tc153
Abstract: No abstract text available
Text: DATA SHEET AAT3783A: 1 A Linear Li-Ion/Polymer Battery Charger with 28 V Over-Voltage Protection Applications Description • Bluetooth headsets, headphones, accessories The AAT3783A BatteryManager is a single-cell Lithium-Ion Li-Ion /Li-Polymer battery charger IC, designed to operate from
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AAT3783A:
AAT3783A
03159A
tc153
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2SC3588
Abstract: 2SA1400-Z 2SC3588-Z
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3588-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SC3588-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage VCEO = 400 V • Complement to 2SA1400-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
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2SC3588-Z
2SC3588-Z
2SA1400-Z
2SC3588
2SA1400-Z
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SA1413-Z
Abstract: 2SC3632-Z
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC3588(Z) how to check
Abstract: 2SA1400-Z 2SC3588-Z
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC3631
Abstract: 2SC3631Z 2SA1412-Z 2SC3631-Z TC1664A
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3631-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SC3631-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage VCEO = 400 V tf < 0.7 s • Complement to 2SA1412-Z
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2SC3631-Z
2SC3631-Z
2SA1412-Z
2SC3631
2SC3631Z
2SA1412-Z
TC1664A
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EVA166
Abstract: siemens microcontroller monitor cable diagram TC166 TA-166 Ertec EVA167 evaluation board 160 pin connector eprom siemens ertec 167 SAB80C166/167
Text: ertec development tools for Siemens microcontroller The ertec evaluation kits enable you to proceed with the Siemens microcontroller family SAB80C16x. The boards provide a hardware environment for code execution and software debugging at a relative low cost. Full
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SAB80C16x.
EVA163
SABC163,
220VAC,
RS232C
ASS16X,
EVA165
SAB80C166/167,
IEEE-695,
TD166
EVA166
siemens microcontroller
monitor cable diagram
TC166
TA-166
Ertec EVA167 evaluation board
160 pin connector
eprom siemens
ertec 167
SAB80C166/167
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2SA1385-Z
Abstract: 2SC3518-Z
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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transistor 2sC3632
Abstract: 2SA1413-Z 2SC3632-Z 2SC3632 tc1665
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SC3632-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage VCEO = 600 V tf < 0.5 s • Complement to 2SA1413-Z 1 2 3
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2SC3632-Z
2SC3632-Z
2SA1413-Z
transistor 2sC3632
2SA1413-Z
2SC3632
tc1665
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2SC3518
Abstract: 2SA1385-Z 2SC3518-Z 2sc3518 transistor
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SC3518-Z is designed for Audio Frequency Amplifier and +0.2 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 5.5 ±0.2 • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP.
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2SC3518-Z
2SC3518-Z
2SA1385-Z
2SC3518
2SA1385-Z
2sc3518 transistor
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SB963-Z
Abstract: 2SD1286-Z TC-1669A tc1669
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MM 1669A
Abstract: tc1669 2SD1286 TC-1669A 2SB963-Z 2SD1286-Z 2SD128 tc1669a
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1286-Z NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SD1286-Z is designed for Switching, especially in Hybrid +0.2 6.5 ±0.2 5.0 ±0.2 5.5 ±0.2 FEATURES • High hFE = 2000 to 30000 • Complement to 2SB963-Z
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2SD1286-Z
2SD1286-Z
2SB963-Z
MM 1669A
tc1669
2SD1286
TC-1669A
2SB963-Z
2SD128
tc1669a
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tc1668
Abstract: 2SD1164 2SD1164-Z
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1164-Z NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SD1164-Z is designed for Low Frequency Amplifier and +0.2 6.5 ±0.2 5.0 ±0.2 4 5.5 ±0.2 • High hFE = 2000 to 30000 1 2 3 Note 5.6 ±0.3 FEATURES
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2SD1164-Z
2SD1164-Z
O-252
tc1668
2SD1164
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2SB768
Abstract: 2SD1033
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SD1033 is designed for Color TV vertical deflection output, +0.2 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 5.5 ±0.2 • High Voltage VCEO = 150 V • Complement to 2SB768
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2SD1033
2SD1033
2SB768
2SB768
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MEL12
Abstract: tc1669 MM 1669A 2sd1286 2SB963-Z 2SD1286-Z TC-1669A
Text: DATA SHEET ,r NEC SILICON TRANSISTOR 2SD1286-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION PACKAGE DIMENSIONS 2 S D 1 2 8 6 -Z is d esig n e d fo r S w itc h in g , es p e cially in H ybrid in m illim eters In te g ra te C ircuits. 6.5±0.2 ^ FEATURES
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2SD1286-Z
2SD1286-Z
2SB963-Z
IEI-1209)
MEL12
tc1669
MM 1669A
2sd1286
2SB963-Z
TC-1669A
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transistor sem 2302
Abstract: No abstract text available
Text: NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION PACKAGE DIMENSIONS 2 SC 3 5 8 8 -Z is design ed for High Voltage Sw itching, especially in in miHimeters H ybrid Integrated Circuits. 2.3±0.2 FEATURES 5.0±0.2 05*0.1 • H igh Voltage V c e o = 400 V
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IEI-1209)
transistor sem 2302
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tc1665
Abstract: TC-1665A transistor mp
Text: SILICON TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2 S C 363 2-Z is des ig n e d fo r High V o ltag e S w itching, especially in PACKAGE DIMENSIONS in m illim eters Hybrid In te g rate d Circuits. FEATURES • H ig h V o lta g e V ceo = 600 V
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2SC3632-Z
fEI-1209)
3632-Z
tc1665
TC-1665A
transistor mp
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2SD103
Abstract: transistor mp IC marking jw
Text: SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 D E S C R IP T IO N 2S D 103 3 is designed fo r C olor T V Vertical D eflection O utput, P A C K A G E D IM E N S IO N S in m illim eters esp ecially in H y b rid In te g rate d Circuits. FEATURES
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2SD1033
2SB768
I-1209}
2SD103
transistor mp
IC marking jw
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B1003
Abstract: TEB-1002 2SD1033 TEB-1014 MEI Semiconductors 2SB768 MEI-1202
Text: DATA SHEET SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SD1033 is designed fo r Color TV Vertical Deflection Output, PACKAGE DIMENSIONS in m illim eters especially in Hybrid Integrated Circuits. FEATURES • High Voltage V ceo = 150 V
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2SD1033
2SD1033
2SB768
IEI-1209)
B1003
TEB-1002
TEB-1014
MEI Semiconductors
2SB768
MEI-1202
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Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SD1286-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 D E S C R IP T IO N PACKAGE D IM E N SIO N S 2SD1286-Z is designed fo r S w itchin g , especially in H ybrid in m illim e te rs Integrate C ircuits. FEATURES • H igh * C om plem ent to 2SB963-Z
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2SD1286-Z
2SD1286-Z
2SB963-Z
IEI-1209)
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