0 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 16M x 16BITS CMOS NAND E2PROM DESCRIPTION The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 264 words u 32 pages u 2048 blocks. The device uses single power supply (2.7 V to	Original	TC58DVM82F1TGI0 256-MBIT 16BITS) 264-words 256-words TC58DVM82F1TGI0	PDF

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TC58DVM82F1TGI0

Abstract: No abstract text available
Text: TC58DVM82F1TGI0 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 16M x 16BITS CMOS NAND E2PROM DESCRIPTION The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 264 words u 32 pages u 2048 blocks. The device uses single power supply (2.7 V to

Original

TC58DVM82F1TGI0 256-MBIT 16BITS) 264-words 256-words TC58DVM82F1TGI0

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